Kuo-Wei Chang

Person

Santa Clara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Electrode materials and interface layers to minimize chalcogenide i...
- Patent number 9,716,226
- Issue date Jul 25, 2017
- Intel Corporation
- F. Daniel Gealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode materials and interface layers to minimize chalcogenide i...
- Patent number 9,543,515
- Issue date Jan 10, 2017
- Intel Corporation
- F. Daniel Gealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chalcogenide glass composition and chalcogenide switch devices
- Patent number 9,379,321
- Issue date Jun 28, 2016
- Intel Corporation
- Kuo-Wei Chang
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Phase change memory including ovonic threshold switch with layered...
- Patent number 9,029,826
- Issue date May 12, 2015
- Micron Technology, Inc.
- Kuo-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low power phase change memory cell
- Patent number 8,971,089
- Issue date Mar 3, 2015
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depositing titanium silicon nitride films for forming phase change...
- Patent number 8,633,463
- Issue date Jan 21, 2014
- Micron Technology, Inc.
- Jong-Won Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Phase change memory including ovonic threshold switch with layered...
- Patent number 8,530,875
- Issue date Sep 10, 2013
- Micron Technology, Inc.
- Kuo-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depositing titanium silicon nitride films for forming phase change...
- Patent number 8,501,523
- Issue date Aug 6, 2013
- Micron Technology, Inc.
- Jong-Won Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ovonic threshold switch film composition for TSLAGS material
- Patent number 8,148,707
- Issue date Apr 3, 2012
- STMicroelectronics S.r.l.
- Stanford Ovshinsky
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Forming a carbon passivated ovonic threshold switch
- Patent number 7,939,815
- Issue date May 10, 2011
- STMicroelectronics S.r.l.
- Jinwook Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming phase change memory devices in a pulsed DC deposi...
- Patent number 7,888,240
- Issue date Feb 15, 2011
- STMicroelectronics S.r.l.
- Roger Hamamjy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Adhesion layer for a polymer memory device and method therefor
- Patent number 6,885,021
- Issue date Apr 26, 2005
- Ovonyx, Inc.
- Mac Apodaca
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTRODE MATERIALS AND INTERFACE LAYERS TO MINIMIZE CHALCOGENIDE I...
- Publication number 20170084835
- Publication date Mar 23, 2017
- Intel Corporation
- F. Daniel Gealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODE MATERIALS AND INTERFACE LAYERS TO MINIMIZE CHALCOGENIDE I...
- Publication number 20150123066
- Publication date May 7, 2015
- F. Daniel Gealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW POWER PHASE CHANGE MEMORY CELL
- Publication number 20140003123
- Publication date Jan 2, 2014
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY INCLUDING OVONIC THRESHOLD SWITCH WITH LAYERED...
- Publication number 20130344676
- Publication date Dec 26, 2013
- Micron Technology, Inc.
- Kuo-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOSITING TITANIUM SILICON NITRIDE FILMS FOR FORMING PHASE CHANGE...
- Publication number 20130299767
- Publication date Nov 14, 2013
- Jong-Won Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FORMING A CARBON PASSIVATED OVONIC THRESHOLD SWITCH
- Publication number 20100163818
- Publication date Jul 1, 2010
- STMicroelectronics S.r.l.
- Jinwook Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming phase change memory devices in a pulsed DC deposi...
- Publication number 20080102560
- Publication date May 1, 2008
- STMicroelectronics S.r.l.
- Roger Hamamjy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Forming ovonic threshold switches with reduced deposition chamber g...
- Publication number 20070227878
- Publication date Oct 4, 2007
- Roger Hamamjy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Phase change memory device having an adhesion layer and manufacturi...
- Publication number 20060278900
- Publication date Dec 14, 2006
- STMicroelectronics S.r. I.
- Kuo-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pulsed DC and RF physical vapor deposition cluster tool
- Publication number 20060239800
- Publication date Oct 26, 2006
- Roger Hamamjy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Depositing titanium silicon nitride films for forming phase change...
- Publication number 20060091492
- Publication date May 4, 2006
- Jong-Won Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Adhesion layer for a polymer memory device and method therefor
- Publication number 20030122170
- Publication date Jul 3, 2003
- Mac Apodaca
- H01 - BASIC ELECTRIC ELEMENTS

Kuo-Wei Chang

Person

Patents Grantslast 30 patents

Electrode materials and interface layers to minimize chalcogenide i...

Electrode materials and interface layers to minimize chalcogenide i...

Chalcogenide glass composition and chalcogenide switch devices

Phase change memory including ovonic threshold switch with layered...

Low power phase change memory cell

Depositing titanium silicon nitride films for forming phase change...

Phase change memory including ovonic threshold switch with layered...

Depositing titanium silicon nitride films for forming phase change...

Ovonic threshold switch film composition for TSLAGS material

Forming a carbon passivated ovonic threshold switch

Method of forming phase change memory devices in a pulsed DC deposi...

Adhesion layer for a polymer memory device and method therefor

Patents Applicationslast 30 patents

ELECTRODE MATERIALS AND INTERFACE LAYERS TO MINIMIZE CHALCOGENIDE I...

ELECTRODE MATERIALS AND INTERFACE LAYERS TO MINIMIZE CHALCOGENIDE I...

LOW POWER PHASE CHANGE MEMORY CELL

PHASE CHANGE MEMORY INCLUDING OVONIC THRESHOLD SWITCH WITH LAYERED...

DEPOSITING TITANIUM SILICON NITRIDE FILMS FOR FORMING PHASE CHANGE...

FORMING A CARBON PASSIVATED OVONIC THRESHOLD SWITCH

Method of forming phase change memory devices in a pulsed DC deposi...

Forming ovonic threshold switches with reduced deposition chamber g...

Phase change memory device having an adhesion layer and manufacturi...

Pulsed DC and RF physical vapor deposition cluster tool

Depositing titanium silicon nitride films for forming phase change...

Adhesion layer for a polymer memory device and method therefor