Krishna Kumar Bhuwalka

Person

Asansol, IN

People

Patents Grantslast 30 patents

Information Patent Grant
Heterostructures for semiconductor devices and methods of forming t...
- Patent number 10,164,024
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device channel system and method
- Patent number 10,050,111
- Issue date Aug 14, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin tunnel field effect transistor (FET)
- Patent number 10,014,395
- Issue date Jul 3, 2018
- Taiwan Semiconductor Manufacturing Company Limited
- Krishna Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming counterdoped semiconductor device comprising fir...
- Patent number 9,887,272
- Issue date Feb 6, 2018
- Taiwan Semiconductor Manufacturing Company Limited
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device channel system and method
- Patent number 9,735,239
- Issue date Aug 15, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid Fin field-effect transistors
- Patent number 8,723,223
- Issue date May 13, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Krishna Kumar Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel field-effect transistor with narrow band-gap channel and str...
- Patent number 8,697,510
- Issue date Apr 15, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Krishna Kumar Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mask-less and implant free formation of complementary tunnel field...
- Patent number 8,614,468
- Issue date Dec 24, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mark van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-channel transistor and methods for forming the same
- Patent number 8,604,518
- Issue date Dec 10, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Krishna Kumar Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel field-effect transistor with metal source
- Patent number 8,587,075
- Issue date Nov 19, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Krishna Kumar Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel FET and methods for forming the same
- Patent number 8,471,329
- Issue date Jun 25, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Krishna Kumar Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device Channel System and Method
- Publication number 20170365668
- Publication date Dec 21, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN TUNNEL FIELD EFFECT TRANSISTOR (FET)
- Publication number 20170207328
- Publication date Jul 20, 2017
- Taiwan Semiconductor Manufacturing Company Limited
- Krishna Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterostructures for Semiconductor Devices and Methods of Forming t...
- Publication number 20160300911
- Publication date Oct 13, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COUNTERDOPED SEMICONDUCTOR DEVICE
- Publication number 20160118475
- Publication date Apr 28, 2016
- Taiwan Semiconductor Manufacturing Company Limited
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Channel System and Method
- Publication number 20130270607
- Publication date Oct 17, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tunnel Field-Effect Transistor with Narrow Band-Gap Channel and Str...
- Publication number 20130137236
- Publication date May 30, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Krishna Kumar Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split-Channel Transistor and Methods for Forming the Same
- Publication number 20130134481
- Publication date May 30, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Krishna Kumar Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hybrid Fin Field-Effect Transistors
- Publication number 20130134522
- Publication date May 30, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Krishna Kumar Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tunnel FET and Methods for Forming the Same
- Publication number 20130119395
- Publication date May 16, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Krishna Kumar Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mask-less and Implant Free Formation of Complementary Tunnel Field...
- Publication number 20120319167
- Publication date Dec 20, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mark van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tunnel Field-Effect Transistor with Metal Source
- Publication number 20100123203
- Publication date May 20, 2010
- Krishna Kumar Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS

Krishna Kumar Bhuwalka

Person

Patents Grantslast 30 patents

Heterostructures for semiconductor devices and methods of forming t...

Semiconductor device channel system and method

Fin tunnel field effect transistor (FET)

Method for forming counterdoped semiconductor device comprising fir...

Semiconductor device channel system and method

Hybrid Fin field-effect transistors

Tunnel field-effect transistor with narrow band-gap channel and str...

Mask-less and implant free formation of complementary tunnel field...

Split-channel transistor and methods for forming the same

Tunnel field-effect transistor with metal source

Tunnel FET and methods for forming the same

Patents Applicationslast 30 patents

Semiconductor Device Channel System and Method

FIN TUNNEL FIELD EFFECT TRANSISTOR (FET)

Heterostructures for Semiconductor Devices and Methods of Forming t...

COUNTERDOPED SEMICONDUCTOR DEVICE

Semiconductor Device Channel System and Method

Tunnel Field-Effect Transistor with Narrow Band-Gap Channel and Str...

Split-Channel Transistor and Methods for Forming the Same

Hybrid Fin Field-Effect Transistors

Tunnel FET and Methods for Forming the Same

Mask-less and Implant Free Formation of Complementary Tunnel Field...

Tunnel Field-Effect Transistor with Metal Source