Kyuha Shim

Person

Andover, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Ion implantation to reduce nanosheet gate length variation
- Patent number 11,955,533
- Issue date Apr 9, 2024
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for improved low dielectric constant film processing
- Patent number 11,756,796
- Issue date Sep 12, 2023
- Applied Materials, Inc.
- Rajesh Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and technique for profile modulation using high tilt angles
- Patent number 11,551,904
- Issue date Jan 10, 2023
- Applied Materials, Inc.
- Venkataramana R. Chavva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation to reduce nanosheet gate length variation
- Patent number 11,430,877
- Issue date Aug 30, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming low stress mask using implantation
- Patent number 10,515,802
- Issue date Dec 24, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Rajesh Prasad
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
IMPLANT INTO EUV METAL OXIDE PHOTORESIST MODULE TO REDUCE EUV DOSE
- Publication number 20240379376
- Publication date Nov 14, 2024
- Applied Materials, Inc.
- Rajesh Prasad
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS FOR OXIDIZING A SILICON HARDMASK USING ION IMPLANT
- Publication number 20230268188
- Publication date Aug 24, 2023
- Applied Materials, Inc.
- Sungho Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR IMPROVED LOW DIELECTRIC CONSTANT FILM PROCESSING
- Publication number 20220367205
- Publication date Nov 17, 2022
- Applied Materials, Inc.
- Rajesh Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION
- Publication number 20220359723
- Publication date Nov 10, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCALIZED STRESS MODULATION BY IMPLANT TO BACK OF WAFER
- Publication number 20220344171
- Publication date Oct 27, 2022
- Applied Materials, Inc.
- Sony Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION
- Publication number 20220157968
- Publication date May 19, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System And Technique For Profile Modulation Using High Tilt Angles
- Publication number 20220076915
- Publication date Mar 10, 2022
- Applied Materials, Inc.
- Venkataramana R. Chavva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FORMING LOW STRESS MASK USING IMPLANTATION
- Publication number 20190326116
- Publication date Oct 24, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Rajesh Prasad
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Ion implantation to reduce nanosheet gate length variation

Techniques for improved low dielectric constant film processing

System and technique for profile modulation using high tilt angles

Ion implantation to reduce nanosheet gate length variation

Techniques for forming low stress mask using implantation

Patents Applicationslast 30 patents

IMPLANT INTO EUV METAL OXIDE PHOTORESIST MODULE TO REDUCE EUV DOSE

METHODS FOR OXIDIZING A SILICON HARDMASK USING ION IMPLANT

TECHNIQUES FOR IMPROVED LOW DIELECTRIC CONSTANT FILM PROCESSING

ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION

LOCALIZED STRESS MODULATION BY IMPLANT TO BACK OF WAFER

ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION

System And Technique For Profile Modulation Using High Tilt Angles

TECHNIQUES FOR FORMING LOW STRESS MASK USING IMPLANTATION