Kun ZHANG

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory devices having a support stack comprising...
- Patent number 12,369,317
- Issue date Jul 22, 2025
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional culture method for large-scale preparation of ste...
- Patent number 12,338,461
- Issue date Jun 24, 2025
- Beijing CytoNiche Biotechnology Co., Ltd.
- Xiaojun Yan
- C12 - BIOCHEMISTRY BEER SPIRITS WINE VINEGAR MICROBIOLOGY ENZYMOLOGY MUTATION...
Information Patent Grant
Vertical memory devices and methods for operating the same
- Patent number 12,327,592
- Issue date Jun 10, 2025
- Yangtze Memory Technologies Co., Ltd.
- DongXue Zhao
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for thermal treatment of a semiconductor layer in semicondu...
- Patent number 12,322,596
- Issue date Jun 3, 2025
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and fabrication method thereof
- Patent number 12,315,802
- Issue date May 27, 2025
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,310,011
- Issue date May 20, 2025
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,300,648
- Issue date May 13, 2025
- Yangtze Memory Technologies Co., Ltd.
- Yuancheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory and manufacturing method thereof
- Patent number 12,302,558
- Issue date May 13, 2025
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
Information Patent Grant
Three-dimensional memory device with backside interconnect structures
- Patent number 12,302,573
- Issue date May 13, 2025
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,295,139
- Issue date May 6, 2025
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
Information Patent Grant
Three-dimensional NAND memory and fabrication method thereof
- Patent number 12,283,322
- Issue date Apr 22, 2025
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices with supporting structure for stai...
- Patent number 12,279,429
- Issue date Apr 15, 2025
- Yangtze Memory Technologies Co., Ltd.
- Cuicui Kong
Information Patent Grant
Peripheral circuit having recess gate transistors and method for fo...
- Patent number 12,278,209
- Issue date Apr 15, 2025
- Yangtze Memory Technologies Co., Ltd.
- Yanwei Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 12,272,645
- Issue date Apr 8, 2025
- Yangtze Memory Technologies Co., Ltd.
- Lei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic flash memory (DFM) with multi-cells
- Patent number 12,262,533
- Issue date Mar 25, 2025
- Yangtze Memory Technologies Co., Ltd.
- Tao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices with improved back-side channel st...
- Patent number 12,256,540
- Issue date Mar 18, 2025
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
Information Patent Grant
Methods for forming three-dimensional memory devices
- Patent number 12,255,181
- Issue date Mar 18, 2025
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory devices and data erasing methods
- Patent number 12,205,649
- Issue date Jan 21, 2025
- Yangtze Memory Technologies Co., Ltd.
- Tao Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,176,309
- Issue date Dec 24, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yanhong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,170,257
- Issue date Dec 17, 2024
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having a conductive layer stacking with an in...
- Patent number 12,136,586
- Issue date Nov 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with backside source contact
- Patent number 12,136,618
- Issue date Nov 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices
- Patent number 12,114,498
- Issue date Oct 8, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,113,037
- Issue date Oct 8, 2024
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for recovering valuable metals from spent lithium ion batteries
- Patent number 12,113,187
- Issue date Oct 8, 2024
- GEM CO., LTD.
- Kaihua Xu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Peripheral circuit having recess gate transistors and method for fo...
- Patent number 12,089,413
- Issue date Sep 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yanwei Shi
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device with backside interconnect structures
- Patent number 12,082,411
- Issue date Sep 3, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,069,854
- Issue date Aug 20, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,058,858
- Issue date Aug 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming contact structures and semiconductor devices in...
- Patent number 12,057,372
- Issue date Aug 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20250227928
- Publication date Jul 10, 2025
- Yangtze Memory Technologies Co., Ltd.
- Kun ZHANG
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE INTERCONNECT STRUCTURES
- Publication number 20250220908
- Publication date Jul 3, 2025
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH SUPPORTING STRUCTURE FOR STAI...
- Publication number 20250212407
- Publication date Jun 26, 2025
- Yangtze Memory Technologies Co., Ltd.
- Cuicui Kong
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY AND FABRICATION METHOD THEREOF
- Publication number 20250201308
- Publication date Jun 19, 2025
- Yangtze Memory Technologies Co., Ltd.
- Linchun WU
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20250194087
- Publication date Jun 12, 2025
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
Information Patent Application
THERMAL MANAGEMENT SYSTEM, ENERGY STORAGE DEVICE, AND PHOTOVOLTAIC...
- Publication number 20250185213
- Publication date Jun 5, 2025
- Huawei Digital Power Technologies Co., Ltd.
- Tao HUANG
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
CATHODE MATERIAL FOR SODIUM-ION BATTERIES, PREPARATION METHOD THERE...
- Publication number 20250145492
- Publication date May 8, 2025
- JINGMEN GEM CO., LTD.
- Kaihua XU
- C01 - INORGANIC CHEMISTRY
Information Patent Application
NON-VOLATILE MEMORY DEVICES AND DATA ERASING METHODS
- Publication number 20250111880
- Publication date Apr 3, 2025
- Yangtze Memory Technologies Co., Ltd.
- Tao YANG
- G11 - INFORMATION STORAGE
Information Patent Application
CORE-SHELL GRADIENT TERNARY PRECURSOR AND PREPARATION METHOD AND AP...
- Publication number 20250083974
- Publication date Mar 13, 2025
- JINGMEN GEM CO., LTD
- Kaihua XU
- C01 - INORGANIC CHEMISTRY
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20250070066
- Publication date Feb 27, 2025
- Yangtze Memory Technologies Co., Ltd.
- Yanhong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE SOURCE CONTACT
- Publication number 20250029972
- Publication date Jan 23, 2025
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY AND FABRICATION METHOD THEREOF, MEMORY SYS...
- Publication number 20240431100
- Publication date Dec 26, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POSITIVE ELECTRODE MATERIAL PRECURSOR AND POSITIVE ELECTRODE MATERI...
- Publication number 20240421290
- Publication date Dec 19, 2024
- JINGMEN GEM CO., LTD.
- Kaihua XU
- C01 - INORGANIC CHEMISTRY
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20240422981
- Publication date Dec 19, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND FORMATION METHOD THEREOF
- Publication number 20240407167
- Publication date Dec 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD, AND MEMORY SYSTEM
- Publication number 20240387402
- Publication date Nov 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wei XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERIPHERAL CIRCUIT HAVING RECESS GATE TRANSISTORS AND METHOD FOR FO...
- Publication number 20240389331
- Publication date Nov 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yanwei Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES, FABRICATION METHODS OF SEMICONDUCTOR DEVICES...
- Publication number 20240387408
- Publication date Nov 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wei Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY AN...
- Publication number 20240381642
- Publication date Nov 14, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wei Xie
Information Patent Application
STAIRCASE CONNECTION STRUCTURE FOR THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20240355734
- Publication date Oct 24, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
PYRROLYLACYLPIPERIDYLAMINE COMPOUND AND USE THEREOF
- Publication number 20240351999
- Publication date Oct 24, 2024
- INSTITUTE OF MATERIA MEDICA ,CHINESE ACADEMY OF MEDICAL SCIENCES
- Song WU
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Application
MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240339402
- Publication date Oct 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE INTERCONNECT STRUCTURES
- Publication number 20240341096
- Publication date Oct 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240334690
- Publication date Oct 3, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun ZHANG
Information Patent Application
VERTICAL MEMORY DEVICES AND METHODS FOR OPERATING THE SAME
- Publication number 20240282376
- Publication date Aug 22, 2024
- Yangtze Memory Technologies Co., Ltd.
- DongXue ZHAO
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR FORMING CONTACT STRUCTURES AND SEMICONDUCTOR DEVICES TH...
- Publication number 20240282673
- Publication date Aug 22, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES
- Publication number 20240250050
- Publication date Jul 25, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240212753
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240215273
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yuancheng Yang
Information Patent Application
MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240215234
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Three-dimensional memory devices having a support stack comprising...

Three-dimensional culture method for large-scale preparation of ste...

Vertical memory devices and methods for operating the same

Methods for thermal treatment of a semiconductor layer in semicondu...

Memory device and fabrication method thereof

Three-dimensional memory devices and methods for forming the same

Three-dimensional memory devices and methods for forming the same

Three-dimensional memory and manufacturing method thereof

Three-dimensional memory device with backside interconnect structures

Three-dimensional memory devices and methods for forming the same

Three-dimensional NAND memory and fabrication method thereof

Three-dimensional memory devices with supporting structure for stai...

Peripheral circuit having recess gate transistors and method for fo...

Three-dimensional memory devices and fabricating methods thereof

Dynamic flash memory (DFM) with multi-cells

Three-dimensional memory devices with improved back-side channel st...

Methods for forming three-dimensional memory devices

Non-volatile memory devices and data erasing methods

Three-dimensional memory devices and methods for forming the same

Three-dimensional memory devices and methods for forming the same

Semiconductor devices having a conductive layer stacking with an in...

Three-dimensional memory device with backside source contact

Three-dimensional memory devices

Three-dimensional memory devices and methods for forming the same

Method for recovering valuable metals from spent lithium ion batteries

Peripheral circuit having recess gate transistors and method for fo...

Three-dimensional memory device with backside interconnect structures

Three-dimensional memory devices and methods for forming the same

Three-dimensional memory devices and methods for forming the same

Methods for forming contact structures and semiconductor devices in...

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE INTERCONNECT STRUCTURES

THREE-DIMENSIONAL MEMORY DEVICES WITH SUPPORTING STRUCTURE FOR STAI...

THREE-DIMENSIONAL NAND MEMORY AND FABRICATION METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THERMAL MANAGEMENT SYSTEM, ENERGY STORAGE DEVICE, AND PHOTOVOLTAIC...

CATHODE MATERIAL FOR SODIUM-ION BATTERIES, PREPARATION METHOD THERE...

NON-VOLATILE MEMORY DEVICES AND DATA ERASING METHODS

CORE-SHELL GRADIENT TERNARY PRECURSOR AND PREPARATION METHOD AND AP...

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE SOURCE CONTACT

THREE-DIMENSIONAL MEMORY AND FABRICATION METHOD THEREOF, MEMORY SYS...

POSITIVE ELECTRODE MATERIAL PRECURSOR AND POSITIVE ELECTRODE MATERI...

THREE-DIMENSIONAL MEMORY DEVICES

THREE-DIMENSIONAL MEMORY DEVICE AND FORMATION METHOD THEREOF

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD, AND MEMORY SYSTEM

PERIPHERAL CIRCUIT HAVING RECESS GATE TRANSISTORS AND METHOD FOR FO...

SEMICONDUCTOR DEVICES, FABRICATION METHODS OF SEMICONDUCTOR DEVICES...

SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY AN...

STAIRCASE CONNECTION STRUCTURE FOR THREE-DIMENSIONAL MEMORY DEVICES

PYRROLYLACYLPIPERIDYLAMINE COMPOUND AND USE THEREOF

MEMORY DEVICE AND FABRICATION METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE INTERCONNECT STRUCTURES

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

VERTICAL MEMORY DEVICES AND METHODS FOR OPERATING THE SAME

METHODS FOR FORMING CONTACT STRUCTURES AND SEMICONDUCTOR DEVICES TH...

VERTICAL MEMORY DEVICES

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

MEMORY DEVICES AND METHODS FOR FORMING THE SAME