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Kumiko Murayama
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Niigata, JP
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last 30 patents
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Patent Grant
Method of manufacturing single crystal silicon wafer from ingot gro...
Patent number
8,476,149
Issue date
Jul 2, 2013
Global Wafers Japan Co., Ltd.
Hiromichi Isogai
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for heat treating a silicon wafer
Patent number
8,399,341
Issue date
Mar 19, 2013
Covalent Materials Corporation
Takeshi Senda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of heat treating silicon wafer
Patent number
8,252,700
Issue date
Aug 28, 2012
Covalent Materials Corporation
Takeshi Senda
C30 - CRYSTAL GROWTH
Information
Patent Grant
Manufacturing method for silicon wafer
Patent number
7,977,219
Issue date
Jul 12, 2011
Covalent Materials Corporation
Hiromichi Isogai
C30 - CRYSTAL GROWTH
Patents Applications
last 30 patents
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Patent Application
METHOD FOR HEAT TREATING A SILICON WAFER
Publication number
20120184091
Publication date
Jul 19, 2012
Covalent Materials Corporation
Takeshi Senda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of heat treating silicon wafer
Publication number
20100197146
Publication date
Aug 5, 2010
COVALENT MATERIALS CORPORATION
Takeshi Senda
C30 - CRYSTAL GROWTH
Information
Patent Application
MANUFACTURING METHOD FOR SILICON WAFER
Publication number
20100055884
Publication date
Mar 4, 2010
COVALENT MATERIALS CORPORATION
Hiromichi Isogai
C30 - CRYSTAL GROWTH
Information
Patent Application
SILICON WAFER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR HEA...
Publication number
20100038757
Publication date
Feb 18, 2010
COVALENT MATERIALS CORPORATION
Hiromichi Isogai
C30 - CRYSTAL GROWTH