Ko-Min Chang

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Structures for split gate memory cell scaling with merged control g...
- Patent number 9,620,604
- Issue date Apr 11, 2017
- NXP USA, INC.
- Anirban Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate memory cell with a layer of nanocrystals with improved e...
- Patent number 9,425,055
- Issue date Aug 23, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods and structures for split gate memory cell scaling with merg...
- Patent number 9,318,501
- Issue date Apr 19, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Anirban Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and structures for charge storage isolation in split-gate m...
- Patent number 9,136,360
- Issue date Sep 15, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field focusing features in a ReRAM cell
- Patent number 9,118,008
- Issue date Aug 25, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field focusing features in a ReRAM cell
- Patent number 9,114,980
- Issue date Aug 25, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Feng Zhou
- B82 - NANO-TECHNOLOGY
Information Patent Grant
ReRAM device structure
- Patent number 8,962,385
- Issue date Feb 24, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Cheong M. Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory (RAM) cell and method for forming
- Patent number 8,921,155
- Issue date Dec 30, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ReRAM device structure
- Patent number 8,860,001
- Issue date Oct 14, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate memory device with gap spacer
- Patent number 8,835,295
- Issue date Sep 16, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Jinmiao J. Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field focusing features in a ReRAM cell
- Patent number 8,779,405
- Issue date Jul 15, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a split gate memory cell
- Patent number 8,173,505
- Issue date May 8, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Matthew T. Herrick
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for simulating long-term performance of a non-volatile memor...
- Patent number 7,955,877
- Issue date Jun 7, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Mohammed Suhail
- G11 - INFORMATION STORAGE
Information Patent Grant
Split-gate thin film storage NVM cell with reduced load-up/trap-up...
- Patent number 7,811,886
- Issue date Oct 12, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicided nonvolatile memory and method of making same
- Patent number 7,700,439
- Issue date Apr 20, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Erwin J. Prinz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming an electronic device including discontinuous st...
- Patent number 7,619,275
- Issue date Nov 17, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Michael A. Sadd
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic device including discontinuous storage elements
- Patent number 7,582,929
- Issue date Sep 1, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Michael A. Sadd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making self-aligned split gate memory cell
- Patent number 7,524,719
- Issue date Apr 28, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Robert F. Steimle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device and structure thereof
- Patent number 7,521,317
- Issue date Apr 21, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Chi Nan Brian Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a non-volatile memory and a peripheral device on...
- Patent number 7,341,914
- Issue date Mar 11, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Erwin J. Prinz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-bit non-volatile integrated circuit memory and method therefor
- Patent number 6,939,767
- Issue date Sep 6, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Alexander B. Hoefler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory
- Patent number 6,844,588
- Issue date Jan 18, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Craig A. Cavins
- G11 - INFORMATION STORAGE
Information Patent Grant
Program and erase in a thin film storage non-volatile memory
- Patent number 6,791,883
- Issue date Sep 14, 2004
- FREESCALE SEMICONDUCTOR, INC.
- Craig T. Swift
- G11 - INFORMATION STORAGE
Information Patent Grant
Split-gate memory device and method for accessing the same
- Patent number 5,969,383
- Issue date Oct 19, 1999
- Motorola, Inc.
- Kuo-Tung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static random access memory cell having a thin film transistor (TFT...
- Patent number 5,949,706
- Issue date Sep 7, 1999
- Motorola, Inc.
- Ko-Min Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell having a plural transistor transmission gate and method...
- Patent number 5,898,619
- Issue date Apr 27, 1999
- Ko-Min Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit having a jet vapor deposition silicon nitride fi...
- Patent number 5,731,238
- Issue date Mar 24, 1998
- Motorola Inc.
- Craig Allan Cavins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for operating a memory array
- Patent number 5,706,228
- Issue date Jan 6, 1998
- Motorola, Inc.
- Kuo-Tung Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Process for forming an electrically programmable read-only memory cell
- Patent number 5,705,415
- Issue date Jan 6, 1998
- Motorola, Inc.
- Marius K. Orlowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making an EEPROM cell with isolation transistor
- Patent number 5,646,060
- Issue date Jul 8, 1997
- Motorola, Inc.
- Ko-Min Chang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS AND STRUCTURES FOR SPLIT GATE MEMORY CELL SCALING WITH MERG...
- Publication number 20160155813
- Publication date Jun 2, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Anirban Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURES FOR SPLIT GATE MEMORY CELL SCALING WITH MERG...
- Publication number 20150364478
- Publication date Dec 17, 2015
- Anirban ROY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE MEMORY CELL WITH IMPROVED ERASE PERFORMANCE
- Publication number 20150349142
- Publication date Dec 3, 2015
- BRIAN A. WINSTEAD
- G11 - INFORMATION STORAGE
Information Patent Application
RERAM DEVICE STRUCTURE
- Publication number 20150004747
- Publication date Jan 1, 2015
- CHEONG M. HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD FOCUSING FEATURES IN A RERAM CELL
- Publication number 20140295639
- Publication date Oct 2, 2014
- FREESCALE SEMICONDUCTOR, INC.
- FENG ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE MEMORY DEVICE WITH GAP SPACER
- Publication number 20130323922
- Publication date Dec 5, 2013
- FREESCALE SEMICONDUCTOR, INC.
- JINMIAO J. SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD FOCUSING FEATURES IN A RERAM CELL
- Publication number 20130320285
- Publication date Dec 5, 2013
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD FOCUSING FEATURES IN A RERAM CELL
- Publication number 20130320284
- Publication date Dec 5, 2013
- Feng Zhou
- B82 - NANO-TECHNOLOGY
Information Patent Application
RERAM DEVICE STRUCTURE
- Publication number 20130264533
- Publication date Oct 10, 2013
- CHEONG Min HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE MEMORY DEVICE WITH GAP SPACER
- Publication number 20130084697
- Publication date Apr 4, 2013
- GLOBAL FOUNDRIES SINGAPORE PTE LTD.
- Jinmiao J. Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY (RAM) CELL AND METHOD FOR FORMING
- Publication number 20120261635
- Publication date Oct 18, 2012
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY (RAM) CELL AND METHOD FOR FORMING
- Publication number 20120261636
- Publication date Oct 18, 2012
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROVIDING A NON-VOLATILE MEMORY
- Publication number 20100240156
- Publication date Sep 23, 2010
- Mohammed Suhail
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MAKING A SPLIT GATE MEMORY CELL
- Publication number 20100099246
- Publication date Apr 22, 2010
- Matthew T. herrick
- B82 - NANO-TECHNOLOGY
Information Patent Application
Split-gate thin film storage NVM cell with reduced load-up/trap-up...
- Publication number 20080188052
- Publication date Aug 7, 2008
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SPLIT GATE MEMORY CELL AND METHOD OF MAKING
- Publication number 20080121974
- Publication date May 29, 2008
- Robert F. Steimle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a non-volatile memory and a peripheral device on...
- Publication number 20070218631
- Publication date Sep 20, 2007
- Erwin J. Prinz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a semiconductor device and structure thereof
- Publication number 20070218669
- Publication date Sep 20, 2007
- Chi Nan Brian Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicided nonvolatile memory and method of making same
- Publication number 20070218633
- Publication date Sep 20, 2007
- Erwin J. Prinz
- B82 - NANO-TECHNOLOGY
Information Patent Application
Electronic device including discontinuous storage elements
- Publication number 20070018222
- Publication date Jan 25, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Michael A. Sadd
- B82 - NANO-TECHNOLOGY
Information Patent Application
Process for forming an electronic device including discontinuous st...
- Publication number 20070020856
- Publication date Jan 25, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Michael A. Sadd
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-bit non-volatile integrated circuit memory and method therefor
- Publication number 20050106812
- Publication date May 19, 2005
- Alexander B. Hoefler
- B82 - NANO-TECHNOLOGY
Information Patent Application
Program and erase in a thin film storage non-volatile memory
- Publication number 20030235083
- Publication date Dec 25, 2003
- Craig T. Swift
- G11 - INFORMATION STORAGE
Information Patent Application
Non-volatile memory and method of forming thereof
- Publication number 20030111672
- Publication date Jun 19, 2003
- Craig A. Cavins
- G11 - INFORMATION STORAGE

Ko-Min Chang

Person

Patents Grantslast 30 patents

Structures for split gate memory cell scaling with merged control g...

Split gate memory cell with a layer of nanocrystals with improved e...

Methods and structures for split gate memory cell scaling with merg...

Methods and structures for charge storage isolation in split-gate m...

Field focusing features in a ReRAM cell

Field focusing features in a ReRAM cell

ReRAM device structure

Resistive random access memory (RAM) cell and method for forming

ReRAM device structure

Split gate memory device with gap spacer

Field focusing features in a ReRAM cell

Method of making a split gate memory cell

Method for simulating long-term performance of a non-volatile memor...

Split-gate thin film storage NVM cell with reduced load-up/trap-up...

Silicided nonvolatile memory and method of making same

Process for forming an electronic device including discontinuous st...

Electronic device including discontinuous storage elements

Method of making self-aligned split gate memory cell

Method of forming a semiconductor device and structure thereof

Method for forming a non-volatile memory and a peripheral device on...

Multi-bit non-volatile integrated circuit memory and method therefor

Non-volatile memory

Program and erase in a thin film storage non-volatile memory

Split-gate memory device and method for accessing the same

Static random access memory cell having a thin film transistor (TFT...

Memory cell having a plural transistor transmission gate and method...

Integrated circuit having a jet vapor deposition silicon nitride fi...

Method for operating a memory array

Process for forming an electrically programmable read-only memory cell

Method for making an EEPROM cell with isolation transistor

Patents Applicationslast 30 patents

METHODS AND STRUCTURES FOR SPLIT GATE MEMORY CELL SCALING WITH MERG...

METHODS AND STRUCTURES FOR SPLIT GATE MEMORY CELL SCALING WITH MERG...

SPLIT GATE MEMORY CELL WITH IMPROVED ERASE PERFORMANCE

RERAM DEVICE STRUCTURE

FIELD FOCUSING FEATURES IN A RERAM CELL

SPLIT GATE MEMORY DEVICE WITH GAP SPACER

FIELD FOCUSING FEATURES IN A RERAM CELL

FIELD FOCUSING FEATURES IN A RERAM CELL

RERAM DEVICE STRUCTURE

SPLIT GATE MEMORY DEVICE WITH GAP SPACER

RESISTIVE RANDOM ACCESS MEMORY (RAM) CELL AND METHOD FOR FORMING

RESISTIVE RANDOM ACCESS MEMORY (RAM) CELL AND METHOD FOR FORMING

METHOD FOR PROVIDING A NON-VOLATILE MEMORY

METHOD OF MAKING A SPLIT GATE MEMORY CELL

Split-gate thin film storage NVM cell with reduced load-up/trap-up...

SELF-ALIGNED SPLIT GATE MEMORY CELL AND METHOD OF MAKING

Method for forming a non-volatile memory and a peripheral device on...

Method of forming a semiconductor device and structure thereof

Silicided nonvolatile memory and method of making same

Electronic device including discontinuous storage elements

Process for forming an electronic device including discontinuous st...

Multi-bit non-volatile integrated circuit memory and method therefor

Program and erase in a thin film storage non-volatile memory

Non-volatile memory and method of forming thereof