Kwan-Yong LIM

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vertically oriented metal silicide containing e-fuse device
- Patent number 10,879,171
- Issue date Dec 29, 2020
- GLOBALFOUNDRIES Inc.
- Chun Yu Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor static random access memory cell
- Patent number 10,580,779
- Issue date Mar 3, 2020
- GLOBALFOUNDRIES Inc.
- Kwan-Yong Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a vertical SRAM with cross-coupled contacts...
- Patent number 10,529,724
- Issue date Jan 7, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically oriented metal silicide containing e-fuse device and met...
- Patent number 10,510,662
- Issue date Dec 17, 2019
- GLOBALFOUNDRIES Inc.
- Chun Yu Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned single diffusion break isolation with reduction of str...
- Patent number 10,468,481
- Issue date Nov 5, 2019
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Triple gate technology for 14 nanometer and onwards
- Patent number 10,297,672
- Issue date May 21, 2019
- GLOBALFOUNDRIES Inc.
- Seong Yeol Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming epi semiconductor material on a recessed fin in...
- Patent number 10,290,738
- Issue date May 14, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical channel field-effect transistor (FET) process compatible l...
- Patent number 10,243,073
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for STI recess control for highly sca...
- Patent number 10,236,291
- Issue date Mar 19, 2019
- GLOBALFOUNDRIES Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of vertical field-effect transistors and saddle fin-typ...
- Patent number 10,163,900
- Issue date Dec 25, 2018
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of bottom junction in vertical FET devices
- Patent number 10,141,446
- Issue date Nov 27, 2018
- GLOBALFOUNDRIES Inc.
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming epi semiconductor material on a thinned fin in t...
- Patent number 10,121,868
- Issue date Nov 6, 2018
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical SRAM structure with cross-coupling contacts penetrating th...
- Patent number 10,083,971
- Issue date Sep 25, 2018
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for providing source-drain epitaxy la...
- Patent number 10,068,978
- Issue date Sep 4, 2018
- GLOBALFOUNDRIES Inc.
- Kwan-Yong Lim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method to form silicide and contact at embedded epitaxial facet
- Patent number 10,008,499
- Issue date Jun 26, 2018
- Texas Instruments Incorporated
- Kwan-Yong Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for self-aligned retrograde well dopi...
- Patent number 9,960,086
- Issue date May 1, 2018
- GLOBALFOUNDRIES Inc.
- Mira Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active area shapes reducing device size
- Patent number 9,929,236
- Issue date Mar 27, 2018
- GLOBALFOUNDRIES Inc.
- Bipul C. Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-transport field-effect transistors with a damascene gate s...
- Patent number 9,911,738
- Issue date Mar 6, 2018
- GLOBALFOUNDRIES Inc.
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single and double diffusion breaks on integrated circuit products c...
- Patent number 9,865,704
- Issue date Jan 9, 2018
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Block patterning method enabling merged space in SRAM with heteroge...
- Patent number 9,859,125
- Issue date Jan 2, 2018
- GLOBALFOUNDRIES Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming fin cut regions by oxidizing fin portions
- Patent number 9,847,418
- Issue date Dec 19, 2017
- GLOBALFOUNDRIES Inc.
- Kwan-Yong Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of bottom junction in vertical FET devices
- Patent number 9,842,933
- Issue date Dec 12, 2017
- GLOBALFOUNDRIES Inc.
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for STI recess control for highly sca...
- Patent number 9,837,404
- Issue date Dec 5, 2017
- GLOBALFOUNDRIES Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form silicide and contact at embedded epitaxial facet
- Patent number 9,812,452
- Issue date Nov 7, 2017
- Texas Instruments Incorporated
- Kwan-Yong Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a gate structure on a vertical transistor device
- Patent number 9,799,751
- Issue date Oct 24, 2017
- GLOBALFOUNDRIES Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods of forming VFET with self-aligned replacement m...
- Patent number 9,773,708
- Issue date Sep 26, 2017
- GLOBALFOUNDRIES Inc.
- John Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active area shapes reducing device size
- Patent number 9,761,662
- Issue date Sep 12, 2017
- GLOBALFOUNDRIES Inc.
- Bipul C. Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical channel transistor-based semiconductor memory structure
- Patent number 9,711,511
- Issue date Jul 18, 2017
- GLOBALFOUNDRIES Inc.
- Kwan-Yong Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming replacement gate structures and bottom and top s...
- Patent number 9,640,636
- Issue date May 2, 2017
- GLOBALFOUNDRIES Inc.
- Steven J. Bentley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for providing source-drain epitaxy la...
- Patent number 9,640,533
- Issue date May 2, 2017
- GLOBALFOUNDRIES Inc.
- Kwan-Yong Lim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICALLY ORIENTED METAL SILICIDE CONTAINING E-FUSE DEVICE
- Publication number 20200020631
- Publication date Jan 16, 2020
- GLOBALFOUNDRIES INC.
- Chun Yu Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR STATIC RANDOM ACCESS MEMORY CELL
- Publication number 20190267387
- Publication date Aug 29, 2019
- GLOBALFOUNDRIES INC.
- Kwan-Yong Lim
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-ALIGNED SINGLE DIFFUSION BREAK ISOLATION WITH REDUCTION OF STR...
- Publication number 20190229183
- Publication date Jul 25, 2019
- GLOBALFOUNDRIES INC.
- Haiting WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY ORIENTED METAL SILICIDE CONTAINING E-FUSE DEVICE AND MET...
- Publication number 20190139892
- Publication date May 9, 2019
- GLOBALFOUNDRIES INC.
- Chun Yu Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SRAM STRUCTURE WITH PENETRATING CROSS-COUPLED CONTACTS
- Publication number 20190027483
- Publication date Jan 24, 2019
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRIPLE GATE TECHNOLOGY FOR 14 NANOMETER AND ONWARDS
- Publication number 20190019880
- Publication date Jan 17, 2019
- GLOBALFOUNDRIES INC.
- Seong Yeol MUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING EPI SEMICONDUCTOR MATERIAL ON A THINNED FIN IN T...
- Publication number 20180323269
- Publication date Nov 8, 2018
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING EPI SEMICONDUCTOR MATERIAL ON A RECESSED FIN IN...
- Publication number 20180294348
- Publication date Oct 11, 2018
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF VERTICAL FIELD-EFFECT TRANSISTORS AND SADDLE FIN-TYP...
- Publication number 20180226402
- Publication date Aug 9, 2018
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS AND SYSTEM FOR SELF-ALIGNED RETROGRADE WELL DOPI...
- Publication number 20180090391
- Publication date Mar 29, 2018
- GLOBALFOUNDRIES INC.
- Mira Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF BOTTOM JUNCTION IN VERTICAL FET DEVICES
- Publication number 20180061993
- Publication date Mar 1, 2018
- GLOBALFOUNDRIES INC.
- Hiroaki NIIMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS AND SYSTEM FOR STI RECESS CONTROL FOR HIGHLY SCA...
- Publication number 20180061832
- Publication date Mar 1, 2018
- GLOBALFOUNDRIES INC.
- Min Gyu SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL CHANNEL FIELD-EFFECT TRANSISTOR (FET) PROCESS COMPATIBLE L...
- Publication number 20180053843
- Publication date Feb 22, 2018
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FORM SILICIDE AND CONTACT AT EMBEDDED EPITAXIAL FACET
- Publication number 20180047728
- Publication date Feb 15, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Kwan-Yong LIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, APPARATUS, AND SYSTEM FOR REDUCING DOPANT CONCENTRATIONS IN...
- Publication number 20180033789
- Publication date Feb 1, 2018
- GLOBALFOUNDRIES INC.
- Steven Bentley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL CHANNEL TRANSISTOR-BASED SEMICONDUCTOR STRUCTURE
- Publication number 20170373071
- Publication date Dec 28, 2017
- GLOBALFOUNDRIES INC.
- Kwan-Yong LIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF BOTTOM JUNCTION IN VERTICAL FET DEVICES
- Publication number 20170358687
- Publication date Dec 14, 2017
- GLOBALFOUNDRIES INC.
- Hiroaki NIIMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A GATE STRUCTURE ON A VERTICAL TRANSISTOR DEVICE
- Publication number 20170301776
- Publication date Oct 19, 2017
- GLOBALFOUNDRIES INC.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS AND SYSTEM FOR STI RECESS CONTROL FOR HIGHLY SCA...
- Publication number 20170278844
- Publication date Sep 28, 2017
- GLOBALFOUNDRIES INC.
- Min Gyu SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BLOCK PATTERNING METHOD ENABLING MERGED SPACE IN SRAM WITH HETEROGE...
- Publication number 20170271163
- Publication date Sep 21, 2017
- GLOBALFOUNDRIES INC.
- Min Gyu SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS AND SYSTEM FOR PROVIDING SOURCE-DRAIN EPITAXY LA...
- Publication number 20170200797
- Publication date Jul 13, 2017
- GLOBALFOUNDRIES INC.
- Kwan-Yong Lim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SINGLE AND DOUBLE DIFFUSION BREAKS ON INTEGRATED CIRCUIT PRODUCTS C...
- Publication number 20170141211
- Publication date May 18, 2017
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FORM SILICIDE AND CONTACT AT EMBEDDED EPITAXIAL FACET
- Publication number 20170047329
- Publication date Feb 16, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Kwan-Yong LIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PUNCH-THROUGH-STOP AFTER PARTIAL FIN ETCH
- Publication number 20160307807
- Publication date Oct 20, 2016
- GLOBALFOUNDRIES INC.
- Kwan-Yong LIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS AND SYSTEM FOR PROVIDING SOURCE-DRAIN EPITAXY LA...
- Publication number 20160268257
- Publication date Sep 15, 2016
- GLOBALFOUNDRIES INC.
- Kwan-Yong Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURES HAVING UNIFORM CHANNEL SIZE AND METHODS OF FABRIC...
- Publication number 20160204265
- Publication date Jul 14, 2016
- GLOBALFOUNDRIES INC.
- Min Gyu SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS TO TUNE THRESHOLD VOLTAGE OF DEVICE WITH HIGH...
- Publication number 20160172443
- Publication date Jun 16, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Younsung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING DIFFUSION BREAKS ON INTEGRATED CIRCUIT PRODUCTS...
- Publication number 20160163604
- Publication date Jun 9, 2016
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURES HAVING UNIFORM CHANNEL SIZE AND METHODS OF FABRIC...
- Publication number 20160071932
- Publication date Mar 10, 2016
- GLOBALFOUNDRIES INC.
- Min Gyu SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAISED SOURCE/DRAIN EPI WITH SUPPRESSED LATERAL EPI OVERGROWTH
- Publication number 20160056238
- Publication date Feb 25, 2016
- GLOBALFOUNDRIES INC.
- Kwan-Yong LIM
- H01 - BASIC ELECTRIC ELEMENTS

Kwan-Yong LIM

Person

Patents Grantslast 30 patents

Vertically oriented metal silicide containing e-fuse device

Vertical transistor static random access memory cell

Method of manufacturing a vertical SRAM with cross-coupled contacts...

Vertically oriented metal silicide containing e-fuse device and met...

Self-aligned single diffusion break isolation with reduction of str...

Triple gate technology for 14 nanometer and onwards

Methods of forming epi semiconductor material on a recessed fin in...

Vertical channel field-effect transistor (FET) process compatible l...

Methods, apparatus and system for STI recess control for highly sca...

Integration of vertical field-effect transistors and saddle fin-typ...

Formation of bottom junction in vertical FET devices

Methods of forming epi semiconductor material on a thinned fin in t...

Vertical SRAM structure with cross-coupling contacts penetrating th...

Methods, apparatus and system for providing source-drain epitaxy la...

Method to form silicide and contact at embedded epitaxial facet

Methods, apparatus and system for self-aligned retrograde well dopi...

Active area shapes reducing device size

Vertical-transport field-effect transistors with a damascene gate s...

Single and double diffusion breaks on integrated circuit products c...

Block patterning method enabling merged space in SRAM with heteroge...

Methods of forming fin cut regions by oxidizing fin portions

Formation of bottom junction in vertical FET devices

Methods, apparatus and system for STI recess control for highly sca...

Method to form silicide and contact at embedded epitaxial facet

Methods of forming a gate structure on a vertical transistor device

Devices and methods of forming VFET with self-aligned replacement m...

Active area shapes reducing device size

Vertical channel transistor-based semiconductor memory structure

Methods of forming replacement gate structures and bottom and top s...

Methods, apparatus and system for providing source-drain epitaxy la...

Patents Applicationslast 30 patents

VERTICALLY ORIENTED METAL SILICIDE CONTAINING E-FUSE DEVICE

VERTICAL TRANSISTOR STATIC RANDOM ACCESS MEMORY CELL

SELF-ALIGNED SINGLE DIFFUSION BREAK ISOLATION WITH REDUCTION OF STR...

VERTICALLY ORIENTED METAL SILICIDE CONTAINING E-FUSE DEVICE AND MET...

VERTICAL SRAM STRUCTURE WITH PENETRATING CROSS-COUPLED CONTACTS

TRIPLE GATE TECHNOLOGY FOR 14 NANOMETER AND ONWARDS

METHODS OF FORMING EPI SEMICONDUCTOR MATERIAL ON A THINNED FIN IN T...

METHODS OF FORMING EPI SEMICONDUCTOR MATERIAL ON A RECESSED FIN IN...

INTEGRATION OF VERTICAL FIELD-EFFECT TRANSISTORS AND SADDLE FIN-TYP...

METHODS, APPARATUS AND SYSTEM FOR SELF-ALIGNED RETROGRADE WELL DOPI...

FORMATION OF BOTTOM JUNCTION IN VERTICAL FET DEVICES

METHODS, APPARATUS AND SYSTEM FOR STI RECESS CONTROL FOR HIGHLY SCA...

VERTICAL CHANNEL FIELD-EFFECT TRANSISTOR (FET) PROCESS COMPATIBLE L...

METHOD TO FORM SILICIDE AND CONTACT AT EMBEDDED EPITAXIAL FACET

METHOD, APPARATUS, AND SYSTEM FOR REDUCING DOPANT CONCENTRATIONS IN...

VERTICAL CHANNEL TRANSISTOR-BASED SEMICONDUCTOR STRUCTURE

FORMATION OF BOTTOM JUNCTION IN VERTICAL FET DEVICES

METHODS OF FORMING A GATE STRUCTURE ON A VERTICAL TRANSISTOR DEVICE

METHODS, APPARATUS AND SYSTEM FOR STI RECESS CONTROL FOR HIGHLY SCA...

BLOCK PATTERNING METHOD ENABLING MERGED SPACE IN SRAM WITH HETEROGE...

METHODS, APPARATUS AND SYSTEM FOR PROVIDING SOURCE-DRAIN EPITAXY LA...

SINGLE AND DOUBLE DIFFUSION BREAKS ON INTEGRATED CIRCUIT PRODUCTS C...

METHOD TO FORM SILICIDE AND CONTACT AT EMBEDDED EPITAXIAL FACET

PUNCH-THROUGH-STOP AFTER PARTIAL FIN ETCH

METHODS, APPARATUS AND SYSTEM FOR PROVIDING SOURCE-DRAIN EPITAXY LA...

FINFET STRUCTURES HAVING UNIFORM CHANNEL SIZE AND METHODS OF FABRIC...

METHOD AND APPARATUS TO TUNE THRESHOLD VOLTAGE OF DEVICE WITH HIGH...

METHODS OF FORMING DIFFUSION BREAKS ON INTEGRATED CIRCUIT PRODUCTS...

FINFET STRUCTURES HAVING UNIFORM CHANNEL SIZE AND METHODS OF FABRIC...

RAISED SOURCE/DRAIN EPI WITH SUPPRESSED LATERAL EPI OVERGROWTH