Koji Uematsu

Person

Itami-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Gallium arsenide single crystal substrate and method for producing...
- Patent number 11,891,720
- Issue date Feb 6, 2024
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- G01 - MEASURING TESTING
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 11,094,537
- Issue date Aug 17, 2021
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 10,600,676
- Issue date Mar 24, 2020
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- B32 - LAYERED PRODUCTS
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 9,923,063
- Issue date Mar 20, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 9,917,004
- Issue date Mar 13, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride crystal substrates and group III nitride crystal
- Patent number 9,368,568
- Issue date Jun 14, 2016
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of growing III-nitride crystal
- Patent number 9,279,194
- Issue date Mar 8, 2016
- Sumitomo Electric Industries, Ltd.
- Hiroaki Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Composite base including sintered base and base surface flattening...
- Patent number 9,184,228
- Issue date Nov 10, 2015
- Sumitomo Electric Industries, Ltd.
- Yuki Seki
- B32 - LAYERED PRODUCTS
Information Patent Grant
GaN-crystal free-standing substrate and method for producing the same
- Patent number 9,153,742
- Issue date Oct 6, 2015
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Composite of III-nitride crystal on laterally stacked substrates
- Patent number 9,064,706
- Issue date Jun 23, 2015
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing group III nitride crystal
- Patent number 9,005,362
- Issue date Apr 14, 2015
- Sumitomo Electric Industries, Ltd.
- Yuki Hiromura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing GaN-based film and composite substrate used...
- Patent number 8,962,365
- Issue date Feb 24, 2015
- Sumitomo Electric Industies, Ltd.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Grant
Composite of III-nitride crystal on laterally stacked substrates
- Patent number 8,872,309
- Issue date Oct 28, 2014
- Sumitomo Electronic Industries, Ltd.
- Naho Mizuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing group III nitride crystal
- Patent number 8,847,363
- Issue date Sep 30, 2014
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN single crystal substrate having a large area and a main surface...
- Patent number 8,823,142
- Issue date Sep 2, 2014
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing semiconductor wafer, and composite base and...
- Patent number 8,748,890
- Issue date Jun 10, 2014
- Sumitomo Electric Industries, Ltd.
- Yuki Seki
- B32 - LAYERED PRODUCTS
Information Patent Grant
Method of manufacturing III-nitride crystal
- Patent number 8,709,923
- Issue date Apr 29, 2014
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing GaN-based film
- Patent number 8,697,550
- Issue date Apr 15, 2014
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing GaN-based film
- Patent number 8,697,564
- Issue date Apr 15, 2014
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing GaN-based film
- Patent number 8,658,517
- Issue date Feb 25, 2014
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing GaN-based film
- Patent number 8,658,527
- Issue date Feb 25, 2014
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN single crystal substrate and method of manufacturing thereof an...
- Patent number 8,598,685
- Issue date Dec 3, 2013
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN-crystal free-standing substrate and method for producing the same
- Patent number 8,574,364
- Issue date Nov 5, 2013
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride crystal and method for producing the same
- Patent number 8,524,575
- Issue date Sep 3, 2013
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of manufacturing semiconductor wafer, and composite base and...
- Patent number 8,497,185
- Issue date Jul 30, 2013
- Sumitomo Electric Industries, Ltd.
- Yuki Seki
- B32 - LAYERED PRODUCTS
Information Patent Grant
Group-III nitride crystal composite
- Patent number 8,404,042
- Issue date Mar 26, 2013
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Fabrication method and fabrication apparatus of group III nitride c...
- Patent number 8,404,569
- Issue date Mar 26, 2013
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
III nitride semiconductor crystal, III nitride semiconductor device...
- Patent number 8,362,521
- Issue date Jan 29, 2013
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride crystal substrate and III-nitride semiconductor device
- Patent number 8,310,030
- Issue date Nov 13, 2012
- Sumitomo Electric Industries, Ltd.
- Ryu Hirota
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-V compound crystal and semiconductor electronic circuit element
- Patent number 8,304,334
- Issue date Nov 6, 2012
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
GROUP III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND PRO...
- Publication number 20240426024
- Publication date Dec 26, 2024
- Sumitomo Electric Industries, Ltd.
- Kazuki NODA
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING...
- Publication number 20230002931
- Publication date Jan 5, 2023
- Sumitomo Electric Industries, Ltd.
- Koji UEMATSU
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20200176305
- Publication date Jun 4, 2020
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20180166325
- Publication date Jun 14, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20150380496
- Publication date Dec 31, 2015
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20150194442
- Publication date Jul 9, 2015
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing GaN-Based Film and Composite Substrate Used...
- Publication number 20150118830
- Publication date Apr 30, 2015
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite of III-Nitride Crystal on Laterally Stacked Substrates
- Publication number 20150008563
- Publication date Jan 8, 2015
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride Crystal Substrates and Group III Nitride Crystal
- Publication number 20140369920
- Publication date Dec 18, 2014
- Koji Uematsu
- C30 - CRYSTAL GROWTH
Information Patent Application
Composite of III-Nitride Crystal on Laterally Stacked Substrates
- Publication number 20140175616
- Publication date Jun 26, 2014
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN Single Crystal Substrate and Method of Manufacturing Thereof an...
- Publication number 20140061668
- Publication date Mar 6, 2014
- Sumitomo Electric Industries, Ltd.
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Group III Nitride Crystal
- Publication number 20130337632
- Publication date Dec 19, 2013
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME
- Publication number 20130292737
- Publication date Nov 7, 2013
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...
- Publication number 20130244406
- Publication date Sep 19, 2013
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR WAFER, AND COMPOSITE BASE AND...
- Publication number 20130221492
- Publication date Aug 29, 2013
- Sumitomo Electric Industries, Ltd.
- Yuki SEKI
- B32 - LAYERED PRODUCTS
Information Patent Application
Method of Manufacturing III-Nitride Crystal
- Publication number 20130160699
- Publication date Jun 27, 2013
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING GaN-BASED FILM AND COMPOSITE SUBSTRATE USED...
- Publication number 20130149847
- Publication date Jun 13, 2013
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING GaN-BASED FILM
- Publication number 20130040442
- Publication date Feb 14, 2013
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride Crystal and Method for Producing the Same
- Publication number 20120329245
- Publication date Dec 27, 2012
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- C30 - CRYSTAL GROWTH
Information Patent Application
Group-III Nitride Crystal Composite
- Publication number 20120315445
- Publication date Dec 13, 2012
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR WAFER, AND COMPOSITE BASE AND...
- Publication number 20120228613
- Publication date Sep 13, 2012
- SUMITOMO ELECTRIC INDUSTIRES, LTD.
- Yuki SEKI
- B32 - LAYERED PRODUCTS
Information Patent Application
COMPOSITE BASE INCLUDING SINTERED BASE AND BASE SURFACE FLATTENING...
- Publication number 20120228612
- Publication date Sep 13, 2012
- Sumitomo Electric Industries, Ltd.
- Yuki Seki
- B32 - LAYERED PRODUCTS
Information Patent Application
METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRID...
- Publication number 20120164058
- Publication date Jun 28, 2012
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Tomoki UEMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
III-V Compound Crystal and Semiconductor Electronic Circuit Element
- Publication number 20120142168
- Publication date Jun 7, 2012
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING GaN-BASED FILM
- Publication number 20120122301
- Publication date May 17, 2012
- Sumitomo Electric Industries, Ltd.
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING GaN-BASED FILM
- Publication number 20120118222
- Publication date May 17, 2012
- Sumitomo Electric Industries, Ltd.
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE
- Publication number 20120074403
- Publication date Mar 29, 2012
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME
- Publication number 20120034149
- Publication date Feb 9, 2012
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Manufacturing Nitride Semiconductor Substrate
- Publication number 20120034763
- Publication date Feb 9, 2012
- Sumitomo Electric Industries, Ltd.
- Hideki Osada
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING GROUP III NITRIDE CRYSTAL
- Publication number 20120031324
- Publication date Feb 9, 2012
- Sumitomo Electric Industries, Ltd.
- Yuki Hiromura
- C30 - CRYSTAL GROWTH

Koji Uematsu

Person

Patents Grantslast 30 patents

Gallium arsenide single crystal substrate and method for producing...

Group III nitride composite substrate and method for manufacturing...

Group III nitride composite substrate and method for manufacturing...

Group III nitride composite substrate and method for manufacturing...

Group III nitride composite substrate and method for manufacturing...

Group III nitride crystal substrates and group III nitride crystal

Method of growing III-nitride crystal

Composite base including sintered base and base surface flattening...

GaN-crystal free-standing substrate and method for producing the same

Composite of III-nitride crystal on laterally stacked substrates

Method for growing group III nitride crystal

Method of manufacturing GaN-based film and composite substrate used...

Composite of III-nitride crystal on laterally stacked substrates

Method for producing group III nitride crystal

GaN single crystal substrate having a large area and a main surface...

Method of manufacturing semiconductor wafer, and composite base and...

Method of manufacturing III-nitride crystal

Method of manufacturing GaN-based film

Method of manufacturing GaN-based film

Method of manufacturing GaN-based film

Method of manufacturing GaN-based film

GaN single crystal substrate and method of manufacturing thereof an...

GaN-crystal free-standing substrate and method for producing the same

Group III nitride crystal and method for producing the same

Method of manufacturing semiconductor wafer, and composite base and...

Group-III nitride crystal composite

Fabrication method and fabrication apparatus of group III nitride c...

III nitride semiconductor crystal, III nitride semiconductor device...

III-nitride crystal substrate and III-nitride semiconductor device

III-V compound crystal and semiconductor electronic circuit element

Patents Applicationslast 30 patents

GROUP III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND PRO...

GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

Method of Manufacturing GaN-Based Film and Composite Substrate Used...

Composite of III-Nitride Crystal on Laterally Stacked Substrates

Group III Nitride Crystal Substrates and Group III Nitride Crystal

Composite of III-Nitride Crystal on Laterally Stacked Substrates

GaN Single Crystal Substrate and Method of Manufacturing Thereof an...

Method for Producing Group III Nitride Crystal

GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME

FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...

METHOD OF MANUFACTURING SEMICONDUCTOR WAFER, AND COMPOSITE BASE AND...

Method of Manufacturing III-Nitride Crystal

METHOD OF MANUFACTURING GaN-BASED FILM AND COMPOSITE SUBSTRATE USED...

METHOD OF MANUFACTURING GaN-BASED FILM

Group III Nitride Crystal and Method for Producing the Same

Group-III Nitride Crystal Composite

METHOD OF MANUFACTURING SEMICONDUCTOR WAFER, AND COMPOSITE BASE AND...

COMPOSITE BASE INCLUDING SINTERED BASE AND BASE SURFACE FLATTENING...

METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRID...

III-V Compound Crystal and Semiconductor Electronic Circuit Element

METHOD OF MANUFACTURING GaN-BASED FILM

METHOD OF MANUFACTURING GaN-BASED FILM

METHOD FOR GROWING GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE

GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME

Method of Manufacturing Nitride Semiconductor Substrate

METHOD FOR GROWING GROUP III NITRIDE CRYSTAL