Koh Yee Wee

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Johor, MY

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Patents Grantslast 30 patents

Information Patent Grant
Composite barrier/etch stop layer comprising oxygen doped SiC and S...
- Patent number 7,538,353
- Issue date May 26, 2009
- Chartered Semiconductor Manufacturing Ltd.
- Liu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen doped SiC for Cu barrier and etch stop layer in dual damasce...
- Patent number 7,052,932
- Issue date May 30, 2006
- Chartered Semiconductor Manufacturing Ltd.
- Liu Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Oxygen doped SiC for Cu barrier and etch stop layer in dual damasce...
- Publication number 20060202343
- Publication date Sep 14, 2006
- Chartered Semiconductor Manufacturing Ltd.
- Liu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxygen doped SiC for Cu barrier and etch stop layer in dual damasce...
- Publication number 20050184295
- Publication date Aug 25, 2005
- Chartered Semiconductor Manufacturing Ltd.
- Liu Huang
- H01 - BASIC ELECTRIC ELEMENTS