Kuan-Lin YEH

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Isolation structure for preventing unintentional merging of epitaxi...
- Patent number 12,300,698
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for isolating epitaxially grown source/drain re...
- Patent number 11,990,525
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate dielectric having a non-uniform thickness profile
- Patent number 11,521,971
- Issue date Dec 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pang-Hsuan Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for for isolating epitaxially grown source/drai...
- Patent number 11,349,002
- Issue date May 31, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for preventing unintentional merging of epitaxi...
- Patent number 11,315,924
- Issue date Apr 26, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method for fabricating the same
- Patent number 10,163,718
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Po-Hsueh Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method for fabricating the same
- Patent number 9,779,997
- Issue date Oct 3, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd
- Po-Hsueh Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ISOLATION STRUCTURE FOR ISOLATING EPITAXIALLY GROWN SOURCE/DRAIN RE...
- Publication number 20240313072
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR PREVENTING UNINTENTIONAL MERGING OF EPITAXI...
- Publication number 20230361124
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Dielectric Having A Non-Uniform Thickness Profile
- Publication number 20230102368
- Publication date Mar 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pang-Hsuan Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolation Structure For Isolating Epitaxially Grown Source/Drain Re...
- Publication number 20220293752
- Publication date Sep 15, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolation Structure For Preventing Unintentional Merging Of Epitaxi...
- Publication number 20220246613
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Dielectric Having a Non-Uniform Thickness Profile
- Publication number 20220157812
- Publication date May 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pang-Hsuan Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolation Structure for for Isolating Epitaxially Grown Source/Drai...
- Publication number 20220102509
- Publication date Mar 31, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolation Structure for Preventing Unintentional Merging of Epitaxi...
- Publication number 20210408000
- Publication date Dec 30, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20180012806
- Publication date Jan 11, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Po-Hsueh LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20170194209
- Publication date Jul 6, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Po-Hsueh LI
- H01 - BASIC ELECTRIC ELEMENTS

Kuan-Lin YEH

Person

Patents Grantslast 30 patents

Isolation structure for preventing unintentional merging of epitaxi...

Isolation structure for isolating epitaxially grown source/drain re...

Gate dielectric having a non-uniform thickness profile

Isolation structure for for isolating epitaxially grown source/drai...

Isolation structure for preventing unintentional merging of epitaxi...

Semiconductor device and a method for fabricating the same

Semiconductor device and a method for fabricating the same

Patents Applicationslast 30 patents

ISOLATION STRUCTURE FOR ISOLATING EPITAXIALLY GROWN SOURCE/DRAIN RE...

ISOLATION STRUCTURE FOR PREVENTING UNINTENTIONAL MERGING OF EPITAXI...

Gate Dielectric Having A Non-Uniform Thickness Profile

Isolation Structure For Isolating Epitaxially Grown Source/Drain Re...

Isolation Structure For Preventing Unintentional Merging Of Epitaxi...

Gate Dielectric Having a Non-Uniform Thickness Profile

Isolation Structure for for Isolating Epitaxially Grown Source/Drai...

Isolation Structure for Preventing Unintentional Merging of Epitaxi...

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME