Kun ZHANG

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Non-volatile memory devices and data erasing methods
- Patent number 12,205,649
- Issue date Jan 21, 2025
- Yangtze Memory Technologies Co., Ltd.
- Tao Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,176,309
- Issue date Dec 24, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yanhong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,170,257
- Issue date Dec 17, 2024
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having a conductive layer stacking with an in...
- Patent number 12,136,586
- Issue date Nov 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with backside source contact
- Patent number 12,136,618
- Issue date Nov 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices
- Patent number 12,114,498
- Issue date Oct 8, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,113,037
- Issue date Oct 8, 2024
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for recovering valuable metals from spent lithium ion batteries
- Patent number 12,113,187
- Issue date Oct 8, 2024
- GEM CO., LTD.
- Kaihua Xu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Peripheral circuit having recess gate transistors and method for fo...
- Patent number 12,089,413
- Issue date Sep 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yanwei Shi
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device with backside interconnect structures
- Patent number 12,082,411
- Issue date Sep 3, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,069,854
- Issue date Aug 20, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,058,858
- Issue date Aug 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming contact structures and semiconductor devices in...
- Patent number 12,057,372
- Issue date Aug 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming three-dimensional memory devices with backside...
- Patent number 12,048,151
- Issue date Jul 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,048,148
- Issue date Jul 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
Information Patent Grant
Vertical memory devices and methods for operating the same
- Patent number 12,027,207
- Issue date Jul 2, 2024
- Yangtze Memory Technologies Co., Ltd.
- DongXue Zhao
- G11 - INFORMATION STORAGE
Information Patent Grant
Ternary positive electrode material coated with nitride/graphitized...
- Patent number 12,027,696
- Issue date Jul 2, 2024
- GEM CO., LTD.
- Kaihua Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local contacts of three-dimensional memory devices and methods for...
- Patent number 12,022,656
- Issue date Jun 25, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jianzhong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices with stabilization structures betw...
- Patent number 12,010,834
- Issue date Jun 11, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 11,996,152
- Issue date May 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Recombinant varicella-zoster virus (VZV) vaccine
- Patent number 11,993,634
- Issue date May 28, 2024
- BEIJING LUZHU BIOTECHNOLOGY CO., LTD.
- Jian Kong
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
Three-dimensional memory device and fabrication method thereof
- Patent number 11,978,737
- Issue date May 7, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming three-dimensional memory devices with backside...
- Patent number 11,963,349
- Issue date Apr 16, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
Information Patent Grant
Vertical memory devices
- Patent number 11,948,901
- Issue date Apr 2, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for processing map information, and storage me...
- Patent number 11,934,449
- Issue date Mar 19, 2024
- BEIJING BAIDU NETCOM SCIENCE TECHNOLOGY CO., LTD.
- Jia Zhao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Three-dimensional memory devices having polysilicon layer and bonde...
- Patent number 11,935,596
- Issue date Mar 19, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yanhong Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 11,935,862
- Issue date Mar 19, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Synchronization instruction insertion method and apparatus
- Patent number 11,934,832
- Issue date Mar 19, 2024
- Huawei Technologies Co., Ltd.
- Xiong Gao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Three-dimensional memory devices and memory system
- Patent number 11,929,119
- Issue date Mar 12, 2024
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Contact structures for three-dimensional memory device
- Patent number 11,910,599
- Issue date Feb 20, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE SOURCE CONTACT
- Publication number 20250029972
- Publication date Jan 23, 2025
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY AND FABRICATION METHOD THEREOF, MEMORY SYS...
- Publication number 20240431100
- Publication date Dec 26, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20240422981
- Publication date Dec 19, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND FORMATION METHOD THEREOF
- Publication number 20240407167
- Publication date Dec 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERIPHERAL CIRCUIT HAVING RECESS GATE TRANSISTORS AND METHOD FOR FO...
- Publication number 20240389331
- Publication date Nov 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yanwei Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD, AND MEMORY SYSTEM
- Publication number 20240387402
- Publication date Nov 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wei XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES, FABRICATION METHODS OF SEMICONDUCTOR DEVICES...
- Publication number 20240387408
- Publication date Nov 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wei Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY AN...
- Publication number 20240381642
- Publication date Nov 14, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wei Xie
Information Patent Application
STAIRCASE CONNECTION STRUCTURE FOR THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20240355734
- Publication date Oct 24, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
PYRROLYLACYLPIPERIDYLAMINE COMPOUND AND USE THEREOF
- Publication number 20240351999
- Publication date Oct 24, 2024
- INSTITUTE OF MATERIA MEDICA ,CHINESE ACADEMY OF MEDICAL SCIENCES
- Song WU
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Application
MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240339402
- Publication date Oct 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE INTERCONNECT STRUCTURES
- Publication number 20240341096
- Publication date Oct 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240334690
- Publication date Oct 3, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun ZHANG
Information Patent Application
VERTICAL MEMORY DEVICES AND METHODS FOR OPERATING THE SAME
- Publication number 20240282376
- Publication date Aug 22, 2024
- Yangtze Memory Technologies Co., Ltd.
- DongXue ZHAO
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR FORMING CONTACT STRUCTURES AND SEMICONDUCTOR DEVICES TH...
- Publication number 20240282673
- Publication date Aug 22, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES
- Publication number 20240250050
- Publication date Jul 25, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240212753
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240215273
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yuancheng Yang
Information Patent Application
MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240215234
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE LINE STRUCTURE TO REDUCE WAFER BOW
- Publication number 20240215239
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Shuangshuang WU
Information Patent Application
MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240215235
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240215272
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240215271
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240206148
- Publication date Jun 20, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240206181
- Publication date Jun 20, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240188292
- Publication date Jun 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Cuicui Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD FOR IMPROVED...
- Publication number 20240179901
- Publication date May 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240170424
- Publication date May 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-NICKEL TERNARY CORE-SHELL PRECURSOR, POSITIVE ELECTRODE MATERI...
- Publication number 20240166533
- Publication date May 23, 2024
- JINGMEN GEM CO., LTD
- Kaihua XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240170425
- Publication date May 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Non-volatile memory devices and data erasing methods

Three-dimensional memory devices and methods for forming the same

Three-dimensional memory devices and methods for forming the same

Semiconductor devices having a conductive layer stacking with an in...

Three-dimensional memory device with backside source contact

Three-dimensional memory devices

Three-dimensional memory devices and methods for forming the same

Method for recovering valuable metals from spent lithium ion batteries

Peripheral circuit having recess gate transistors and method for fo...

Three-dimensional memory device with backside interconnect structures

Three-dimensional memory devices and methods for forming the same

Three-dimensional memory devices and methods for forming the same

Methods for forming contact structures and semiconductor devices in...

Methods for forming three-dimensional memory devices with backside...

Three-dimensional memory devices and methods for forming the same

Vertical memory devices and methods for operating the same

Ternary positive electrode material coated with nitride/graphitized...

Local contacts of three-dimensional memory devices and methods for...

Three-dimensional memory devices with stabilization structures betw...

Three-dimensional memory devices and methods for forming the same

Recombinant varicella-zoster virus (VZV) vaccine

Three-dimensional memory device and fabrication method thereof

Methods for forming three-dimensional memory devices with backside...

Vertical memory devices

Method and apparatus for processing map information, and storage me...

Three-dimensional memory devices having polysilicon layer and bonde...

Three-dimensional memory devices and methods for forming the same

Synchronization instruction insertion method and apparatus

Three-dimensional memory devices and memory system

Contact structures for three-dimensional memory device

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE SOURCE CONTACT

THREE-DIMENSIONAL MEMORY AND FABRICATION METHOD THEREOF, MEMORY SYS...

THREE-DIMENSIONAL MEMORY DEVICES

THREE-DIMENSIONAL MEMORY DEVICE AND FORMATION METHOD THEREOF

PERIPHERAL CIRCUIT HAVING RECESS GATE TRANSISTORS AND METHOD FOR FO...

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD, AND MEMORY SYSTEM

SEMICONDUCTOR DEVICES, FABRICATION METHODS OF SEMICONDUCTOR DEVICES...

SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY AN...

STAIRCASE CONNECTION STRUCTURE FOR THREE-DIMENSIONAL MEMORY DEVICES

PYRROLYLACYLPIPERIDYLAMINE COMPOUND AND USE THEREOF

MEMORY DEVICE AND FABRICATION METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE INTERCONNECT STRUCTURES

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

VERTICAL MEMORY DEVICES AND METHODS FOR OPERATING THE SAME

METHODS FOR FORMING CONTACT STRUCTURES AND SEMICONDUCTOR DEVICES TH...

VERTICAL MEMORY DEVICES

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

MEMORY DEVICES AND METHODS FOR FORMING THE SAME

GATE LINE STRUCTURE TO REDUCE WAFER BOW

MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

MEMORY DEVICES AND METHODS FOR FORMING THE SAME

MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD FOR IMPROVED...

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

HIGH-NICKEL TERNARY CORE-SHELL PRECURSOR, POSITIVE ELECTRODE MATERI...

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF