Kozo Nakamura

Person

Nagasaki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Thermal processing method for silicon wafer
- Patent number 11,162,191
- Issue date Nov 2, 2021
- Globalwafers Japan Co., Ltd
- Susumu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon wafer
- Patent number 10,648,101
- Issue date May 12, 2020
- Globalwafers Japan Co., Ltd
- Susumu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon wafer heat treatment method
- Patent number 8,573,969
- Issue date Nov 5, 2013
- Sumco Techxiv Corporation
- Shinya Sadohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for predicting precipitation behavior of oxygen in silicon s...
- Patent number 8,246,744
- Issue date Aug 21, 2012
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Kozo Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of predicting internal gettering behavior in silicon substra...
- Patent number 7,920,999
- Issue date Apr 5, 2011
- Sumco Techxiv Corporation
- Kozo Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal producing method, annealed wafer, and method...
- Patent number 7,875,116
- Issue date Jan 25, 2011
- Sumco Techxiv Corporation
- Shinya Sadohara
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing silicon wafer
- Patent number 7,329,317
- Issue date Feb 12, 2008
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Susumu Maeda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing single-crystal semiconductor and apparatus fo...
- Patent number 7,235,128
- Issue date Jun 26, 2007
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Susumu Maeda
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Production method for silicon single crystal and production device...
- Patent number 7,141,113
- Issue date Nov 28, 2006
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Kozo Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing silicon single crystal having no flaw
- Patent number 6,869,478
- Issue date Mar 22, 2005
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Kozo Nakamura
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon wafer for hydrogen heat treatment and method for manufactur...
- Patent number 6,273,944
- Issue date Aug 14, 2001
- Komatsu Electronic Metals Co., Ltd.
- Toshiaki Saishoji
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon single crystals and wafers adapted...
- Patent number 6,179,910
- Issue date Jan 30, 2001
- Komatsu Electronic Metals Co., LTD
- Takashi Yokoyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer for hydrogen heat treatment and method for manufactur...
- Patent number 6,056,931
- Issue date May 2, 2000
- Komatsu Electronic Metal Co., Ltd.
- Toshiaki Saishoji
- C30 - CRYSTAL GROWTH
Information Patent Grant
Simple method for detecting temperature distributions in single cry...
- Patent number 6,042,646
- Issue date Mar 28, 2000
- Komatsu Electric Metals Co., Ltd.
- Fumitaka Ishikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of controlling defects of a silicon single crystal
- Patent number 5,948,159
- Issue date Sep 7, 1999
- Komatsu Electronic Metals Co., Ltd.
- Kozo Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for production of thin oxide superconducting film and substr...
- Patent number 5,413,986
- Issue date May 9, 1995
- Kabushiki Kaisha Komatsu Seisakusho
- Kozo Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Substrate of single crystal of oxide, device using said substrate a...
- Patent number 5,314,871
- Issue date May 24, 1994
- Kabushiki Kaisha Komatsu Seisakusho
- Kozo Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing monocrystals of oxide
- Patent number 5,259,919
- Issue date Nov 9, 1993
- Kabushiki Kaisha Komatsu Seisakusho
- Kozo Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Substrate of single crystal of oxide, superconductive device using...
- Patent number 5,240,902
- Issue date Aug 31, 1993
- Kabushiki Kaisha Komatsu Seisakusho
- Kozo Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Surface hardening thermal treatment
- Patent number 4,470,854
- Issue date Sep 11, 1984
- Kabushiki Kaisha Komatsu Seisakusho
- Kozo Nakamura
- C21 - METALLURGY OF IRON

Patents Applicationslast 30 patents

Information Patent Application
THERMAL PROCESSING METHOD FOR SILICON WAFER
- Publication number 20200181802
- Publication date Jun 11, 2020
- GLOBALWAFERS JAPAN CO., LTD.
- Susumu MAEDA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER
- Publication number 20190119828
- Publication date Apr 25, 2019
- GLOBALWAFERS JAPAN CO., LTD.
- Susumu MAEDA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER HEAT TREATMENT METHOD
- Publication number 20100075267
- Publication date Mar 25, 2010
- Shinya Sadohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR HEAT-TREATING SILICON WAFER
- Publication number 20100009548
- Publication date Jan 14, 2010
- SUMCO TECHXIV CORPORATION
- Kozo Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of predicting internal gettering behavior in silicon substra...
- Publication number 20090259448
- Publication date Oct 15, 2009
- Kozo Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for predicting precipitation behavior of oxygen in silicon s...
- Publication number 20090210166
- Publication date Aug 20, 2009
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Kozo Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Single Crystal Producing Method, Annealed Wafer, and Method...
- Publication number 20090061140
- Publication date Mar 5, 2009
- Sumco Techxiv Kabushiki Kaisha
- Shinya Sadohara
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon wafer, its manufacturing method, and its manufacturing appa...
- Publication number 20060016387
- Publication date Jan 26, 2006
- Takashi Yokoyama
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing silicon wafer
- Publication number 20060005762
- Publication date Jan 12, 2006
- Susumu Maeda
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing single-crystal semiconductor and apparatus fo...
- Publication number 20050139149
- Publication date Jun 30, 2005
- KOMATSU DENSHI KINZOKU KABUSHIKI KAISHA
- Susumu Maeda
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing silicon single crystal having no flaw
- Publication number 20030041796
- Publication date Mar 6, 2003
- Kozo Nakamura
- C30 - CRYSTAL GROWTH

Kozo Nakamura

Person

Patents Grantslast 30 patents

Thermal processing method for silicon wafer

Silicon wafer

Silicon wafer heat treatment method

Method for predicting precipitation behavior of oxygen in silicon s...

Method of predicting internal gettering behavior in silicon substra...

Silicon single crystal producing method, annealed wafer, and method...

Method for producing silicon wafer

Process for producing single-crystal semiconductor and apparatus fo...

Production method for silicon single crystal and production device...

Method for producing silicon single crystal having no flaw

Silicon wafer for hydrogen heat treatment and method for manufactur...

Method for manufacturing silicon single crystals and wafers adapted...

Silicon wafer for hydrogen heat treatment and method for manufactur...

Simple method for detecting temperature distributions in single cry...

Method of controlling defects of a silicon single crystal

Method for production of thin oxide superconducting film and substr...

Substrate of single crystal of oxide, device using said substrate a...

Method of manufacturing monocrystals of oxide

Substrate of single crystal of oxide, superconductive device using...

Surface hardening thermal treatment

Patents Applicationslast 30 patents

THERMAL PROCESSING METHOD FOR SILICON WAFER

SILICON WAFER

SILICON WAFER HEAT TREATMENT METHOD

METHOD FOR HEAT-TREATING SILICON WAFER

Method of predicting internal gettering behavior in silicon substra...

Method for predicting precipitation behavior of oxygen in silicon s...

Silicon Single Crystal Producing Method, Annealed Wafer, and Method...

Silicon wafer, its manufacturing method, and its manufacturing appa...

Method for producing silicon wafer

Process for producing single-crystal semiconductor and apparatus fo...

Method for producing silicon single crystal having no flaw