Kouhei Morizuka

Person

Kanagawa-ken, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Nitride semiconductor device
- Patent number 7,329,909
- Issue date Feb 12, 2008
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device suited for a high frequency amplifier
- Patent number 7,038,250
- Issue date May 2, 2006
- Kabushiki Kaisha Toshiba
- Toru Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High frequency semiconductor module, high frequency semiconductor d...
- Patent number 6,940,157
- Issue date Sep 6, 2005
- Kabushiki Kaisha Toshiba
- Toru Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High frequency semiconductor module, high frequency semiconductor d...
- Patent number 6,790,694
- Issue date Sep 14, 2004
- Kabushiki Kaisha Toshiba
- Toru Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High frequency power amplifier having a bipolar transistor
- Patent number 6,448,859
- Issue date Sep 10, 2002
- Kabushiki Kaisha Toshiba
- Kouhei Morizuka
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device
- Patent number 6,344,775
- Issue date Feb 5, 2002
- Kabushiki Kaisha Toshiba
- Kouhei Morizuka
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Heterojunction bipolar transistor and manufacturing method thereof
- Patent number 6,127,716
- Issue date Oct 3, 2000
- Kabushiki Kaisha Toshiba
- Kouhei Morizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing thereof
- Patent number 6,051,484
- Issue date Apr 18, 2000
- Kabushiki Kaisha Toshiba
- Kouhei Morizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rectifying device for achieving a high power efficiency
- Patent number 5,930,133
- Issue date Jul 27, 1999
- Kabushiki Kaisha Toshiba
- Kouhei Morizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microwave integrated circuit
- Patent number 5,898,200
- Issue date Apr 27, 1999
- Kabushiki Kaisha Toshiba
- Toru Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra high frequency radio communication apparatus
- Patent number 5,898,909
- Issue date Apr 27, 1999
- Kabushiki Kaisha Toshiba
- Kunio Yoshihara
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,637,909
- Issue date Jun 10, 1997
- Kabushiki Kaisha Toshiba
- Hiroomi Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,510,647
- Issue date Apr 23, 1996
- Kabushiki Kaisha Toshiba
- Hiroomi Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with base electrode having Schott...
- Patent number 5,331,186
- Issue date Jul 19, 1994
- Kabushiki Kaisha Toshiba
- Kouhei Morizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor device having an emitter contact structure i...
- Patent number 5,266,818
- Issue date Nov 30, 1993
- Kabushiki Kaisha Toshiba
- Kunio Tsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,153,692
- Issue date Oct 6, 1992
- Kabushiki Kaisha Toshiba
- Kouhei Morizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor having external base region
- Patent number 5,124,270
- Issue date Jun 23, 1992
- Kabushiki Kaisha Toshiba
- Kouhei Morizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor bipolar device with phosphorus doping
- Patent number 5,053,846
- Issue date Oct 1, 1991
- Kabushiki Kaisha Toshiba
- Kouhei Morizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor
- Patent number 4,933,732
- Issue date Jun 12, 1990
- Kabushiki Kaisha Toshiba
- Riichi Katoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a heterojunction bipolar transistor having...
- Patent number 4,679,305
- Issue date Jul 14, 1987
- Kabushiki Kaisha Toshiba
- Kouhei Morizuka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Nitride semiconductor device
- Publication number 20060170003
- Publication date Aug 3, 2006
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High frequency semiconductor module, high frequency semiconductor d...
- Publication number 20050006742
- Publication date Jan 13, 2005
- Kabushiki Kaisha Toshiba
- Toru Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20050001233
- Publication date Jan 6, 2005
- Kabushiki Kaisha Toshiba
- Toru Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High frequency semiconductor module, high frequency semiconductor d...
- Publication number 20040036167
- Publication date Feb 26, 2004
- Kabushiki Kaisha Toshiba
- Toru Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High frequency power amplifier having a bipolar transistor
- Publication number 20010052820
- Publication date Dec 20, 2001
- KABUSHIKI KAISHA TOSHIBA
- Kouhei Morizuka
- H03 - BASIC ELECTRONIC CIRCUITRY

Kouhei Morizuka

Person

Patents Grantslast 30 patents

Nitride semiconductor device

Semiconductor device suited for a high frequency amplifier

High frequency semiconductor module, high frequency semiconductor d...

High frequency semiconductor module, high frequency semiconductor d...

High frequency power amplifier having a bipolar transistor

Semiconductor device

Heterojunction bipolar transistor and manufacturing method thereof

Semiconductor device and method of manufacturing thereof

Rectifying device for achieving a high power efficiency

Microwave integrated circuit

Ultra high frequency radio communication apparatus

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Heterojunction bipolar transistor with base electrode having Schott...

Compound semiconductor device having an emitter contact structure i...

Semiconductor device

Bipolar transistor having external base region

Semiconductor bipolar device with phosphorus doping

Heterojunction bipolar transistor

Method of manufacturing a heterojunction bipolar transistor having...

Patents Applicationslast 30 patents

Nitride semiconductor device

High frequency semiconductor module, high frequency semiconductor d...

Semiconductor device

High frequency semiconductor module, high frequency semiconductor d...

High frequency power amplifier having a bipolar transistor