Koichi Mizuno

Person

Nara, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Ballistic semiconductor device
- Patent number 7,414,261
- Issue date Aug 19, 2008
- Matsushita Electric Industrial Co., Ltd.
- Nobuyuki Otsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,323,725
- Issue date Jan 29, 2008
- Matsushita Electric Industrial Co., Ltd.
- Shigeo Yoshii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching device
- Patent number 6,967,517
- Issue date Nov 22, 2005
- Matsushita Electric Industrial Co., Ltd.
- Koichi Mizuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma oscillation switching device
- Patent number 6,953,954
- Issue date Oct 11, 2005
- Matsushita Electric Industrial Co., Ltd.
- Shigeo Yoshii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium indium nitride arsenide based epitaxial wafer, a hetero fie...
- Patent number 6,861,679
- Issue date Mar 1, 2005
- Matsushita Electric Industrial Co., Ltd.
- Nobuyuki Otsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-frequency circuit element having a superconductive resonator w...
- Patent number 6,360,111
- Issue date Mar 19, 2002
- Matsushita Electric Industrial Co., Ltd.
- Koichi Mizuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-frequency circuit element having a superconductive resonator t...
- Patent number 6,360,112
- Issue date Mar 19, 2002
- Matsushita Electric Industrial Co., Ltd.
- Koichi Mizuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-frequency circuit element in which a resonator and input/ouput...
- Patent number 6,016,434
- Issue date Jan 18, 2000
- Matsushita Electric Industrial Co., Ltd.
- Koichi Mizuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect type superconducting device including bi-base oxide co...
- Patent number 5,828,079
- Issue date Oct 27, 1998
- Matsushita Electric Industrial Co., Ltd.
- Koichi Mizuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High frequency system including a superconductive device and temper...
- Patent number 5,757,243
- Issue date May 26, 1998
- Matsushita Electric Industrial Co., Ltd.
- Koichi Mizuno
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Bi-Sr-Ca-Cu-O superconductor junction through a Bi-Sr-Cu-O barrier...
- Patent number 5,480,859
- Issue date Jan 2, 1996
- Matsushita Electric Industrial Co., Ltd.
- Koichi Mizuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superconducting weak-link bridge
- Patent number 5,481,119
- Issue date Jan 2, 1996
- Matsushita Electric Industrial Co., Ltd.
- Hidetaka Higashino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming Hg-containing oxide superconducting films
- Patent number 5,462,921
- Issue date Oct 31, 1995
- Matsushita Electric Industrial Co., Ltd.
- Hideaki Adachi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film high Tc superconductor comprising a ferroelectric buffer...
- Patent number 5,434,126
- Issue date Jul 18, 1995
- Matsushita Electric Industrial Co., Ltd.
- Yo Ichikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Josephson devices and process for manufacturing the same
- Patent number 5,047,390
- Issue date Sep 10, 1991
- Matsushita Electric Industrial Co., Ltd.
- Hidetaka Higashino
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VARIABLE ATTENUATOR, HIGH FREQUENCY INTEGRATED CIRCUIT AND COMMUNIC...
- Publication number 20070096843
- Publication date May 3, 2007
- Matsushita Electric Industrial Co., Ltd.
- Koichi Mizuno
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
Ballistic semiconductor device
- Publication number 20060231862
- Publication date Oct 19, 2006
- Nobuyuki Otsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Two-system PLL frequency synthesizer
- Publication number 20060192621
- Publication date Aug 31, 2006
- Tomoaki Maeda
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor device and fabrication method thereof
- Publication number 20050067615
- Publication date Mar 31, 2005
- Matsushita Electric Industrial Co., Ltd.
- Shigeo Yoshii
- B82 - NANO-TECHNOLOGY
Information Patent Application
Gallium indium nitride arsenide based epitaxial wafer, a hetero fie...
- Publication number 20040188708
- Publication date Sep 30, 2004
- Matsushita Electric Industrial Co., Ltd.
- Nobuyuki Otsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Switching device
- Publication number 20040183583
- Publication date Sep 23, 2004
- Matsushita Electric Industrial Co., Ltd.
- Koichi Mizuno
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Plasma oscillation switching device
- Publication number 20040135169
- Publication date Jul 15, 2004
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Shigeo Yoshii
- H01 - BASIC ELECTRIC ELEMENTS

Koichi Mizuno

Person

Patents Grantslast 30 patents

Ballistic semiconductor device

Semiconductor device

Switching device

Plasma oscillation switching device

Gallium indium nitride arsenide based epitaxial wafer, a hetero fie...

High-frequency circuit element having a superconductive resonator w...

High-frequency circuit element having a superconductive resonator t...

High-frequency circuit element in which a resonator and input/ouput...

Field-effect type superconducting device including bi-base oxide co...

High frequency system including a superconductive device and temper...

Bi-Sr-Ca-Cu-O superconductor junction through a Bi-Sr-Cu-O barrier...

Superconducting weak-link bridge

Method of forming Hg-containing oxide superconducting films

Thin-film high Tc superconductor comprising a ferroelectric buffer...

Josephson devices and process for manufacturing the same

Patents Applicationslast 30 patents

VARIABLE ATTENUATOR, HIGH FREQUENCY INTEGRATED CIRCUIT AND COMMUNIC...

Ballistic semiconductor device

Two-system PLL frequency synthesizer

Semiconductor device and fabrication method thereof

Gallium indium nitride arsenide based epitaxial wafer, a hetero fie...

Switching device

Plasma oscillation switching device