Kurt Rottner

Person

Kista, SE

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing a region doped with boron in a SiC-layer
- Patent number 6,703,294
- Issue date Mar 9, 2004
- Cree, Inc.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode of SiC and a method for production thereof
- Patent number 6,104,043
- Issue date Aug 15, 2000
- ABB Research Ltd.
- Willy Hermansson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a SiC semiconductor device comprising a pn junction...
- Patent number 6,040,237
- Issue date Mar 21, 2000
- ABB Research Ltd.
- Mietek Bakowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor device comprising a pn junction with a voltage ab...
- Patent number 6,002,159
- Issue date Dec 14, 1999
- ABB Research Ltd.
- Mietek Bakowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PN-diode of SiC and a method for production thereof
- Patent number 5,902,117
- Issue date May 11, 1999
- ABB Research Ltd.
- Kurt Rottner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor device comprising an implantat...
- Patent number 5,849,620
- Issue date Dec 15, 1998
- ABB Research Ltd.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor device having a semiconductor...
- Patent number 5,710,059
- Issue date Jan 20, 1998
- ABB Research Ltd.
- Kurt Rottner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor device having semiconductor la...
- Patent number 5,705,406
- Issue date Jan 6, 1998
- ABB Research Ltd.
- Kurt Rottner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor device by the use of an implan...
- Patent number 5,674,765
- Issue date Oct 7, 1997
- ABB Research Ltd.
- Kurt Rottner
- H01 - BASIC ELECTRIC ELEMENTS

Kurt Rottner

Person

Patents Grantslast 30 patents

Method for producing a region doped with boron in a SiC-layer

Schottky diode of SiC and a method for production thereof

Fabrication of a SiC semiconductor device comprising a pn junction...

SiC semiconductor device comprising a pn junction with a voltage ab...

PN-diode of SiC and a method for production thereof

Method for producing a semiconductor device comprising an implantat...

Method for producing a semiconductor device having a semiconductor...

Method for producing a semiconductor device having semiconductor la...

Method for producing a semiconductor device by the use of an implan...