Kunihiro Fujii

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Process for fabricating semiconductor device without separation bet...
- Patent number 6,228,766
- Issue date May 8, 2001
- NEC Corporation
- Kunihiro Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
C49-structured tungsten-containing titanium salicide structure and...
- Patent number 6,114,765
- Issue date Sep 5, 2000
- NEC Corporation
- Kunihiro Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming C49-structure tungsten-containing titanium salici...
- Patent number 6,069,045
- Issue date May 30, 2000
- NEC Corporation
- Kunihiro Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of selectively producing refractory metal silicide uniform...
- Patent number 6,033,978
- Issue date Mar 7, 2000
- NEC Corporation
- Kunihiro Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and process for production thereof
- Patent number 6,005,291
- Issue date Dec 21, 1999
- NEC Corporation
- Kenichi Koyanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device having source/drain laye...
- Patent number 5,946,578
- Issue date Aug 31, 1999
- NEC Corporation
- Kunihiro Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
C49-structured tungsten-containing titanium salicide structure
- Patent number 5,880,505
- Issue date Mar 9, 1999
- NEC Corporation
- Kunihiro Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device having titanium silicid...
- Patent number 5,776,822
- Issue date Jul 7, 1998
- NEC Corporation
- Kunihiro Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process for semiconductor device having MOS type field...
- Patent number 5,741,725
- Issue date Apr 21, 1998
- NEC Corporation
- Ken Inoue
- H01 - BASIC ELECTRIC ELEMENTS

Kunihiro Fujii

Person

Patents Grantslast 30 patents

Process for fabricating semiconductor device without separation bet...

C49-structured tungsten-containing titanium salicide structure and...

Method of forming C49-structure tungsten-containing titanium salici...

Process of selectively producing refractory metal silicide uniform...

Semiconductor device and process for production thereof

Method of fabricating semiconductor device having source/drain laye...

C49-structured tungsten-containing titanium salicide structure

Method for fabricating semiconductor device having titanium silicid...

Fabrication process for semiconductor device having MOS type field...