Koichiro Inomata

Person

Yokohamashi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive element and magnetic memory device
- Patent number 7,593,193
- Issue date Sep 22, 2009
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory device
- Patent number 7,345,852
- Issue date Mar 18, 2008
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory device
- Patent number 7,038,894
- Issue date May 2, 2006
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory device
- Patent number 6,987,653
- Issue date Jan 17, 2006
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory with reduced write current
- Patent number 6,868,002
- Issue date Mar 15, 2005
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory having antiferromagnetically coupled recording layer
- Patent number 6,751,074
- Issue date Jun 15, 2004
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory with reduced write current
- Patent number 6,707,711
- Issue date Mar 16, 2004
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory device
- Patent number 6,611,405
- Issue date Aug 26, 2003
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory with reduced write current
- Patent number 6,556,473
- Issue date Apr 29, 2003
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device
- Patent number 6,473,336
- Issue date Oct 29, 2002
- Kabushiki Kaisha Toshiba
- Kentaro Nakajima
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic element, magnetic read head, magnetic storage device, magn...
- Patent number 6,381,171
- Issue date Apr 30, 2002
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic element, magnetic memory device, magnetoresistance effect...
- Patent number 6,365,286
- Issue date Apr 2, 2002
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor element having charge accumulating layer under gate e...
- Patent number 6,208,000
- Issue date Mar 27, 2001
- Kabushiki Kaisha Toshiba
- Tetsufumi Tanamoto
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic element, and magnetic head and magnetic memory device usin...
- Patent number 6,114,056
- Issue date Sep 5, 2000
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin dependent conduction device
- Patent number 6,069,820
- Issue date May 30, 2000
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic device and magnetic sensor using the same
- Patent number 5,973,334
- Issue date Oct 26, 1999
- Kabushiki Kaisha Toshiba
- Koichi Mizushima
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance effect element
- Patent number 5,773,156
- Issue date Jun 30, 1998
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic device and magnetic sensor using the same
- Patent number 5,747,859
- Issue date May 5, 1998
- Kabushiki Kaisha Toshiba
- Koichi Mizushima
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Photo-inducible magnetic exchange coupling device
- Patent number 5,723,978
- Issue date Mar 3, 1998
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance effect element
- Patent number 5,716,719
- Issue date Feb 10, 1998
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance effect element
- Patent number 5,700,588
- Issue date Dec 23, 1997
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Artificial multilayer and method of manufacturing the same
- Patent number 5,616,370
- Issue date Apr 1, 1997
- Kabushiki Kaisha Toshiba
- Shiho Okuno
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Oxide film with preferred crystal orientation, method of manufactur...
- Patent number 5,607,781
- Issue date Mar 4, 1997
- Kabushiki Kaisha Toshiba
- Shiho Okuno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Magnetoresistance effect element
- Patent number 5,585,196
- Issue date Dec 17, 1996
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance effect element
- Patent number 5,578,385
- Issue date Nov 26, 1996
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Artificial multilayer and method of manufacturing the same
- Patent number 5,534,355
- Issue date Jul 9, 1996
- Kabushiki Kaisha Toshiba
- Shiho Okuno
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance effect element
- Patent number 5,523,172
- Issue date Jun 4, 1996
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance effect element
- Patent number 5,500,633
- Issue date Mar 19, 1996
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element
- Patent number 5,365,212
- Issue date Nov 15, 1994
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element and magnetoresistance effect sensor
- Patent number 5,304,975
- Issue date Apr 19, 1994
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY DEVICE
- Publication number 20070297101
- Publication date Dec 27, 2007
- Koichiro Inomata
- G01 - MEASURING TESTING
Information Patent Application
Magnetoresistive element and magnetic memory device
- Publication number 20060146451
- Publication date Jul 6, 2006
- KABUSHI KAISHA TOSHIBA
- Koichiro Inomata
- G01 - MEASURING TESTING
Information Patent Application
Magnetoresistive element and magnetic memory device
- Publication number 20050185347
- Publication date Aug 25, 2005
- KABUSHI KAISHA TOSHIBA
- Koichiro Inomata
- G01 - MEASURING TESTING
Information Patent Application
Magnetoresistive element and magnetic memory device
- Publication number 20040175596
- Publication date Sep 9, 2004
- KABUSHIKI KAISHA TOSHIBA
- Koichiro Inomata
- G01 - MEASURING TESTING
Information Patent Application
Magnetic memory
- Publication number 20040156231
- Publication date Aug 12, 2004
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive element and magnetic memory device
- Publication number 20030197984
- Publication date Oct 23, 2003
- KABUSHIKI KAISHA TOSHIBA
- Koichiro Inomata
- G01 - MEASURING TESTING
Information Patent Application
Magnetic memory
- Publication number 20030137870
- Publication date Jul 24, 2003
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic memory
- Publication number 20020034094
- Publication date Mar 21, 2002
- Yoshiaki Saito
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic memory device
- Publication number 20020006058
- Publication date Jan 17, 2002
- Kentaro Nakajima
- H01 - BASIC ELECTRIC ELEMENTS

Koichiro Inomata

Person

Patents Grantslast 30 patents

Magnetoresistive element and magnetic memory device

Magnetoresistive element and magnetic memory device

Magnetoresistive element and magnetic memory device

Magnetoresistive element and magnetic memory device

Magnetic memory with reduced write current

Magnetic memory having antiferromagnetically coupled recording layer

Magnetic memory with reduced write current

Magnetoresistive element and magnetic memory device

Magnetic memory with reduced write current

Magnetic memory device

Magnetic element, magnetic read head, magnetic storage device, magn...

Magnetic element, magnetic memory device, magnetoresistance effect...

Semiconductor element having charge accumulating layer under gate e...

Magnetic element, and magnetic head and magnetic memory device usin...

Spin dependent conduction device

Magnetic device and magnetic sensor using the same

Magnetoresistance effect element

Magnetic device and magnetic sensor using the same

Photo-inducible magnetic exchange coupling device

Magnetoresistance effect element

Magnetoresistance effect element

Artificial multilayer and method of manufacturing the same

Oxide film with preferred crystal orientation, method of manufactur...

Magnetoresistance effect element

Magnetoresistance effect element

Artificial multilayer and method of manufacturing the same

Magnetoresistance effect element

Magnetoresistance effect element

Magnetoresistance effect element

Magnetoresistance effect element and magnetoresistance effect sensor

Patents Applicationslast 30 patents

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY DEVICE

Magnetoresistive element and magnetic memory device

Magnetoresistive element and magnetic memory device

Magnetoresistive element and magnetic memory device

Magnetic memory

Magnetoresistive element and magnetic memory device

Magnetic memory

Magnetic memory

Magnetic memory device