Kyoung-Woo Lee

Person

Fishkill, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor wafer having embedded electroplating current paths to...
- Patent number 7,586,175
- Issue date Sep 8, 2009
- Samsung Electronics Co., Ltd.
- Kyoung Woo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming integrated circuit devices having metal intercon...
- Patent number 7,435,673
- Issue date Oct 14, 2008
- Samsung Electronics Co., Ltd.
- Kyoung Woo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Physical vapor deposition methods for forming hydrogen-stuffed tren...
- Patent number 7,387,962
- Issue date Jun 17, 2008
- Samsung Electronics Co., Ltd.
- Kyoung-Woo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming dual-damascene interconnect structures on semico...
- Patent number 7,365,025
- Issue date Apr 29, 2008
- Samsung Electronics Co., Ltd.
- Kyoung-Woo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming integrated circuit devices having metal intercon...
- Patent number 7,282,451
- Issue date Oct 16, 2007
- Samsung Electronics Co., Ltd.
- Duk Ho Hong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR FORMING DUAL DAMASCENE WIRING USING POROGEN CONTAINING...
- Publication number 20090075474
- Publication date Mar 19, 2009
- Kyoung Woo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER HAVING EMBEDDED ELECTROPLATING CURRENT PATHS TO...
- Publication number 20080093746
- Publication date Apr 24, 2008
- Kyoung Woo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming copper vias with argon sputtering etching in dua...
- Publication number 20070202689
- Publication date Aug 30, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Seung-Man Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming dual-damascene interconnect structures on semico...
- Publication number 20070184649
- Publication date Aug 9, 2007
- Kyoung-Woo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Physical vapor deposition methods for forming hydrogen-stuffed tren...
- Publication number 20070087567
- Publication date Apr 19, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Kyoung-Woo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming integrated circuit devices having metal intercon...
- Publication number 20070072406
- Publication date Mar 29, 2007
- Kyoung Woo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming integrated circuit devices having metal intercon...
- Publication number 20070045123
- Publication date Mar 1, 2007
- Duk Ho Hong
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Methods for forming dual damascene wiring using porogen containing...
- Publication number 20060121721
- Publication date Jun 8, 2006
- SAMSUNG ELECTRONICS CO., LTD.
- Kyoung Woo Lee
- H01 - BASIC ELECTRIC ELEMENTS

Kyoung-Woo Lee

Person

Patents Grantslast 30 patents

Semiconductor wafer having embedded electroplating current paths to...

Methods of forming integrated circuit devices having metal intercon...

Physical vapor deposition methods for forming hydrogen-stuffed tren...

Methods of forming dual-damascene interconnect structures on semico...

Methods of forming integrated circuit devices having metal intercon...

Patents Applicationslast 30 patents

METHODS FOR FORMING DUAL DAMASCENE WIRING USING POROGEN CONTAINING...

SEMICONDUCTOR WAFER HAVING EMBEDDED ELECTROPLATING CURRENT PATHS TO...

Methods of forming copper vias with argon sputtering etching in dua...

Methods of forming dual-damascene interconnect structures on semico...

Physical vapor deposition methods for forming hydrogen-stuffed tren...

Methods of forming integrated circuit devices having metal intercon...

Methods of forming integrated circuit devices having metal intercon...

Methods for forming dual damascene wiring using porogen containing...