Klaus Schruefer

Person

Baldham, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Silicided semiconductor structure and method of forming the same
- Patent number 9,437,593
- Issue date Sep 6, 2016
- Infineon Technologies AG
- Jiang Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor with local source/drain insulation and asso...
- Patent number 9,240,462
- Issue date Jan 19, 2016
- Infineon Technologies AG
- Juergen Holz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit arrangement comprising a field effect transistor...
- Patent number 9,219,063
- Issue date Dec 22, 2015
- Infineon Technologies AG
- Juergen Holz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including FinFET device
- Patent number 9,012,995
- Issue date Apr 21, 2015
- Infineon Technologies AG
- Ronald Kakoschke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic circuit arrangement
- Patent number 8,952,487
- Issue date Feb 10, 2015
- Infineon Technologies AG
- Hans-Joachim Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicided semiconductor structure and method of forming the same
- Patent number 8,865,592
- Issue date Oct 21, 2014
- Infineon Technologies AG
- Jiang Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit arrangement comprising a field effect transistor...
- Patent number 8,629,500
- Issue date Jan 14, 2014
- Infineon Technologies AG
- Juergen Holz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus of memory array using FinFETs
- Patent number 8,552,475
- Issue date Oct 8, 2013
- Infineon Technologies AG
- Ronald Kakoschke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical diode using silicon formed by selective epitaxial growth
- Patent number 8,318,553
- Issue date Nov 27, 2012
- Infineon Technologies AG
- Christian Russ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and manufacturing method thereof
- Patent number 8,310,027
- Issue date Nov 13, 2012
- Infineon Technologies AG
- Christian Russ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making bipolar FinFET technology
- Patent number 8,183,120
- Issue date May 22, 2012
- Infineon Technologies AG
- Ronald Kakoschke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with a heterostructure
- Patent number 8,106,424
- Issue date Jan 31, 2012
- Infineon Technologies AG
- Klaus Schruefer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus of memory array using FinFETs
- Patent number 8,067,808
- Issue date Nov 29, 2011
- Infineon Technologies AG
- Ronald Kakoschke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus of memory array using finfets
- Patent number 8,039,904
- Issue date Oct 18, 2011
- Infineon Technologies AG
- Ronald Kakoschke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical diode using silicon formed by selective epitaxial growth
- Patent number 7,888,775
- Issue date Feb 15, 2011
- Infineon Technologies AG
- Christian Russ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor with local source/drain insulation and asso...
- Patent number 7,824,993
- Issue date Nov 2, 2010
- Infineon Technologies AG
- Juergen Holz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with a heterostructure
- Patent number 7,804,110
- Issue date Sep 28, 2010
- Infineon Technologies AG
- Klaus Schruefer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus of memory array using FinFETs
- Patent number 7,723,786
- Issue date May 25, 2010
- Ronald Kakoschke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with a heterostructure and associated produ...
- Patent number 7,491,612
- Issue date Feb 17, 2009
- Infineon Technologies AG
- Klaus Schruefer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THERMAL GROUNDING IN BACKSIDE POWER SCHEMES USING CARRIER WAFERS
- Publication number 20240332126
- Publication date Oct 3, 2024
- Intel Corporation
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT VIA AND BURIED OR BACKSIDE POWER RAIL
- Publication number 20230197613
- Publication date Jun 22, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCTION OF FIELD-EFFECT TRANSISTOR WITH LOCAL SOURCE/D...
- Publication number 20160118477
- Publication date Apr 28, 2016
- INFINEON TECHNOLOGIES AG
- Juergen Holz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicided Semiconductor Structure and Method of Forming the Same
- Publication number 20150001638
- Publication date Jan 1, 2015
- INFINEON TECHNOLOGIES AG
- Jiang Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC CIRCUIT ARRANGEMENT
- Publication number 20140167215
- Publication date Jun 19, 2014
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Arrangement Comprising a Field Effect Transistor...
- Publication number 20140124827
- Publication date May 8, 2014
- INFINEON TECHNOLOGIES AG
- Juergen Holz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING FINFET DEVICE
- Publication number 20140077146
- Publication date Mar 20, 2014
- Ronald KAKOSCHKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL DIODE USING SILICON FORMED BY SELECTIVE EPITAXIAL GROWTH
- Publication number 20130009215
- Publication date Jan 10, 2013
- INFINEON TECHNOLOGIES AG
- Christian Russ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS OF MEMORY ARRAY USING FINFETS
- Publication number 20120068149
- Publication date Mar 22, 2012
- Ronald Kakoschke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL DIODE USING SILICON FORMED BY SELECTIVE EPITAXIAL GROWTH
- Publication number 20110095347
- Publication date Apr 28, 2011
- INFINEON TECHNOLOGIES AG
- Christian Russ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH A HETEROSTRUCTURE
- Publication number 20110031530
- Publication date Feb 10, 2011
- Infineon Technologies AG
- Klaus Schruefer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS OF MEMORY ARRAY USING FINFETS
- Publication number 20100252895
- Publication date Oct 7, 2010
- Ronald KAKOSCHKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS OF MEMORY ARRAY USING FINFETS
- Publication number 20100252799
- Publication date Oct 7, 2010
- Ronald KAKOSCHKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicided Semiconductor Structure and Method of Forming the Same
- Publication number 20100193867
- Publication date Aug 5, 2010
- Jiang Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic Device and Manufacturing Method Thereof
- Publication number 20090309167
- Publication date Dec 17, 2009
- Christian Russ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH A HETEROSTRUCTURE AND ASSOCIATED PRODU...
- Publication number 20090121289
- Publication date May 14, 2009
- Infineon Technologies AG
- Klaus Schruefer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Arrangement Comprising a Field Effect Transistor...
- Publication number 20090101975
- Publication date Apr 23, 2009
- INFINEON TECHNOLOGIES AG
- Juergen Holz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL DIODE USING SILICON FORMED BY SELECTIVE EPITAXIAL GROWTH
- Publication number 20090085163
- Publication date Apr 2, 2009
- Christian Russ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Fin Component Arrangement and Method for Manufacturing a Mult...
- Publication number 20080283925
- Publication date Nov 20, 2008
- Joerg Berthold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS OF MEMORY ARRAY USING FINFETS
- Publication number 20080251779
- Publication date Oct 16, 2008
- Infineon Technologies AG
- Ronald Kakoschke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor with a heterostructure and associated produ...
- Publication number 20070013002
- Publication date Jan 18, 2007
- Klaus Schruefer
- H01 - BASIC ELECTRIC ELEMENTS

Klaus Schruefer

Person

Patents Grantslast 30 patents

Silicided semiconductor structure and method of forming the same

Field-effect transistor with local source/drain insulation and asso...

Integrated circuit arrangement comprising a field effect transistor...

Semiconductor device including FinFET device

Electronic circuit arrangement

Silicided semiconductor structure and method of forming the same

Integrated circuit arrangement comprising a field effect transistor...

Apparatus of memory array using FinFETs

Vertical diode using silicon formed by selective epitaxial growth

Electronic device and manufacturing method thereof

Method of making bipolar FinFET technology

Field effect transistor with a heterostructure

Apparatus of memory array using FinFETs

Apparatus of memory array using finfets

Vertical diode using silicon formed by selective epitaxial growth

Field-effect transistor with local source/drain insulation and asso...

Field effect transistor with a heterostructure

Apparatus of memory array using FinFETs

Field effect transistor with a heterostructure and associated produ...

Patents Applicationslast 30 patents

THERMAL GROUNDING IN BACKSIDE POWER SCHEMES USING CARRIER WAFERS

REPLACEMENT VIA AND BURIED OR BACKSIDE POWER RAIL

METHOD OF PRODUCTION OF FIELD-EFFECT TRANSISTOR WITH LOCAL SOURCE/D...

Silicided Semiconductor Structure and Method of Forming the Same

ELECTRONIC CIRCUIT ARRANGEMENT

Integrated Circuit Arrangement Comprising a Field Effect Transistor...

SEMICONDUCTOR DEVICE INCLUDING FINFET DEVICE

VERTICAL DIODE USING SILICON FORMED BY SELECTIVE EPITAXIAL GROWTH

APPARATUS OF MEMORY ARRAY USING FINFETS

VERTICAL DIODE USING SILICON FORMED BY SELECTIVE EPITAXIAL GROWTH

FIELD EFFECT TRANSISTOR WITH A HETEROSTRUCTURE

APPARATUS OF MEMORY ARRAY USING FINFETS

APPARATUS OF MEMORY ARRAY USING FINFETS

Silicided Semiconductor Structure and Method of Forming the Same

Electronic Device and Manufacturing Method Thereof

FIELD EFFECT TRANSISTOR WITH A HETEROSTRUCTURE AND ASSOCIATED PRODU...

Integrated Circuit Arrangement Comprising a Field Effect Transistor...

VERTICAL DIODE USING SILICON FORMED BY SELECTIVE EPITAXIAL GROWTH

Multi-Fin Component Arrangement and Method for Manufacturing a Mult...

APPARATUS OF MEMORY ARRAY USING FINFETS

Field effect transistor with a heterostructure and associated produ...