Kouji Uematsu

Follow

Person

Hyogo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
AlxInyGal-x-yN mixture crystal substrate, method of growing same an...
- Patent number 8,198,177
- Issue date Jun 12, 2012
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Grant
AlxInyGa1-x-yN mixture crystal substrate, method of growing same an...
- Patent number 8,067,300
- Issue date Nov 29, 2011
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Grant
A1xInyGa1-x-yN mixture crystal substrate, method of growing same an...
- Patent number 7,655,960
- Issue date Feb 2, 2010
- Sumito Electric Industries, Ltd.
- Seiji Nakahata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AlxInyGa1−x−yN mixture crystal substrate
- Patent number 7,105,865
- Issue date Sep 12, 2006
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AN...
- Publication number 20120040511
- Publication date Feb 16, 2012
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Application
AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AN...
- Publication number 20090215248
- Publication date Aug 27, 2009
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Application
A1xInyGa1-x-yN mixture crystal substrate, method of growing same an...
- Publication number 20060273343
- Publication date Dec 7, 2006
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Application
AlxInyGa1-x-yN mixture crystal substrate, method of growing same an...
- Publication number 20050161697
- Publication date Jul 28, 2005
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH