Koji Hataya

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Porous silicon particles and complex porous silicon particles, and...
- Patent number 8,980,428
- Issue date Mar 17, 2015
- Furukawa Electric Co., Ltd.
- Hirokazu Yoshida
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device
- Patent number 7,859,014
- Issue date Dec 28, 2010
- NEC Corporation
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic electrode structure of nitride semiconductor device
- Patent number 7,459,788
- Issue date Dec 2, 2008
- NEC Corporation
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NEGATIVE ELECTRODE FOR NONAQUEOUS ELECTROLYTE RECHARGEABLE BATTERY...
- Publication number 20150132646
- Publication date May 14, 2015
- FURUKAWA ELECTRIC CO.,LTD.
- Hideo NISHIKUBO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POROUS SILICON PARTICLES AND COMPLEX POROUS SILICON PARTICLES, AND...
- Publication number 20130196158
- Publication date Aug 1, 2013
- FURUKAWA ELECTRIC CO., LTD.
- Hirokazu YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky Electrode of Nitride Semiconductor Device and Process for...
- Publication number 20080006853
- Publication date Jan 10, 2008
- NEC Corporation
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ohmic electrode structure of nitride semiconductor device
- Publication number 20070164305
- Publication date Jul 19, 2007
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20070158692
- Publication date Jul 12, 2007
- NEC Corporation
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Solid electrolyte and battery using the same
- Publication number 20020187402
- Publication date Dec 12, 2002
- Koji Hataya
- H01 - BASIC ELECTRIC ELEMENTS