Kwame Eason

Person

East Palo Alto, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Ultrahigh selective nitride etch to form FinFET devices
- Patent number 11,469,079
- Issue date Oct 11, 2022
- Lam Research Corporation
- Kwame Eason
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma apparatus for high aspect ratio selective lateral etch using...
- Patent number 11,011,388
- Issue date May 18, 2021
- Lam Research Corporation
- Kwame Eason
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrahigh selective polysilicon etch with high throughput
- Patent number 10,283,615
- Issue date May 7, 2019
- Novellus Systems, Inc.
- Dengliang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio selective lateral etch using cyclic passivation a...
- Patent number 10,276,398
- Issue date Apr 30, 2019
- Lam Research Corporation
- Kwame Eason
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for increasing electron density levels in a plasm...
- Patent number 10,147,588
- Issue date Dec 4, 2018
- Lam Research Corporation
- Kwame Eason
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED WORD LINE CONTACT STRUCTURES IN THREE-DIMENSIONAL (3D) M...
- Publication number 20230402389
- Publication date Dec 14, 2023
- Intel Corporation
- Nanda Kumar Chakravarthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARALLEL STAIRCASE 3D NAND
- Publication number 20230200063
- Publication date Jun 22, 2023
- Intel Corporation
- Deepak Thimmegowda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRAHIGH SELECTIVE NITRIDE ETCH TO FORM FINFET DEVICES
- Publication number 20230084901
- Publication date Mar 16, 2023
- LAM RESEARCH CORPORATION
- Kwame EASON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED WORD LINE CONTACT STRUCTURES IN THREE-DIMENSIONAL (3D) M...
- Publication number 20210143100
- Publication date May 13, 2021
- Intel Corporation
- Nanda Kumar Chakravarthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRAHIGH SELECTIVE POLYSILICON ETCH WITH HIGH THROUGHPUT
- Publication number 20190221654
- Publication date Jul 18, 2019
- Novellus Systems, Inc.
- Dengliang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ASPECT RATIO SELECTIVE LATERAL ETCH USING CYCLIC PASSIVATION A...
- Publication number 20190206697
- Publication date Jul 4, 2019
- LAM RESEARCH CORPORATION
- Kwame Eason
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ASPECT RATIO SELECTIVE LATERAL ETCH USING CYCLIC PASSIVATION A...
- Publication number 20190043732
- Publication date Feb 7, 2019
- LAM RESEARCH CORPORATION
- Kwame Eason
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRAHIGH SELECTIVE NITRIDE ETCH TO FORM FINFET DEVICES
- Publication number 20180269070
- Publication date Sep 20, 2018
- LAM RESEARCH CORPORATION
- Kwame Eason
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR INCREASING ELECTRON DENSITY LEVELS IN A PLASM...
- Publication number 20170236694
- Publication date Aug 17, 2017
- LAM RESEARCH CORPORATION
- Kwame Eason
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRAHIGH SELECTIVE POLYSILICON ETCH WITH HIGH THROUGHPUT
- Publication number 20160064519
- Publication date Mar 3, 2016
- LAM RESEARCH CORPORATION
- Dengliang Yang
- H01 - BASIC ELECTRIC ELEMENTS

Kwame Eason

Person

Patents Grantslast 30 patents

Ultrahigh selective nitride etch to form FinFET devices

Plasma apparatus for high aspect ratio selective lateral etch using...

Ultrahigh selective polysilicon etch with high throughput

High aspect ratio selective lateral etch using cyclic passivation a...

System and method for increasing electron density levels in a plasm...

Patents Applicationslast 30 patents

INTEGRATED WORD LINE CONTACT STRUCTURES IN THREE-DIMENSIONAL (3D) M...

PARALLEL STAIRCASE 3D NAND

ULTRAHIGH SELECTIVE NITRIDE ETCH TO FORM FINFET DEVICES

INTEGRATED WORD LINE CONTACT STRUCTURES IN THREE-DIMENSIONAL (3D) M...

ULTRAHIGH SELECTIVE POLYSILICON ETCH WITH HIGH THROUGHPUT

HIGH ASPECT RATIO SELECTIVE LATERAL ETCH USING CYCLIC PASSIVATION A...

HIGH ASPECT RATIO SELECTIVE LATERAL ETCH USING CYCLIC PASSIVATION A...

ULTRAHIGH SELECTIVE NITRIDE ETCH TO FORM FINFET DEVICES

SYSTEM AND METHOD FOR INCREASING ELECTRON DENSITY LEVELS IN A PLASM...

ULTRAHIGH SELECTIVE POLYSILICON ETCH WITH HIGH THROUGHPUT