Kouji Tsunoda

Person

Kawasaki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Oxidizing a metal layer for a dielectric having a platinum electrode
- Patent number 7,470,595
- Issue date Dec 30, 2008
- Fujitsu Limited
- Nobuyuki Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Direct tunneling memory with separated transistor and tunnel areas
- Patent number 7,462,539
- Issue date Dec 9, 2008
- Fujitsu Limited
- Kouji Tsunoda
- G11 - INFORMATION STORAGE
Information Patent Grant
Direct tunneling semiconductor memory device and fabrication proces...
- Patent number 7,432,153
- Issue date Oct 7, 2008
- Fujitsu Limited
- Kouji Tsunoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Direct tunneling memory with separated transistor and tunnel areas
- Patent number 7,288,811
- Issue date Oct 30, 2007
- Fujitsu Limited
- Kouji Tsunoda
- G11 - INFORMATION STORAGE
Information Patent Grant
Direct tunneling semiconductor memory device and fabrication proces...
- Patent number 7,288,813
- Issue date Oct 30, 2007
- Fujitsu Limited
- Kouji Tsunoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device suitable for forming conductive film such as p...
- Patent number 7,102,189
- Issue date Sep 5, 2006
- Fujitsu Limited
- Nobuyuki Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,924,526
- Issue date Aug 2, 2005
- Fujitsu Limited
- Masatoshi Fukuda
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Direct tunneling semiconductor memory device and fabrication proces...
- Publication number 20080057648
- Publication date Mar 6, 2008
- Fujitsu Limited
- Kouji Tsunoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Direct tunneling memory with separated transistor and tunnel areas
- Publication number 20080014701
- Publication date Jan 17, 2008
- FUJITSU LIMITED
- Kouji Tsunoda
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor device suitable for forming conductive film such as p...
- Publication number 20060286744
- Publication date Dec 21, 2006
- FUJITSU LIMITED
- Nobuyuki Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Direct tunneling semiconductor memory device and fabrication proces...
- Publication number 20060043464
- Publication date Mar 2, 2006
- FUJITSU LIMITED
- Kouji Tsunoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Direct tunneling memory with separated transistor and tunnel areas
- Publication number 20050230741
- Publication date Oct 20, 2005
- FUJITSU LIMITED
- Kouji Tsunoda
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor device suitable for forming conductive film such as p...
- Publication number 20040150021
- Publication date Aug 5, 2004
- FUJITSU LIMITED
- Nobuyuki Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20020079526
- Publication date Jun 27, 2002
- FUJITSU LIMITED
- Masatoshi Fukuda
- H01 - BASIC ELECTRIC ELEMENTS

Kouji Tsunoda

Person

Patents Grantslast 30 patents

Oxidizing a metal layer for a dielectric having a platinum electrode

Direct tunneling memory with separated transistor and tunnel areas

Direct tunneling semiconductor memory device and fabrication proces...

Direct tunneling memory with separated transistor and tunnel areas

Direct tunneling semiconductor memory device and fabrication proces...

Semiconductor device suitable for forming conductive film such as p...

Semiconductor device and method for fabricating the same

Patents Applicationslast 30 patents

Direct tunneling semiconductor memory device and fabrication proces...

Direct tunneling memory with separated transistor and tunnel areas

Semiconductor device suitable for forming conductive film such as p...

Direct tunneling semiconductor memory device and fabrication proces...

Direct tunneling memory with separated transistor and tunnel areas

Semiconductor device suitable for forming conductive film such as p...

Semiconductor device and method for fabricating the same