Krishna Bhuwalka

Person

Leuven, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Intra-band tunnel FET
- Patent number 9,711,632
- Issue date Jul 18, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Gerben Doornbos
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fin tunnel field effect transistor (FET)
- Patent number 9,614,049
- Issue date Apr 4, 2017
- Taiwan Semiconductor Manufacturing Company Limited
- Krishna Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with channel backside passivation layer device and method
- Patent number 9,412,871
- Issue date Aug 9, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructures for semiconductor devices and methods of forming t...
- Patent number 9,385,198
- Issue date Jul 5, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-threshold voltage devices and method of forming same
- Patent number 9,368,353
- Issue date Jun 14, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Krishna Kumar Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-threshold voltage FETs
- Patent number 9,337,109
- Issue date May 10, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric semiconductor device
- Patent number 9,231,102
- Issue date Jan 5, 2016
- Taiwan Semiconductor Manufacturing Company Limited
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-threshold voltage devices and method of forming same
- Patent number 9,093,273
- Issue date Jul 28, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Krishna Kumar Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunnel field effect transistor (FET)
- Patent number 8,916,927
- Issue date Dec 23, 2014
- Taiwan Semiconductor Manufacturing
- Krishna Bhuwalka
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Split-channel transistor and methods for forming the same
- Patent number 8,802,531
- Issue date Aug 12, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Krishna Kumar Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Multi-Gate Hybrid-Channel Field Effect Transistor
- Publication number 20250133763
- Publication date Apr 24, 2025
- Huawei Technologies Co., Ltd
- Yijian CHEN
Information Patent Application
SEMICONDUCTOR STRUCTURE FOR GATE ALL AROUND NANOSHEET DEVICE
- Publication number 20250120112
- Publication date Apr 10, 2025
- Huawei Technologies Co., Ltd
- Krishna Kumar Bhuwalka
Information Patent Application
METHOD FOR PRODUCING FET STRUCTURE
- Publication number 20250063806
- Publication date Feb 20, 2025
- Huawei Technologies Co., Ltd
- Yijian CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICE
- Publication number 20250048690
- Publication date Feb 6, 2025
- IMEC vzw
- Bilal CHEHAB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanostructure Comprising Nanosheet or Nanowire Transistors
- Publication number 20240371874
- Publication date Nov 7, 2024
- IMEC vzw
- Amita Rawat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARCHITECTURE AND METHOD OF MANUFACTURING SEMICONDUCTO...
- Publication number 20240250140
- Publication date Jul 25, 2024
- Huawei Technologies Co., Ltd
- Krishna Kumar Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple-Threshold Voltage Devices and Method of Forming Same
- Publication number 20150279679
- Publication date Oct 1, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Krishna Kumar Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC SEMICONDUCTOR DEVICE
- Publication number 20150061005
- Publication date Mar 5, 2015
- Taiwan Semiconductor Manufacturing Company Limited
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple-Threshold Voltage Devices and Method of Forming Same
- Publication number 20150054120
- Publication date Feb 26, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Krishna Kumar Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN TUNNEL FIELD EFFECT TRANSISTOR (FET)
- Publication number 20140374799
- Publication date Dec 25, 2014
- Krishna Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Threshold Voltage FETs
- Publication number 20140346564
- Publication date Nov 27, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Intra-Band Tunnel FET
- Publication number 20140264277
- Publication date Sep 18, 2014
- Taiwan Semiconductor Manufacturing Co., LTD
- Gerben Doornbos
- B82 - NANO-TECHNOLOGY
Information Patent Application
Heterostructures for Semiconductor Devices and Methods of Forming t...
- Publication number 20140264438
- Publication date Sep 18, 2014
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET with Channel Backside Passivation Layer Device and Method
- Publication number 20140252478
- Publication date Sep 11, 2014
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split-Channel Transistor and Methods for Forming the Same
- Publication number 20140065780
- Publication date Mar 6, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Krishna Kumar Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TUNNEL FIELD EFFECT TRANSISTOR (FET)
- Publication number 20140021532
- Publication date Jan 23, 2014
- Taiwan Semiconductor Manufacturing Company Limited
- Krishna Bhuwalka
- B82 - NANO-TECHNOLOGY

Krishna Bhuwalka

Person

Patents Grantslast 30 patents

Intra-band tunnel FET

Fin tunnel field effect transistor (FET)

FinFET with channel backside passivation layer device and method

Heterostructures for semiconductor devices and methods of forming t...

Multiple-threshold voltage devices and method of forming same

Multi-threshold voltage FETs

Asymmetric semiconductor device

Multiple-threshold voltage devices and method of forming same

Vertical tunnel field effect transistor (FET)

Split-channel transistor and methods for forming the same

Patents Applicationslast 30 patents

Multi-Gate Hybrid-Channel Field Effect Transistor

SEMICONDUCTOR STRUCTURE FOR GATE ALL AROUND NANOSHEET DEVICE

METHOD FOR PRODUCING FET STRUCTURE

A COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICE

Nanostructure Comprising Nanosheet or Nanowire Transistors

SEMICONDUCTOR ARCHITECTURE AND METHOD OF MANUFACTURING SEMICONDUCTO...

Multiple-Threshold Voltage Devices and Method of Forming Same

ASYMMETRIC SEMICONDUCTOR DEVICE

Multiple-Threshold Voltage Devices and Method of Forming Same

FIN TUNNEL FIELD EFFECT TRANSISTOR (FET)

Multi-Threshold Voltage FETs

Intra-Band Tunnel FET

Heterostructures for Semiconductor Devices and Methods of Forming t...

FinFET with Channel Backside Passivation Layer Device and Method

Split-Channel Transistor and Methods for Forming the Same

VERTICAL TUNNEL FIELD EFFECT TRANSISTOR (FET)