Kouhei Miura

Person

Itami-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Detection device, photodiode array, and method for manufacturing th...
- Patent number 8,969,851
- Issue date Mar 3, 2015
- Sumitomo Electric Industries, Ltd
- Hiroshi Inada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer, light-receiving element, light-receiving eleme...
- Patent number 8,642,943
- Issue date Feb 4, 2014
- Sumitomo Electric Industries, Ltd
- Hiroki Mori
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Group III nitride semiconductor device and epitaxial substrate
- Patent number 8,410,524
- Issue date Apr 2, 2013
- Sumitomo Electric Industries, Ltd.
- Tatsuya Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor, field-effect transistor, and epi...
- Patent number 7,884,393
- Issue date Feb 8, 2011
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photodetector and production method thereof
- Patent number 7,875,906
- Issue date Jan 25, 2011
- Sumitomo Electric Industries, Ltd
- Youichi Nagai
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Vertical gallium nitride semiconductor device and epitaxial substrate
- Patent number 7,872,285
- Issue date Jan 18, 2011
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride semiconductor device and epitaxial substrate
- Patent number 7,763,892
- Issue date Jul 27, 2010
- Sumitomo Electric Industries, Ltd.
- Kouhei Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing group III Nitride Transistor
- Patent number 7,749,828
- Issue date Jul 6, 2010
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN substrate and method of fabricating the same, nitride semicondu...
- Patent number 7,387,678
- Issue date Jun 17, 2008
- Sumitomo Electric Industries, Ltd.
- Katsushi Akita
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR WAFER, LIGHT-RECEIVING ELEMENT, LIGHT-RECEIVING ELEME...
- Publication number 20130048838
- Publication date Feb 28, 2013
- Sumitomo Electric Industries, Ltd.
- Hiroki Mori
- B82 - NANO-TECHNOLOGY
Information Patent Application
DETECTION DEVICE, PHOTODIODE ARRAY, AND METHOD FOR MANUFACTURING TH...
- Publication number 20110147707
- Publication date Jun 23, 2011
- Sumitomo Electric Industries, Ltd.
- Hiroshi INADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Electron Mobility Transistor, Field-Effect Transistor, and Epi...
- Publication number 20100230723
- Publication date Sep 16, 2010
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Gallium Nitride Semiconductor Device and Epitaxial Substrate
- Publication number 20090194796
- Publication date Aug 6, 2009
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride Semiconductor Device and Epitaxial Substrate
- Publication number 20090189186
- Publication date Jul 30, 2009
- Sumitomo Electric Industries, Ltd.
- Tatsuya Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Electron Mobility Transistor, Field-Effect Transistor, Epitaxi...
- Publication number 20090189190
- Publication date Jul 30, 2009
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, EPITAXIAL WAFER, AND METHOD OF MANUFACTURING...
- Publication number 20090057721
- Publication date Mar 5, 2009
- Sumitomo Electric Industries, Ltd.
- Kouhei Miura
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
PHOTODETECTOR AND PRODUCTION METHOD THEREOF
- Publication number 20090001412
- Publication date Jan 1, 2009
- Sumitomo Electric Industries, Ltd.
- Youichi Nagai
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Group III Nitride Semiconductor Device and Epitaxial Substrate
- Publication number 20080315209
- Publication date Dec 25, 2008
- Sumitomo Electric Industries, Ltd.
- Kouhei Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride Semiconductor Device and Epitaxial Substrate
- Publication number 20080265258
- Publication date Oct 30, 2008
- Sumitomo Electric Industries, Ltd.
- Tatsuya Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN substrate and method of fabricating the same, nitride semicondu...
- Publication number 20040262624
- Publication date Dec 30, 2004
- Katsushi Akita
- C30 - CRYSTAL GROWTH

Kouhei Miura

Person

Patents Grantslast 30 patents

Detection device, photodiode array, and method for manufacturing th...

Semiconductor wafer, light-receiving element, light-receiving eleme...

Group III nitride semiconductor device and epitaxial substrate

High electron mobility transistor, field-effect transistor, and epi...

Photodetector and production method thereof

Vertical gallium nitride semiconductor device and epitaxial substrate

Group III nitride semiconductor device and epitaxial substrate

Method of manufacturing group III Nitride Transistor

GaN substrate and method of fabricating the same, nitride semicondu...

Patents Applicationslast 30 patents

SEMICONDUCTOR WAFER, LIGHT-RECEIVING ELEMENT, LIGHT-RECEIVING ELEME...

DETECTION DEVICE, PHOTODIODE ARRAY, AND METHOD FOR MANUFACTURING TH...

High Electron Mobility Transistor, Field-Effect Transistor, and Epi...

Vertical Gallium Nitride Semiconductor Device and Epitaxial Substrate

Group III Nitride Semiconductor Device and Epitaxial Substrate

High Electron Mobility Transistor, Field-Effect Transistor, Epitaxi...

SEMICONDUCTOR DEVICE, EPITAXIAL WAFER, AND METHOD OF MANUFACTURING...

PHOTODETECTOR AND PRODUCTION METHOD THEREOF

Group III Nitride Semiconductor Device and Epitaxial Substrate

Group III Nitride Semiconductor Device and Epitaxial Substrate

GaN substrate and method of fabricating the same, nitride semicondu...