Kuniaki Yagi

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor substrate, semiconductor element and method for produ...
- Patent number 11,264,241
- Issue date Mar 1, 2022
- Tamura Corporation
- Akito Kuramata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polycrystalline SiC substrate and method for manufacturing same
- Patent number 10,934,634
- Issue date Mar 2, 2021
- SICOXS CORPORATION
- Kuniaki Yagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate and method for manufacturing semiconductor...
- Patent number 9,773,678
- Issue date Sep 26, 2017
- Kabushiki Kaisha Toyota Jidoshokki
- Ko Imaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor substrate
- Patent number 9,761,479
- Issue date Sep 12, 2017
- Kabushiki Kaisha Toyota Jidoshokki
- Ko Imaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate, semiconductor device and method for manu...
- Patent number 8,890,170
- Issue date Nov 18, 2014
- Hoya Corporation
- Hiroyuki Nagasawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing silicon carbide single crystal
- Patent number 8,133,321
- Issue date Mar 13, 2012
- Hoya Corporation
- Takamitsu Kawahara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Compound crystal and method of manufacturing same
- Patent number 7,211,337
- Issue date May 1, 2007
- Hoya Corporation
- Hiroyuki Nagasawa
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing compound single crystal
- Patent number 7,101,774
- Issue date Sep 5, 2006
- Hoya Corporation
- Hiroyuki Nagasawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon carbide, silicon carbide, composite...
- Patent number 6,821,340
- Issue date Nov 23, 2004
- Hoya Corporation
- Hiroyuki Nagasawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing compound single crystal
- Patent number 6,736,894
- Issue date May 18, 2004
- Hoya Corporation
- Takamitsu Kawahara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Compound crystal and method of manufacturing same
- Patent number 6,703,288
- Issue date Mar 9, 2004
- Hoya Corporation
- Hiroyuki Nagasawa
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon carbide and method for producing the same
- Patent number 6,596,080
- Issue date Jul 22, 2003
- Hoya Corporation
- Takamitsu Kawahara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide film and method for manufacturing the same
- Patent number 6,475,456
- Issue date Nov 5, 2002
- Hoya Corporation
- Yukitaka Nakano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide film and method for manufacturing the same
- Patent number 6,416,578
- Issue date Jul 9, 2002
- Hoya Corporation
- Yukitaka Nakano
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR ELEMENT AND METHOD FOR PRODU...
- Publication number 20200168460
- Publication date May 28, 2020
- TAMURA CORPORATION
- Akito KURAMATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYCRYSTALLINE SiC SUBSTRATE AND METHOD FOR MANUFACTURING SAME
- Publication number 20190153616
- Publication date May 23, 2019
- SICOXS CORPORATION
- Kuniaki YAGI
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...
- Publication number 20170213735
- Publication date Jul 27, 2017
- Kabushiki Kaisha Toyota Jidoshokki
- Ko IMAOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR SEMICONDUCTOR SUBSTRATE
- Publication number 20160204023
- Publication date Jul 14, 2016
- KABUSHIKI KAISHA TOYOTA JIDOSHOKKI
- Ko IMAOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD FOR MANU...
- Publication number 20130234164
- Publication date Sep 12, 2013
- HOYA CORPORATION
- Hiroyuki Nagasawa
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE
- Publication number 20130228797
- Publication date Sep 5, 2013
- HOYA CORPORATION
- Hiroyuki Nagasawa
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOUND SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME
- Publication number 20110089431
- Publication date Apr 21, 2011
- HOYA CORPORATION
- Kuniaki YAGI
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for Producing Silicon Carbide Single Crystal
- Publication number 20080289570
- Publication date Nov 27, 2008
- HOYA CORPORATION
- Takamitsu Kawahara
- C30 - CRYSTAL GROWTH
Information Patent Application
Compound crystal and method of manufacturing same
- Publication number 20040127042
- Publication date Jul 1, 2004
- HOYA CORPORATION
- Hiroyuki Nagasawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of manufacturing single crystal substrate
- Publication number 20030056718
- Publication date Mar 27, 2003
- HOYA CORPORATION
- Takamitsu Kawahara
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of manufacturing compound single crystal
- Publication number 20030047129
- Publication date Mar 13, 2003
- HOYA CORPORATION
- Takamitsu Kawahara
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of manufacturing compound single crystal
- Publication number 20030045102
- Publication date Mar 6, 2003
- HOYA CORPORATION
- Hiroyuki Nagasawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Compound crystal and method of manufacturing same
- Publication number 20030040167
- Publication date Feb 27, 2003
- Hiroyuki Nagasawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon carbide film and method for manufacturing the same
- Publication number 20020124793
- Publication date Sep 12, 2002
- Hoya Corporation
- Yukitaka Nakano
- C30 - CRYSTAL GROWTH
Information Patent Application
Single crystal SiCand method of producing the same as well as SiC s...
- Publication number 20020096104
- Publication date Jul 25, 2002
- Hoya Corporation
- Kuniaki Yagi
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of manufacturing silicon carbide, silicon carbide, composite...
- Publication number 20020072249
- Publication date Jun 13, 2002
- HOYA CORPORATION
- Hiroyuki Nagasawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon carbide film and method for manufacturing the same
- Publication number 20020035960
- Publication date Mar 28, 2002
- Yukitaka Nakano
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Silicon carbide and method for producing the same
- Publication number 20020014198
- Publication date Feb 7, 2002
- HOYA CORPORATION
- Takamitsu Kawahara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Kuniaki Yagi

Person

Patents Grantslast 30 patents

Semiconductor substrate, semiconductor element and method for produ...

Polycrystalline SiC substrate and method for manufacturing same

Semiconductor substrate and method for manufacturing semiconductor...

Manufacturing method for semiconductor substrate

Silicon carbide substrate, semiconductor device and method for manu...

Process for producing silicon carbide single crystal

Compound crystal and method of manufacturing same

Method of manufacturing compound single crystal

Method of manufacturing silicon carbide, silicon carbide, composite...

Method of manufacturing compound single crystal

Compound crystal and method of manufacturing same

Silicon carbide and method for producing the same

Silicon carbide film and method for manufacturing the same

Silicon carbide film and method for manufacturing the same

Patents Applicationslast 30 patents

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR ELEMENT AND METHOD FOR PRODU...

POLYCRYSTALLINE SiC SUBSTRATE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...

MANUFACTURING METHOD FOR SEMICONDUCTOR SUBSTRATE

SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD FOR MANU...

SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE

COMPOUND SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME

Process for Producing Silicon Carbide Single Crystal

Compound crystal and method of manufacturing same

Method of manufacturing single crystal substrate

Method of manufacturing compound single crystal

Method of manufacturing compound single crystal

Compound crystal and method of manufacturing same

Silicon carbide film and method for manufacturing the same

Single crystal SiCand method of producing the same as well as SiC s...

Method of manufacturing silicon carbide, silicon carbide, composite...

Silicon carbide film and method for manufacturing the same

Silicon carbide and method for producing the same