Kunimasa Takahashi

Person

Ami, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor light emitting element
- Patent number 11,070,028
- Issue date Jul 20, 2021
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Toru Takayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor light-emitting element and light source inclu...
- Patent number 9,147,804
- Issue date Sep 29, 2015
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Ryou Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor element and method for fabricating th...
- Patent number 9,018,699
- Issue date Apr 28, 2015
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Tsutomu Kiyosawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor light-emitting element including Si-doped lay...
- Patent number 8,866,127
- Issue date Oct 21, 2014
- Panasonic Corporation
- Kunimasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor element
- Patent number 8,748,901
- Issue date Jun 10, 2014
- Panasonic Corporation
- Kunimasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor element
- Patent number 8,686,439
- Issue date Apr 1, 2014
- Panasonic Corporation
- Kunimasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor element and manufacturing method therefor
- Patent number 8,476,733
- Issue date Jul 2, 2013
- Panasonic Corporation
- Kunimasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip and process for production thereof
- Patent number 8,399,962
- Issue date Mar 19, 2013
- Panasonic Corporation
- Masashi Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 7,846,828
- Issue date Dec 7, 2010
- Panasonic Corporation
- Osamu Kusumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and production method therefor
- Patent number 7,816,688
- Issue date Oct 19, 2010
- Panasonic Corporation
- Kenya Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus including power semiconductor device constr...
- Patent number 7,786,565
- Issue date Aug 31, 2010
- Panasonic Corporation
- Makoto Kitabatake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 7,772,098
- Issue date Aug 10, 2010
- Panasonic Corporation
- Osamu Kusumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide semiconductor element
- Patent number 7,718,519
- Issue date May 18, 2010
- Panasonic Corporation
- Kunimasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide-oxide layered structure, production method thereof,...
- Patent number 7,709,403
- Issue date May 4, 2010
- Panasonic Corporation
- Kenya Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide gap semiconductor power device with temperature independent re...
- Patent number 7,671,409
- Issue date Mar 2, 2010
- Panasonic Corporation
- Makoto Kitabatake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 7,507,999
- Issue date Mar 24, 2009
- Panasonic Corporation
- Osamu Kusumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 7,473,929
- Issue date Jan 6, 2009
- Panasonic Corporation
- Osamu Kusumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and process for producing the...
- Patent number 7,462,540
- Issue date Dec 9, 2008
- Panasonic Corporation
- Kunimasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device for implementing an inverter having a reduced size
- Patent number 7,436,031
- Issue date Oct 14, 2008
- Matsushita Electric Industrial Co., Ltd.
- Makoto Kitabatake
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
High-breakdown-voltage insulated gate semiconductor device
- Patent number 7,381,993
- Issue date Jun 3, 2008
- Matsushita Electric Industrial Co., Ltd.
- Masao Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a plurality of semiconductor elements eac...
- Patent number 7,230,273
- Issue date Jun 12, 2007
- Matsushita Electric Industrial Co., Ltd.
- Makoto Kitabatake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method for fabricating the...
- Patent number 7,217,954
- Issue date May 15, 2007
- Matsushita Electric Industrial Co., Ltd.
- Osamu Kusumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-breakdown-voltage insulated gate semiconductor device
- Patent number 7,214,984
- Issue date May 8, 2007
- Matsushita Electric Industrial Co., Ltd.
- Masao Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,995,397
- Issue date Feb 7, 2006
- Matsushita Electric Industrial Co., Ltd.
- Kenya Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, semiconductor device and method for fabric...
- Patent number 6,995,396
- Issue date Feb 7, 2006
- Matsushita Electric Industrial Co., Ltd.
- Kunimasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an active region of alternating layers
- Patent number 6,989,553
- Issue date Jan 24, 2006
- Matsushita Electric Industrial Co., Ltd.
- Toshiya Yokogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Equipment for communication system and semiconductor integrated cir...
- Patent number 6,940,127
- Issue date Sep 6, 2005
- Matsushita Electric Industrial Co., Ltd.
- Toshiya Yokogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC-MISFET and method for fabricating the same
- Patent number 6,940,110
- Issue date Sep 6, 2005
- Matsushita Electric Industrial Co., Ltd.
- Kunimasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 6,900,483
- Issue date May 31, 2005
- Matsushita Electric Industrial Co., Ltd.
- Masao Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MISFET
- Patent number 6,864,507
- Issue date Mar 8, 2005
- Matsushita Electric Industrial Co., Ltd.
- Toshiya Yokogawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR LIGHT-EMITTING DEVICE
- Publication number 20210359163
- Publication date Nov 18, 2021
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Toru TAKAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING ELEMENT
- Publication number 20200412101
- Publication date Dec 31, 2020
- Panasonic Semiconductor Solutions Co., Ltd.
- Toru TAKAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR ELEMENT
- Publication number 20140151719
- Publication date Jun 5, 2014
- PANASONIC CORPORATION
- Kunimasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND LIGHT SOURCE
- Publication number 20140048771
- Publication date Feb 20, 2014
- PANASONIC CORPORATION
- Kunimasa TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LIGHT SOURCE INCLU...
- Publication number 20140014997
- Publication date Jan 16, 2014
- PANASONIC CORPORATION
- Ryou KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR FABRICATING TH...
- Publication number 20130168701
- Publication date Jul 4, 2013
- PANASONIC CORPORATION
- Tsutomu Kiyosawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE...
- Publication number 20130140586
- Publication date Jun 6, 2013
- PANASONIC CORPORATION
- Kunimasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CHIP AND PROCESS FOR PRODUCTION THEREOF
- Publication number 20120138951
- Publication date Jun 7, 2012
- PANASONIC CORPORATION
- Masashi Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR
- Publication number 20120018740
- Publication date Jan 26, 2012
- PANASONIC CORPORATION
- Kunimasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20100093161
- Publication date Apr 15, 2010
- Osamu Kusumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR ELEMENT
- Publication number 20090186470
- Publication date Jul 23, 2009
- Kunimasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20090104762
- Publication date Apr 23, 2009
- PANASONIC CORPORATION
- Osamu KUSUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Device
- Publication number 20080265260
- Publication date Oct 30, 2008
- Makoto Kitabatake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-breakdown-voltage insulated gate semiconductor device
- Publication number 20070176230
- Publication date Aug 2, 2007
- Matsushita Electric Industrial Co., Ltd.
- Masao Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and module using the same
- Publication number 20070158778
- Publication date Jul 12, 2007
- Makoto Kitabatake
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor element
- Publication number 20060220026
- Publication date Oct 5, 2006
- Masao Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device and process for producing the...
- Publication number 20060220027
- Publication date Oct 5, 2006
- Kunimasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20060055027
- Publication date Mar 16, 2006
- Makoto Kitabatake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing same
- Publication number 20050173739
- Publication date Aug 11, 2005
- Osamu Kusumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide-oxide layered structure, production method thereof,...
- Publication number 20050077569
- Publication date Apr 14, 2005
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Kenya Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20050001217
- Publication date Jan 6, 2005
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Osamu Kusumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and its manufacturing method
- Publication number 20040248330
- Publication date Dec 9, 2004
- Makoto Kitabatake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20040217375
- Publication date Nov 4, 2004
- Toshiya Yokogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device and method for fabricating the...
- Publication number 20040183080
- Publication date Sep 23, 2004
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Osamu Kusumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC-MISFET and method for fabricating the same
- Publication number 20040104429
- Publication date Jun 3, 2004
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Kunimasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20040051104
- Publication date Mar 18, 2004
- Kenya Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Equipment for communication system and semiconductor integrated cir...
- Publication number 20040022025
- Publication date Feb 5, 2004
- Toshiya Yokogawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MISFET
- Publication number 20030227061
- Publication date Dec 11, 2003
- Toshiya Yokogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor substrate, semiconductor device and method for fabric...
- Publication number 20030080384
- Publication date May 1, 2003
- Matsushita Electric Industrial Co., Ltd.
- Kunimasa Takahashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor device and its manufacturing method
- Publication number 20030020136
- Publication date Jan 30, 2003
- Makoto Kitabatake
- H01 - BASIC ELECTRIC ELEMENTS

Kunimasa Takahashi

Person

Patents Grantslast 30 patents

Semiconductor light emitting element

Nitride semiconductor light-emitting element and light source inclu...

Silicon carbide semiconductor element and method for fabricating th...

Nitride semiconductor light-emitting element including Si-doped lay...

Silicon carbide semiconductor element

Silicon carbide semiconductor element

Semiconductor element and manufacturing method therefor

Semiconductor chip and process for production thereof

Semiconductor device and method for fabricating the same

Semiconductor device and production method therefor

Semiconductor apparatus including power semiconductor device constr...

Method for manufacturing semiconductor device

Method for manufacturing silicon carbide semiconductor element

Silicon carbide-oxide layered structure, production method thereof,...

Wide gap semiconductor power device with temperature independent re...

Semiconductor device and method for manufacturing same

Semiconductor device and method for fabricating the same

Silicon carbide semiconductor device and process for producing the...

Device for implementing an inverter having a reduced size

High-breakdown-voltage insulated gate semiconductor device

Semiconductor device with a plurality of semiconductor elements eac...

Silicon carbide semiconductor device and method for fabricating the...

High-breakdown-voltage insulated gate semiconductor device

Semiconductor device

Semiconductor substrate, semiconductor device and method for fabric...

Semiconductor device having an active region of alternating layers

Equipment for communication system and semiconductor integrated cir...

SiC-MISFET and method for fabricating the same

Semiconductor device and method for manufacturing the same

MISFET

Patents Applicationslast 30 patents

SEMICONDUCTOR LIGHT-EMITTING DEVICE

SEMICONDUCTOR LIGHT EMITTING ELEMENT

SILICON CARBIDE SEMICONDUCTOR ELEMENT

NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND LIGHT SOURCE

NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LIGHT SOURCE INCLU...

SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR FABRICATING TH...

SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE...

SEMICONDUCTOR CHIP AND PROCESS FOR PRODUCTION THEREOF

SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR ELEMENT

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Power Device

High-breakdown-voltage insulated gate semiconductor device

Semiconductor device and module using the same

Semiconductor element

Silicon carbide semiconductor device and process for producing the...

Semiconductor device

Semiconductor device and method for manufacturing same

Silicon carbide-oxide layered structure, production method thereof,...

Semiconductor device and method for fabricating the same

Semiconductor device and its manufacturing method

Semiconductor device

Silicon carbide semiconductor device and method for fabricating the...

SiC-MISFET and method for fabricating the same

Semiconductor device

Equipment for communication system and semiconductor integrated cir...

MISFET

Semiconductor substrate, semiconductor device and method for fabric...

Semiconductor device and its manufacturing method