Koichi Ando

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 11,171,086
- Issue date Nov 9, 2021
- Renesas Electronics Corporation
- Shunji Kubo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor memory having suitable crystal orientation
- Patent number 7,773,428
- Issue date Aug 10, 2010
- NEC Electronics Corporation
- Koichi Ando
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile semiconductor memory device
- Patent number 7,071,512
- Issue date Jul 4, 2006
- NEC Electronics Corporation
- Kenichiro Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-performance MOS transistor of LDD structure having a gate insu...
- Patent number 6,794,258
- Issue date Sep 21, 2004
- NEC Electronics Corporation
- Mariko Makabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-performance MOS transistor of LDD structure having a gate insu...
- Patent number 6,614,081
- Issue date Sep 2, 2003
- NEC Electronics Corporation
- Mariko Makabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus including CMOS circuits and method for fabr...
- Patent number 6,603,179
- Issue date Aug 5, 2003
- NEC Electronics Corporation
- Koichi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate insulating layers different in thi...
- Patent number 6,475,862
- Issue date Nov 5, 2002
- NEC Corporation
- Koichi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating oxide film
- Patent number 6,258,731
- Issue date Jul 10, 2001
- NEC Corporation
- Koichi Ando
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process of fabricating semiconductor device having capacitor electr...
- Patent number 5,691,220
- Issue date Nov 25, 1997
- NEC Corporation
- Sadayuki Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,492,854
- Issue date Feb 20, 1996
- NEC Corporation
- Koichi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor dynamic random access memory cell free from leakage b...
- Patent number 5,438,541
- Issue date Aug 1, 1995
- NEC Corporation
- Koichi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with capacitor insulating film and method for...
- Patent number 5,349,494
- Issue date Sep 20, 1994
- NEC Corporation
- Koichi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic circuit with bipolar CMOS configuration
- Patent number 5,182,472
- Issue date Jan 26, 1993
- NEC Corporation
- Koichi Ando
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240063059
- Publication date Feb 22, 2024
- RENESAS ELECTRONICS CORPORATION
- Koichi ANDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210167012
- Publication date Jun 3, 2021
- RENESAS ELECTRONICS CORPORATION
- Shunji KUBO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nonvolatile semiconductor memory having suitable crystal orientation
- Publication number 20080144394
- Publication date Jun 19, 2008
- NEC Electronics Corporation
- Koichi Ando
- G11 - INFORMATION STORAGE
Information Patent Application
Non-volatile semiconductor memory device
- Publication number 20050230743
- Publication date Oct 20, 2005
- NEC Electronics Corporation
- Kenichiro Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-performance MOS transistor of LDD structure having a gate insu...
- Publication number 20040026752
- Publication date Feb 12, 2004
- NEC Electronics Corporation
- Mariko Makabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor appratus including CMOS circuits and method for fabri...
- Publication number 20020063295
- Publication date May 30, 2002
- NEC Corporation
- Koichi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-performance MOS transistor of LDD structure and manufacturing...
- Publication number 20010028086
- Publication date Oct 11, 2001
- Mariko Makabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor device
- Publication number 20010016388
- Publication date Aug 23, 2001
- Shin Koyama
- H01 - BASIC ELECTRIC ELEMENTS

Koichi Ando

Person

Patents Grantslast 30 patents

Semiconductor device

Nonvolatile semiconductor memory having suitable crystal orientation

Non-volatile semiconductor memory device

High-performance MOS transistor of LDD structure having a gate insu...

High-performance MOS transistor of LDD structure having a gate insu...

Semiconductor apparatus including CMOS circuits and method for fabr...

Semiconductor device having gate insulating layers different in thi...

Method for fabricating oxide film

Process of fabricating semiconductor device having capacitor electr...

Method of manufacturing semiconductor device

Semiconductor dynamic random access memory cell free from leakage b...

Semiconductor device with capacitor insulating film and method for...

Logic circuit with bipolar CMOS configuration

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

Nonvolatile semiconductor memory having suitable crystal orientation

Non-volatile semiconductor memory device

High-performance MOS transistor of LDD structure having a gate insu...

Semiconductor appratus including CMOS circuits and method for fabri...

High-performance MOS transistor of LDD structure and manufacturing...

Method for fabricating semiconductor device