Koji SADAMATSU

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating silicon carbide semiconductor device and pow...
- Patent number 12,131,906
- Issue date Oct 29, 2024
- Mitsubishi Electric Corporation
- Shiro Hino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and power converter
- Patent number 12,057,496
- Issue date Aug 6, 2024
- Mitsubishi Electric Corporation
- Yuichi Nagahisa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and power converter
- Patent number 11,682,723
- Issue date Jun 20, 2023
- Mitsubishi Electric Corporation
- Hideyuki Hatta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device having a conductive layer form...
- Patent number 11,646,369
- Issue date May 9, 2023
- Mitsubishi Electric Corporation
- Yuichi Nagahisa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and power converter
- Patent number 11,508,840
- Issue date Nov 22, 2022
- Mitsubishi Electric Corporation
- Shiro Hino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and power converter
- Patent number 11,355,627
- Issue date Jun 7, 2022
- Mitsubishi Electric Corporation
- Yuichi Nagahisa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,222,973
- Issue date Jan 11, 2022
- Mitsubishi Electric Corporation
- Shiro Hino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and power converter
- Patent number 11,189,720
- Issue date Nov 30, 2021
- Mitsubishi Electric Corporation
- Hideyuki Hatta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and power converter
- Patent number 11,049,963
- Issue date Jun 29, 2021
- Mitsubishi Electric Corporation
- Shiro Hino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device having a conductive layer form...
- Patent number 10,991,822
- Issue date Apr 27, 2021
- Mitsubishi Electric Corporation
- Yuichi Nagahisa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor device manufacturing method
- Patent number 10,475,920
- Issue date Nov 12, 2019
- Mitsubishi Electric Corporation
- Koji Sadamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,128,370
- Issue date Nov 13, 2018
- Mitsubishi Electric Corporation
- Kohei Ebihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,455,355
- Issue date Sep 27, 2016
- Mitsubishi Electric Corporation
- Eiko Otsuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of testing semiconductor device
- Patent number 9,401,314
- Issue date Jul 26, 2016
- Mitsubishi Electric Corporation
- Eiko Otsuki
- G01 - MEASURING TESTING
Information Patent Grant
High-breakdown-voltage power semiconductor device having a diode
- Patent number 9,257,541
- Issue date Feb 9, 2016
- Mitsubishi Electric Corporation
- Eiko Otsuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,598,622
- Issue date Dec 3, 2013
- Mitsubishi Electric Corporation
- Koji Sadamatsu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FABRICATING SILICON CARBIDE SEMICONDUCTOR DEVICE AND POW...
- Publication number 20230036221
- Publication date Feb 2, 2023
- Mitsubishi Electric Corporation
- Shiro HINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER
- Publication number 20220254906
- Publication date Aug 11, 2022
- Mitsubishi Electric Corporation
- Yuichi NAGAHISA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER
- Publication number 20220045204
- Publication date Feb 10, 2022
- Mitsubishi Electric Corporation
- Hideyuki HATTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE HAVING A CONDUCTIVE LAYER FORM...
- Publication number 20210226052
- Publication date Jul 22, 2021
- Mitsubishi Electric Corporation
- Yuichi NAGAHISA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER
- Publication number 20200321462
- Publication date Oct 8, 2020
- Mitsubishi Electric Corporation
- Shiro HINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER
- Publication number 20200312995
- Publication date Oct 1, 2020
- Mitsubishi Electric Corporation
- Yuichi NAGAHISA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER
- Publication number 20200295177
- Publication date Sep 17, 2020
- Mitsubishi Electric Corporation
- Shiro HINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER
- Publication number 20190371936
- Publication date Dec 5, 2019
- MITSUBISHI ELECTRIC CORPORATION
- Yuichi NAGAHISA
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER
- Publication number 20190371935
- Publication date Dec 5, 2019
- MITSUBISHI ELECTRIC CORPORATION
- Hideyuki HATTA
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20190181259
- Publication date Jun 13, 2019
- Mitsubishi Electric corporation
- Shiro HINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20180097103
- Publication date Apr 5, 2018
- MITSUBISHI ELECTRIC CORPORATION
- Koji SADAMATSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170236935
- Publication date Aug 17, 2017
- MITSUBISHI ELECTRIC CORPORATION
- Kohei EBIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160087110
- Publication date Mar 24, 2016
- MIitsubishi Electric Corporation
- Eiko OTSUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF TESTING SEMICONDUCTOR DEVICE
- Publication number 20140363906
- Publication date Dec 11, 2014
- Mitsubishi Electric Corporation
- Eiko OTSUKI
- G01 - MEASURING TESTING
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20140091359
- Publication date Apr 3, 2014
- Mitsubishi Electric Corporation
- Eiko OTSUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20120273836
- Publication date Nov 1, 2012
- MITSUBISHI ELECTRIC CORPORATION
- Koji Sadamatsu
- H01 - BASIC ELECTRIC ELEMENTS

Koji SADAMATSU

Person

Patents Grantslast 30 patents

Method for fabricating silicon carbide semiconductor device and pow...

Silicon carbide semiconductor device and power converter

Silicon carbide semiconductor device and power converter

Silicon carbide semiconductor device having a conductive layer form...

Silicon carbide semiconductor device and power converter

Silicon carbide semiconductor device and power converter

Semiconductor device

Silicon carbide semiconductor device and power converter

Silicon carbide semiconductor device and power converter

Silicon carbide semiconductor device having a conductive layer form...

Semiconductor device and semiconductor device manufacturing method

Semiconductor device

Semiconductor device

Method of testing semiconductor device

High-breakdown-voltage power semiconductor device having a diode

Semiconductor device

Patents Applicationslast 30 patents

METHOD FOR FABRICATING SILICON CARBIDE SEMICONDUCTOR DEVICE AND POW...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER

SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER

SILICON CARBIDE SEMICONDUCTOR DEVICE HAVING A CONDUCTIVE LAYER FORM...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER

SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER

SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER

SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER

SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

METHOD OF TESTING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE