Kui Pu

Person

Chengdu, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Split gate power device and its method of fabrication
- Patent number 11,289,596
- Issue date Mar 29, 2022
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOS-gated device with high dopant concentration N-we...
- Patent number 10,157,983
- Issue date Dec 18, 2018
- MaxPower Semiconductor Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET having lateral channel, vertical current path, and P-r...
- Patent number 9,947,779
- Issue date Apr 17, 2018
- MaxPower Semiconductor Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET having planar channel, vertical current path, and top...
- Patent number 9,761,702
- Issue date Sep 12, 2017
- MaxPower Semiconductor
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOSFET having planar channel and its method of fabri...
- Patent number 9,461,127
- Issue date Oct 4, 2016
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOSFET having planar channel and its method of fabri...
- Patent number 9,184,248
- Issue date Nov 10, 2015
- MaxPower Semiconductor Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOSFET with planar channel and vertical field plate
- Patent number 9,093,522
- Issue date Jul 28, 2015
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SPLIT GATE POWER DEVICE AND ITS METHOD OF FABRICATION
- Publication number 20200273987
- Publication date Aug 27, 2020
- MAXPOWER SEMICONDUCTOR INC.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER MOS-GATED DEVICE WITH HIGH DOPANT CONCENTRATION N-WE...
- Publication number 20180261666
- Publication date Sep 13, 2018
- MAXPOWER SEMICONDUCTOR INC.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOSFET HAVING PLANAR CHANNEL, VERTICAL CURRENT PATH, AND TOP...
- Publication number 20170330962
- Publication date Nov 16, 2017
- MAXPOWER SEMICONDUCTOR INC.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOSFET HAVING PLANAR CHANNEL, VERTICAL CURRENT PATH, AND TOP...
- Publication number 20160359029
- Publication date Dec 8, 2016
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER MOSFET HAVING PLANAR CHANNEL AND ITS METHOD OF FABRI...
- Publication number 20160027880
- Publication date Jan 28, 2016
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER MOSFET INCLUDING PLANAR CHANNEL AND VERTICAL FIELD
- Publication number 20150221765
- Publication date Aug 6, 2015
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER MOSFET HAVING PLANAR CHANNEL AND ITS METHOD OF FABRI...
- Publication number 20150221731
- Publication date Aug 6, 2015
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Split gate power device and its method of fabrication

Vertical power MOS-gated device with high dopant concentration N-we...

Power MOSFET having lateral channel, vertical current path, and P-r...

Power MOSFET having planar channel, vertical current path, and top...

Vertical power MOSFET having planar channel and its method of fabri...

Vertical power MOSFET having planar channel and its method of fabri...

Vertical power MOSFET with planar channel and vertical field plate

Patents Applicationslast 30 patents

SPLIT GATE POWER DEVICE AND ITS METHOD OF FABRICATION

VERTICAL POWER MOS-GATED DEVICE WITH HIGH DOPANT CONCENTRATION N-WE...

POWER MOSFET HAVING PLANAR CHANNEL, VERTICAL CURRENT PATH, AND TOP...

POWER MOSFET HAVING PLANAR CHANNEL, VERTICAL CURRENT PATH, AND TOP...

VERTICAL POWER MOSFET HAVING PLANAR CHANNEL AND ITS METHOD OF FABRI...

VERTICAL POWER MOSFET INCLUDING PLANAR CHANNEL AND VERTICAL FIELD

VERTICAL POWER MOSFET HAVING PLANAR CHANNEL AND ITS METHOD OF FABRI...