Koji Nakayama

Person

Osaka-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide semiconductor device and a method of manufacturing...
- Patent number 10,868,122
- Issue date Dec 15, 2020
- Fuji Electric Co., Ltd.
- Takeshi Tawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure, semiconductor device, and method for produ...
- Patent number 9,496,345
- Issue date Nov 15, 2016
- National Institute of Advanced Industrial Science and Technology
- Kazutoshi Kojima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for recovering an on-state forward voltage and, shrinking st...
- Patent number 8,455,269
- Issue date Jun 4, 2013
- Central Research Institute of Electric Power Industry
- Toshiyuki Miyanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing silicon carbide semiconductor device
- Patent number 8,367,510
- Issue date Feb 5, 2013
- Central Research Institute Of Electric Power Industry
- Toshiyuki Miyanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar semiconductor device, method for producing the same, and me...
- Patent number 8,178,949
- Issue date May 15, 2012
- The Kansai Electric Power Co., Inc.
- Ryosuke Ishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide bipolar semiconductor device
- Patent number 8,154,026
- Issue date Apr 10, 2012
- Central Research Institute Of Electric Power Industry
- Ryosuke Ishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide Zener diode
- Patent number 8,093,599
- Issue date Jan 10, 2012
- Central Research Institute Of Electric Power Industry
- Ryosuke Ishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method therefor
- Patent number 7,960,257
- Issue date Jun 14, 2011
- The Kansai Electric Power Co., Inc.
- Koji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method therefor
- Patent number 7,960,737
- Issue date Jun 14, 2011
- The Kansai Electric Power Co., Inc.
- Koji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method therefor
- Patent number 7,960,738
- Issue date Jun 14, 2011
- The Kansai Electric Power Co., Inc.
- Koji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method therefor
- Patent number 7,768,017
- Issue date Aug 3, 2010
- The Kansai Electric Co., Inc.
- Koji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20220123112
- Publication date Apr 21, 2022
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING...
- Publication number 20190393312
- Publication date Dec 26, 2019
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODU...
- Publication number 20150214306
- Publication date Jul 30, 2015
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Kazutoshi Kojima
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon carbide semiconductor device and manufacturing method therefor
- Publication number 20100258817
- Publication date Oct 14, 2010
- The Kansai Electric Power Co., Inc.
- Koji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device and manufacturing method therefor
- Publication number 20100261333
- Publication date Oct 14, 2010
- The Kansai Electric Power Co., Inc.
- Koji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Zener Diode
- Publication number 20100084663
- Publication date Apr 8, 2010
- Central Research Institute of Electric Power
- Ryosuke Ishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Semiconductor Device, Method for Producing the Same, and Me...
- Publication number 20100032686
- Publication date Feb 11, 2010
- The Kansai Electric Power Co., Inc.
- Ryosuke Ishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for Producing Silicon Carbide Semiconductor Device
- Publication number 20090317983
- Publication date Dec 24, 2009
- The Kansai Electric Power Co., Inc.
- Toshiyuki Miyanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Recovering an On-State Forward Voltage and, Shrinking St...
- Publication number 20090195296
- Publication date Aug 6, 2009
- The Kansai Electric Power Co., Inc.
- Toshiyuki Miyanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Bipolar Semiconductor Device
- Publication number 20090045413
- Publication date Feb 19, 2009
- The Kansai Electric Power Co., Inc.
- Ryosuke Ishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Semiconductor Device and Process for Producing the Same
- Publication number 20070290211
- Publication date Dec 20, 2007
- The Kansai Electric Power Co., Inc.
- Koji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device and manufacturing method therefor
- Publication number 20070090370
- Publication date Apr 26, 2007
- Koji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS

Koji Nakayama

Person

Patents Grantslast 30 patents

Silicon carbide semiconductor device and a method of manufacturing...

Semiconductor structure, semiconductor device, and method for produ...

Method for recovering an on-state forward voltage and, shrinking st...

Process for producing silicon carbide semiconductor device

Bipolar semiconductor device, method for producing the same, and me...

Silicon carbide bipolar semiconductor device

Silicon carbide Zener diode

Silicon carbide semiconductor device and manufacturing method therefor

Silicon carbide semiconductor device and manufacturing method therefor

Silicon carbide semiconductor device and manufacturing method therefor

Silicon carbide semiconductor device and manufacturing method therefor

Patents Applicationslast 30 patents

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING...

SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODU...

Silicon carbide semiconductor device and manufacturing method therefor

Silicon carbide semiconductor device and manufacturing method therefor

Silicon Carbide Zener Diode

Bipolar Semiconductor Device, Method for Producing the Same, and Me...

Process for Producing Silicon Carbide Semiconductor Device

Method for Recovering an On-State Forward Voltage and, Shrinking St...

Silicon Carbide Bipolar Semiconductor Device

Bipolar Semiconductor Device and Process for Producing the Same

Silicon carbide semiconductor device and manufacturing method therefor