Kyoung-hwan Yeo

Person

Seoul, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit device
- Patent number 10,943,904
- Issue date Mar 9, 2021
- Samsung Electronics Co., Ltd.
- Min-seong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 10,854,608
- Issue date Dec 1, 2020
- Samsung Electronics Co., Ltd.
- Min-seong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 10,804,264
- Issue date Oct 13, 2020
- Samsung Electronics Co., Ltd.
- Jae-yup Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 10,763,156
- Issue date Sep 1, 2020
- Samsung Electronics Co., Ltd.
- Jae-yup Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 10,685,960
- Issue date Jun 16, 2020
- Samsung Electronics Co., Ltd.
- Min-seong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 10,672,890
- Issue date Jun 2, 2020
- Samsung Electronics Co., Ltd.
- Min-seong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including a device isolation region in a subs...
- Patent number 10,566,326
- Issue date Feb 18, 2020
- Samsung Electronics Co., Ltd.
- Dae Young Kwak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including a dummy gate structure on a fin
- Patent number 10,446,561
- Issue date Oct 15, 2019
- Samsung Electronics Co., Ltd.
- Sang-Jine Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including a dummy gate structure on a fin
- Patent number 10,096,605
- Issue date Oct 9, 2018
- Samsung Electronics Co., Ltd.
- Sang-Jine Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 10,043,873
- Issue date Aug 7, 2018
- Samsung Electronics Co., Ltd.
- Kyoung Hwan Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing the same
- Patent number 9,978,746
- Issue date May 22, 2018
- Samsung Electronics Co., Ltd.
- Kyoung Hwan Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including a dummy gate structure on a fin
- Patent number 9,947,672
- Issue date Apr 17, 2018
- Samsung Electronics Co., Ltd.
- Sang-Jine Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including insulating gates and methods for fa...
- Patent number 9,755,079
- Issue date Sep 5, 2017
- Samsung Electronics Co., Ltd.
- Sang-Jine Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 9,741,854
- Issue date Aug 22, 2017
- Samsung Electronics Co., Ltd.
- Keun Hee Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including a dummy gate structure on a fin
- Patent number 9,548,309
- Issue date Jan 17, 2017
- Samsung Electronics Co., Ltd.
- Sang-Jine Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including a dummy gate structure on a fin
- Patent number 9,299,700
- Issue date Mar 29, 2016
- Samsung Electronics Co., Ltd.
- Sang-Jine Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with buried gate pattern
- Patent number 8,680,588
- Issue date Mar 25, 2014
- Samsung Electronics Co., Ltd.
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method for manufacturing the same
- Patent number 8,415,210
- Issue date Apr 9, 2013
- Samsung Electronics Co., Ltd.
- Chang-Woo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around type semiconductor device and method of manufacturi...
- Patent number 8,395,218
- Issue date Mar 12, 2013
- Samsung Electronics Co., Ltd.
- Sung-Dae Suk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Single electron transistor
- Patent number 8,124,961
- Issue date Feb 28, 2012
- Samsung Electronics Co., Ltd.
- Sung-Dae Suk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Field effect transistor and method for manufacturing the same
- Patent number 8,101,475
- Issue date Jan 24, 2012
- Samsung Electronics Co., Ltd.
- Chang-Woo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device with multiple channels
- Patent number 8,008,141
- Issue date Aug 30, 2011
- Samsung Electronics Co., Ltd.
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single electron transistor and method of manufacturing the same
- Patent number 7,955,932
- Issue date Jun 7, 2011
- Samsung Electronics Co., Ltd.
- Sung-Dae Suk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nonvolatile memory devices having stacked structures and methods of...
- Patent number 7,943,998
- Issue date May 17, 2011
- Samsung Electronics Co., Ltd.
- Eun-Jung Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around type semiconductor device and method of manufacturi...
- Patent number 7,803,675
- Issue date Sep 28, 2010
- Samsung Electronics Co., Ltd.
- Sung-Dae Suk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods of fabricating multichannel metal oxide semiconductor (MOS)...
- Patent number 7,670,912
- Issue date Mar 2, 2010
- Samsung Electronics Co., Ltd.
- Kyoung-Hwan Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming MOSFETS using crystalline sacrificial structures
- Patent number 7,605,025
- Issue date Oct 20, 2009
- Samsung Electronics Co., Ltd.
- Min-sang Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multiple channels
- Patent number 7,579,657
- Issue date Aug 25, 2009
- Samsung Electronics Co., Ltd.
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device employing buried insulating layer and method o...
- Patent number 7,575,964
- Issue date Aug 18, 2009
- Samsung Electronics Co., Ltd.
- Chang-Woo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous group IV semiconductor substrates, integrated circuit...
- Patent number 7,429,504
- Issue date Sep 30, 2008
- Samsung Electronics Co., Ltd.
- Sung-Min Kim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20210005606
- Publication date Jan 7, 2021
- Samsung Electronics Co., Ltd.
- Min-seong LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20200251472
- Publication date Aug 6, 2020
- Samsung Electronics Co., Ltd.
- Min-seong LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20190385915
- Publication date Dec 19, 2019
- Samsung Electronics Co., Ltd.
- Youngmin PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20190326158
- Publication date Oct 24, 2019
- Samsung Electronics Co., Ltd.
- Jae-yup CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20190319027
- Publication date Oct 17, 2019
- Samsung Electronics Co., Ltd.
- Jae-yup CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20190312034
- Publication date Oct 10, 2019
- Samsung Electronics Co., Ltd.
- Min-seong LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20190312130
- Publication date Oct 10, 2019
- Samsung Electronics Co., Ltd.
- Min-seong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING A DUMMY GATE STRUCTURE ON A FIN
- Publication number 20180374859
- Publication date Dec 27, 2018
- Samsung Electronics Co., Ltd.
- Sang-Jine Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING A DEVICE ISOLATION REGION IN A SUBS...
- Publication number 20180090493
- Publication date Mar 29, 2018
- Samsung Electronics Co., Ltd.
- Dae Young Kwak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING A DUMMY GATE STRUCTURE ON A FIN
- Publication number 20170345825
- Publication date Nov 30, 2017
- Samsung Electronics Co., Ltd.
- Sang-Jine Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING A DUMMY GATE STRUCTURE ON A FIN
- Publication number 20170084617
- Publication date Mar 23, 2017
- Samsung Electronics Co., Ltd.
- Sang-Jine Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20160308008
- Publication date Oct 20, 2016
- KYOUNG HWAN YEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20160307890
- Publication date Oct 20, 2016
- Kyoung Hwan Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices Including Insulating Gates and Methods for Fa...
- Publication number 20160268414
- Publication date Sep 15, 2016
- Sang-Jine PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20160181425
- Publication date Jun 23, 2016
- Keun Hee BAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING A DUMMY GATE STRUCTURE ON A FIN
- Publication number 20160163718
- Publication date Jun 9, 2016
- Sang-Jine Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING A DUMMY GATE STRUCTURE ON A FIN
- Publication number 20150325575
- Publication date Nov 12, 2015
- Sang-Jine Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20120058613
- Publication date Mar 8, 2012
- Chang-Woo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE ELECTRON TRANSISTOR
- Publication number 20110233523
- Publication date Sep 29, 2011
- Samsung Electronics Co., Ltd.
- Sung-Dae SUK
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHODS OF FABRICATING NONVOLATILE MEMORY DEVICES HAVING STACKED ST...
- Publication number 20110189829
- Publication date Aug 4, 2011
- SAMSUNG ELECTRONICS CO., LTD.
- Eun-Jung Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate-all-around type semiconductor device and method of manufacturi...
- Publication number 20100314604
- Publication date Dec 16, 2010
- Sung-Dae Suk
- B82 - NANO-TECHNOLOGY
Information Patent Application
GATE STRUCTURES OF SEMICONDUCTOR DEVICES
- Publication number 20100237401
- Publication date Sep 23, 2010
- SAMSUNG ELECTRONICS CO., LTD.
- JEONG-DONG CHOE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multichannel Metal Oxide Semiconductor (MOS) Transistors
- Publication number 20100109087
- Publication date May 6, 2010
- Kyoung-Hwan Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor and method for manufacturing the same
- Publication number 20100035398
- Publication date Feb 11, 2010
- Chang-Woo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFETS INCLUDING CRYSTALLINE SACRIFICIAL STRUCTURES
- Publication number 20100012990
- Publication date Jan 21, 2010
- Min-sang Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH MULTIPLE CHANNELS AND METHOD OF FABRICATI...
- Publication number 20090275177
- Publication date Nov 5, 2009
- Samsung Electronics Co., Ltd.
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterogeneous Group IV Semiconductor Substrates
- Publication number 20080308845
- Publication date Dec 18, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Sung-Min Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE EMPLOYING BURIED INSULATING LAYER AND METHOD O...
- Publication number 20080296649
- Publication date Dec 4, 2008
- Samsung Electronics Co., Ltd.
- Chang-Woo OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single electron transistor and method of manufacturing the same
- Publication number 20080246021
- Publication date Oct 9, 2008
- Samsung Electronic Co., Ltd.,
- Sung-Dae Suk
- B82 - NANO-TECHNOLOGY
Information Patent Application
INTEGRATED CIRCUIT DEVICES HAVING AN EPITAXIAL PATTERN WITH A VOID...
- Publication number 20080194065
- Publication date Aug 14, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Sung-Young Lee
- H01 - BASIC ELECTRIC ELEMENTS

Kyoung-hwan Yeo

Person

Patents Grantslast 30 patents

Integrated circuit device

Integrated circuit device

Integrated circuit device

Integrated circuit device

Integrated circuit device

Integrated circuit device

Semiconductor devices including a device isolation region in a subs...

Semiconductor devices including a dummy gate structure on a fin

Semiconductor devices including a dummy gate structure on a fin

Semiconductor device and method of manufacturing the same

Semiconductor devices and methods of manufacturing the same

Semiconductor devices including a dummy gate structure on a fin

Semiconductor devices including insulating gates and methods for fa...

Method for manufacturing semiconductor device

Semiconductor devices including a dummy gate structure on a fin

Semiconductor devices including a dummy gate structure on a fin

Field effect transistor with buried gate pattern

Field effect transistor and method for manufacturing the same

Gate-all-around type semiconductor device and method of manufacturi...

Single electron transistor

Field effect transistor and method for manufacturing the same

Method of fabricating a semiconductor device with multiple channels

Single electron transistor and method of manufacturing the same

Nonvolatile memory devices having stacked structures and methods of...

Gate-all-around type semiconductor device and method of manufacturi...

Methods of fabricating multichannel metal oxide semiconductor (MOS)...

Methods of forming MOSFETS using crystalline sacrificial structures

Semiconductor device with multiple channels

Semiconductor device employing buried insulating layer and method o...

Heterogeneous group IV semiconductor substrates, integrated circuit...

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT DEVICE

INTEGRATED CIRCUIT DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

INTEGRATED CIRCUIT DEVICE

INTEGRATED CIRCUIT DEVICE

INTEGRATED CIRCUIT DEVICE

INTEGRATED CIRCUIT DEVICE

SEMICONDUCTOR DEVICES INCLUDING A DUMMY GATE STRUCTURE ON A FIN

SEMICONDUCTOR DEVICES INCLUDING A DEVICE ISOLATION REGION IN A SUBS...

SEMICONDUCTOR DEVICES INCLUDING A DUMMY GATE STRUCTURE ON A FIN

SEMICONDUCTOR DEVICES INCLUDING A DUMMY GATE STRUCTURE ON A FIN

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

Semiconductor Devices Including Insulating Gates and Methods for Fa...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES INCLUDING A DUMMY GATE STRUCTURE ON A FIN

SEMICONDUCTOR DEVICES INCLUDING A DUMMY GATE STRUCTURE ON A FIN

FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

SINGLE ELECTRON TRANSISTOR

METHODS OF FABRICATING NONVOLATILE MEMORY DEVICES HAVING STACKED ST...

Gate-all-around type semiconductor device and method of manufacturi...

GATE STRUCTURES OF SEMICONDUCTOR DEVICES

Multichannel Metal Oxide Semiconductor (MOS) Transistors

Field effect transistor and method for manufacturing the same

MOSFETS INCLUDING CRYSTALLINE SACRIFICIAL STRUCTURES

SEMICONDUCTOR DEVICE WITH MULTIPLE CHANNELS AND METHOD OF FABRICATI...

Heterogeneous Group IV Semiconductor Substrates

SEMICONDUCTOR DEVICE EMPLOYING BURIED INSULATING LAYER AND METHOD O...

Single electron transistor and method of manufacturing the same

INTEGRATED CIRCUIT DEVICES HAVING AN EPITAXIAL PATTERN WITH A VOID...