Koji Ashida

Person

Sanda-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Temperature distribution evaluation method, temperature distributio...
- Patent number 12,131,960
- Issue date Oct 29, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor substrate, method for manufacturing same, and dev...
- Patent number 12,020,928
- Issue date Jun 25, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vapour-phase epitaxial growth method, and method for producing subs...
- Patent number 11,359,307
- Issue date Jun 14, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Reference sample with inclined support base, method for evaluating...
- Patent number 10,847,342
- Issue date Nov 24, 2020
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- G01 - MEASURING TESTING
Information Patent Grant
Reference sample with inclined support base, method for evaluating...
- Patent number 10,699,873
- Issue date Jun 30, 2020
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface treatment method for SiC substrate
- Patent number 10,665,465
- Issue date May 26, 2020
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor wafer
- Patent number 10,508,361
- Issue date Dec 17, 2019
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Etching method for SiC substrate and holding container
- Patent number 10,388,536
- Issue date Aug 20, 2019
- Toyo Tanso Co., Ltd.
- Satoshi Torimi
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF USING SIC CONTAINER
- Publication number 20240044042
- Publication date Feb 8, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING DEVICE FOR SIC SEMICONDUCTOR SUBSTRATE
- Publication number 20220259760
- Publication date Aug 18, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
CONTAINER MADE OF SIC
- Publication number 20220259759
- Publication date Aug 18, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
TEMPERATURE DISTRIBUTION EVALUATION METHOD, TEMPERATURE DISTRIBUTIO...
- Publication number 20220216116
- Publication date Jul 7, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SEMICONDUCTOR SUBSTRATE, AND, PRODUCTION METHOD THEREFOR AND PR...
- Publication number 20210399095
- Publication date Dec 23, 2021
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND DEV...
- Publication number 20210398807
- Publication date Dec 23, 2021
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
REFERENCE SAMPLE WITH INCLINED SUPPORT BASE, METHOD FOR EVALUATING...
- Publication number 20200279716
- Publication date Sep 3, 2020
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REFERENCE SAMPLE WITH INCLINED SUPPORT BASE, METHOD FOR EVALUATING...
- Publication number 20190148107
- Publication date May 16, 2019
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VAPOUR-PHASE EPITAXIAL GROWTH METHOD, AND METHOD FOR PRODUCING SUBS...
- Publication number 20190136409
- Publication date May 9, 2019
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER
- Publication number 20180312992
- Publication date Nov 1, 2018
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
SURFACE TREATMENT METHOD FOR SiC SUBSTRATE
- Publication number 20170345672
- Publication date Nov 30, 2017
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
ETCHING METHOD FOR SIC SUBSTRATE AND HOLDING CONTAINER
- Publication number 20170323797
- Publication date Nov 9, 2017
- TOYO TANSO CO., LTD
- Satoshi Torimi
- H01 - BASIC ELECTRIC ELEMENTS

Koji Ashida

Person

Patents Grantslast 30 patents

Temperature distribution evaluation method, temperature distributio...

SiC semiconductor substrate, method for manufacturing same, and dev...

Vapour-phase epitaxial growth method, and method for producing subs...

Reference sample with inclined support base, method for evaluating...

Reference sample with inclined support base, method for evaluating...

Surface treatment method for SiC substrate

Method for manufacturing semiconductor wafer

Etching method for SiC substrate and holding container

Patents Applicationslast 30 patents

METHOD OF USING SIC CONTAINER

MANUFACTURING DEVICE FOR SIC SEMICONDUCTOR SUBSTRATE

CONTAINER MADE OF SIC

TEMPERATURE DISTRIBUTION EVALUATION METHOD, TEMPERATURE DISTRIBUTIO...

SIC SEMICONDUCTOR SUBSTRATE, AND, PRODUCTION METHOD THEREFOR AND PR...

SIC SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND DEV...

REFERENCE SAMPLE WITH INCLINED SUPPORT BASE, METHOD FOR EVALUATING...

REFERENCE SAMPLE WITH INCLINED SUPPORT BASE, METHOD FOR EVALUATING...

VAPOUR-PHASE EPITAXIAL GROWTH METHOD, AND METHOD FOR PRODUCING SUBS...

METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER

SURFACE TREATMENT METHOD FOR SiC SUBSTRATE

ETCHING METHOD FOR SIC SUBSTRATE AND HOLDING CONTAINER