Kouichi Nagasawa

Person

Kunitachi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor memory device having first and second selecting lines...
- Patent number 5,122,857
- Issue date Jun 16, 1992
- Hitachi, Ltd.
- Shuji Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating semiconductor integrated circuit devices
- Patent number 5,055,420
- Issue date Oct 8, 1991
- Hitachi, Ltd.
- Shuji Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and a process for producing the same
- Patent number 5,028,975
- Issue date Jul 2, 1991
- Hitachi, Ltd.
- Kouichi Nagasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 5,005,068
- Issue date Apr 2, 1991
- Hitachi, Ltd.
- Shuji Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device to prevent out-diffusion of impurities from on...
- Patent number 4,990,998
- Issue date Feb 5, 1991
- Hitachi, Ltd.
- Atsuyoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Read-only memory
- Patent number 4,912,674
- Issue date Mar 27, 1990
- Hitachi, Ltd.
- Youichi Matsumoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory cell device with thick insulative layer
- Patent number 4,890,148
- Issue date Dec 26, 1989
- Hitachi, Ltd.
- Shuji Ikeda
- G11 - INFORMATION STORAGE
Information Patent Grant
Read-only memory
- Patent number 4,805,143
- Issue date Feb 14, 1989
- Hitachi Ltd.
- Youichi Matsumoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device sram to prevent out-diffusion
- Patent number 4,803,534
- Issue date Feb 7, 1989
- Hitachi, Ltd.
- Atsuyoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and a process for producing the same
- Patent number 4,792,841
- Issue date Dec 20, 1988
- Hitachi, Ltd.
- Kouichi Nagasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating semiconductor devices to prevent alloy spiking
- Patent number 4,734,383
- Issue date Mar 29, 1988
- Hitachi, Ltd.
- Shuji Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating semiconductor integrated circuit device
- Patent number 4,637,124
- Issue date Jan 20, 1987
- Hitachi, Ltd.
- Kousuke Okuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing semiconductor devices
- Patent number 4,626,450
- Issue date Dec 2, 1986
- Hitachi, Ltd.
- Akihiko Tani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making CMOS semiconductor device using specially position...
- Patent number 4,549,340
- Issue date Oct 29, 1985
- Hitachi, Ltd.
- Kouichi Nagasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing complementary insulated gate field effect...
- Patent number RE31079
- Issue date Nov 16, 1982
- Hitachi, Ltd.
- Kouichi Nagasawa
- 029 - Metal working
Information Patent Grant
Method for manufacturing complementary insulated gate field effect...
- Patent number 4,110,899
- Issue date Sep 5, 1978
- Hitachi, Ltd.
- Kouichi Nagasawa
- H01 - BASIC ELECTRIC ELEMENTS

Kouichi Nagasawa

Person

Patents Grantslast 30 patents

Semiconductor memory device having first and second selecting lines...

Process for fabricating semiconductor integrated circuit devices

Semiconductor devices and a process for producing the same

Semiconductor memory device

Semiconductor device to prevent out-diffusion of impurities from on...

Read-only memory

Semiconductor memory cell device with thick insulative layer

Read-only memory

Semiconductor device sram to prevent out-diffusion

Semiconductor devices and a process for producing the same

Fabricating semiconductor devices to prevent alloy spiking

Process for fabricating semiconductor integrated circuit device

Process for producing semiconductor devices

Method of making CMOS semiconductor device using specially position...

Method for manufacturing complementary insulated gate field effect...

Method for manufacturing complementary insulated gate field effect...