Konrad Hieber

Person

Munich, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Method for metallizing submicron contact holes in semiconductor bodies
- Patent number 6,057,229
- Issue date May 2, 2000
- Siemens Aktiengesellschaft
- Konrad Hieber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for determining the mass flow of gases on the basis of optic...
- Patent number 5,526,122
- Issue date Jun 11, 1996
- Siemens Aktiengesellschaft
- Andreas Intemann
- G01 - MEASURING TESTING
Information Patent Grant
Method and apparatus for producing conductive layers or structures...
- Patent number 5,478,780
- Issue date Dec 26, 1995
- Siemens Aktiengesellschaft
- Heinrich Koerner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for locally and globally planarizing chemical vapor depositi...
- Patent number 5,399,389
- Issue date Mar 21, 1995
- Siemens Aktiengesellschaft
- Konrad Hieber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for monitoring etching processes
- Patent number 4,810,335
- Issue date Mar 7, 1989
- Siemens Aktiengesellschaft
- Konrad Hieber
- G01 - MEASURING TESTING
Information Patent Grant
Method for controlling and supervising etching processes
- Patent number 4,767,496
- Issue date Aug 30, 1988
- Siemens Aktiengesellschaft
- Konrad Hieber
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for the manufacture of cross-couplings between n-channel and...
- Patent number 4,740,479
- Issue date Apr 26, 1988
- Siemens Aktiengesellschaft
- Franz Neppl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated semiconductor circuit including a tantalum silicide diff...
- Patent number 4,680,612
- Issue date Jul 14, 1987
- Siemens Aktiengesellschaft
- Konrad Hieber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated MOS transistors having a gate metallization composed of...
- Patent number 4,673,968
- Issue date Jun 16, 1987
- Siemens Aktiengesellschaft
- Konrad Hieber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the manufacture of gate electrodes formed of double laye...
- Patent number 4,640,844
- Issue date Feb 3, 1987
- Siemens Aktiengesellschaft
- Franz Neppl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the manufacture of metal silicide layers by means of red...
- Patent number 4,608,271
- Issue date Aug 26, 1986
- Siemens Aktiengesellschaft
- Konrad Hieber
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for monitoring and regulating the composition and the layer...
- Patent number 4,592,921
- Issue date Jun 3, 1986
- Siemens Aktiengesellschaft
- Konrad Hieber
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of measuring electric resistance of thin metallic layers man...
- Patent number 4,562,089
- Issue date Dec 31, 1985
- Siemens Aktiengesellschaft
- Konrad Hieber
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
System for measuring electrical resistance and temperature during m...
- Patent number 4,543,576
- Issue date Sep 24, 1985
- Siemens Aktiengesellschaft
- Konrad Hieber
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for the manufacture of integrated MOS-field effect transisto...
- Patent number 4,510,670
- Issue date Apr 16, 1985
- Siemens Aktiengesellschaft
- Ulrich Schwabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selective deposition of layer structures consisting of s...
- Patent number 4,501,769
- Issue date Feb 26, 1985
- Siemens Aktiengesellschaft
- Konrad Hieber
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Thin film electrical resistors and process of producing the same
- Patent number 4,414,274
- Issue date Nov 8, 1983
- Siemens Aktiengesellschaft
- Konrad Hieber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing low-resistant, monocrystalline metallic layers...
- Patent number 4,351,695
- Issue date Sep 28, 1982
- Siemens Aktiengesellschaft
- Konrad Hieber
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for reproducible manufacture of metallic layers
- Patent number 4,331,702
- Issue date May 25, 1982
- Siemens Aktiengesellschaft
- Konrad Hieber
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for depositing a layer on the inside of cavities of a work p...
- Patent number 4,294,871
- Issue date Oct 13, 1981
- Siemens Aktiengesellschaft
- Konrad Hieber
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
CVD Coating device for small parts
- Patent number 4,258,658
- Issue date Mar 31, 1981
- Siemens Aktiengesellschaft
- Alfred Politycki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Konrad Hieber

Person

Patents Grantslast 30 patents

Method for metallizing submicron contact holes in semiconductor bodies

Method for determining the mass flow of gases on the basis of optic...

Method and apparatus for producing conductive layers or structures...

Method for locally and globally planarizing chemical vapor depositi...

Method for monitoring etching processes

Method for controlling and supervising etching processes

Method for the manufacture of cross-couplings between n-channel and...

Integrated semiconductor circuit including a tantalum silicide diff...

Integrated MOS transistors having a gate metallization composed of...

Method for the manufacture of gate electrodes formed of double laye...

Method for the manufacture of metal silicide layers by means of red...

Method for monitoring and regulating the composition and the layer...

Method of measuring electric resistance of thin metallic layers man...

System for measuring electrical resistance and temperature during m...

Method for the manufacture of integrated MOS-field effect transisto...

Method for selective deposition of layer structures consisting of s...

Thin film electrical resistors and process of producing the same

Method of producing low-resistant, monocrystalline metallic layers...

Method for reproducible manufacture of metallic layers

Method for depositing a layer on the inside of cavities of a work p...

CVD Coating device for small parts