Kwangseok KIM

Person

Gyeonggi-do, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic tunneling junction device and memory device including the...
- Patent number 12,150,387
- Issue date Nov 19, 2024
- Samsung Electronics Co., Ltd.
- Kwangseok Kim
Information Patent Grant
Synthetic antiferromagnet, magnetic tunneling junction device inclu...
- Patent number 12,080,459
- Issue date Sep 3, 2024
- Samsung Electronics Co., Ltd.
- Jeongchun Ryu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunneling junction device and memory device including the...
- Patent number 12,052,930
- Issue date Jul 30, 2024
- Samsung Electronics Co., Ltd.
- Kwangseok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating a cap layer for a magnetic random access memory (MRAM)...
- Patent number 10,256,399
- Issue date Apr 9, 2019
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory devices and methods for manufacturing the same
- Patent number 10,003,011
- Issue date Jun 19, 2018
- Samsung Electronics, Co., Ltd.
- Sang Hwan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device and method for manufacturing the same
- Patent number 9,923,138
- Issue date Mar 20, 2018
- Samsung Electronics Co., Ltd.
- Sang Hwan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device and method of manufacturing the same
- Patent number 9,859,488
- Issue date Jan 2, 2018
- Samsung Electronics Co., Ltd.
- Joonmyoung Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular magnetization film, perpendicular magnetization film...
- Patent number 9,842,636
- Issue date Dec 12, 2017
- National Institute for Materials Science
- Hiroaki Sukegawa
- G11 - INFORMATION STORAGE
Information Patent Grant
High temperature endurable MTJ stack
- Patent number 9,799,823
- Issue date Oct 24, 2017
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device and method of manufacturing the same
- Patent number 9,640,755
- Issue date May 2, 2017
- Samsung Electronics Co., Ltd.
- Joonmyoung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device and method for manufacturing the same
- Patent number 9,543,505
- Issue date Jan 10, 2017
- Samsung Electronics Co., Ltd.
- Sang Hwan Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SYNTHETIC ANTIFERROMAGNET, MAGNETIC TUNNELING JUNCTION DEVICE INCLU...
- Publication number 20240387089
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- Jeongchun RYU
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...
- Publication number 20240334840
- Publication date Oct 3, 2024
- Samsung Electronics Co., Ltd.
- Kwangseok KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNELING JUNCTION DEVICE CAPABLE OF MAGNETIC SWITCHING WI...
- Publication number 20240321333
- Publication date Sep 26, 2024
- Samsung Electronics Co., Ltd.
- Jeongchun RYU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICES USING SPIN CURRENT AND ELECTRONIC APPARATUS...
- Publication number 20240251685
- Publication date Jul 25, 2024
- Samsung Electronics Co., Ltd.
- Kwangseok KIM
Information Patent Application
SPIN ORBIT TORQUE MAGNETIC MEMORY DEVICES, OPERATING METHODS THEREO...
- Publication number 20240147868
- Publication date May 2, 2024
- Samsung Electronics Co., Ltd.
- Soichiro MIZUSAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY USING SPIN CURRENT, OPERATING METHOD THEREOF, AND E...
- Publication number 20230352072
- Publication date Nov 2, 2023
- Samsung Electronics Co., Ltd.
- Kwangseok KIM
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...
- Publication number 20230225220
- Publication date Jul 13, 2023
- Samsung Electronics Co., LTD
- Kwangseok KIM
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...
- Publication number 20230225219
- Publication date Jul 13, 2023
- Samsung Electronics Co., Ltd.
- Kwangseok KIM
- G11 - INFORMATION STORAGE
Information Patent Application
SYNTHETIC ANTIFERROMAGNET, MAGNETIC TUNNELING JUNCTION DEVICE INCLU...
- Publication number 20230207177
- Publication date Jun 29, 2023
- Samsung Electronics Co., Ltd.
- Jeongchun RYU
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...
- Publication number 20230059590
- Publication date Feb 23, 2023
- Samsung Electronics Co., LTD
- Kwangseok KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...
- Publication number 20230020056
- Publication date Jan 19, 2023
- Samsung Electronics Co., Ltd.
- Kwangseok KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...
- Publication number 20230019156
- Publication date Jan 19, 2023
- Samsung Electronics Co., Ltd.
- Kwangseok KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNELING JUNCTION DEVICE, MEMORY DEVICE INCLUDING THE SAM...
- Publication number 20220285607
- Publication date Sep 8, 2022
- Samsung Electronics Co., Ltd.
- Kwangseok KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOBLE METAL CAP LAYER FOR A METAL OXIDE CAP OF A MAGNETIC TUNNEL JU...
- Publication number 20170338402
- Publication date Nov 23, 2017
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING A CAP LAYER FOR A MAGNETIC RANDOM ACCESS MEMORY (MRAM)...
- Publication number 20170338404
- Publication date Nov 23, 2017
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICES AND METHODS FOR MANUFACTURING THE SAME
- Publication number 20170294571
- Publication date Oct 12, 2017
- Sang Hwan PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH TEMPERATURE ENDURABLE MTJ STACK
- Publication number 20170294570
- Publication date Oct 12, 2017
- International Business Machines Corporation
- GUOHAN HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20170194555
- Publication date Jul 6, 2017
- Samsung Electronics Co., Ltd.
- Joonmyoung LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20170092849
- Publication date Mar 30, 2017
- Sang Hwan PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MAGNETIZATION FILM, PERPENDICULAR MAGNETIZATION FILM...
- Publication number 20160314825
- Publication date Oct 27, 2016
- NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Hiroaki SUKEGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20160133307
- Publication date May 12, 2016
- Joonmyoung LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20160079520
- Publication date Mar 17, 2016
- Sang Hwan PARK
- H01 - BASIC ELECTRIC ELEMENTS

Kwangseok KIM

Person

Patents Grantslast 30 patents

Magnetic tunneling junction device and memory device including the...

Synthetic antiferromagnet, magnetic tunneling junction device inclu...

Magnetic tunneling junction device and memory device including the...

Fabricating a cap layer for a magnetic random access memory (MRAM)...

Magnetic memory devices and methods for manufacturing the same

Magnetic memory device and method for manufacturing the same

Magnetic memory device and method of manufacturing the same

Perpendicular magnetization film, perpendicular magnetization film...

High temperature endurable MTJ stack

Magnetic memory device and method of manufacturing the same

Magnetic memory device and method for manufacturing the same

Patents Applicationslast 30 patents

SYNTHETIC ANTIFERROMAGNET, MAGNETIC TUNNELING JUNCTION DEVICE INCLU...

MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...

MAGNETIC TUNNELING JUNCTION DEVICE CAPABLE OF MAGNETIC SWITCHING WI...

MAGNETIC MEMORY DEVICES USING SPIN CURRENT AND ELECTRONIC APPARATUS...

SPIN ORBIT TORQUE MAGNETIC MEMORY DEVICES, OPERATING METHODS THEREO...

MAGNETIC MEMORY USING SPIN CURRENT, OPERATING METHOD THEREOF, AND E...

MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...

MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...

SYNTHETIC ANTIFERROMAGNET, MAGNETIC TUNNELING JUNCTION DEVICE INCLU...

MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...

MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...

MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...

MAGNETIC TUNNELING JUNCTION DEVICE, MEMORY DEVICE INCLUDING THE SAM...

NOBLE METAL CAP LAYER FOR A METAL OXIDE CAP OF A MAGNETIC TUNNEL JU...

FABRICATING A CAP LAYER FOR A MAGNETIC RANDOM ACCESS MEMORY (MRAM)...

MAGNETIC MEMORY DEVICES AND METHODS FOR MANUFACTURING THE SAME

HIGH TEMPERATURE ENDURABLE MTJ STACK

MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

PERPENDICULAR MAGNETIZATION FILM, PERPENDICULAR MAGNETIZATION FILM...

MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME