Lahir S. Adam

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Wappingers Falls, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Method for improving device performance using epitaxially grown sil...
- Patent number 9,331,174
- Issue date May 3, 2016
- GLOBALFOUNDRIES Inc.
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress memorization process improvement for improved technology per...
- Patent number 8,535,999
- Issue date Sep 17, 2013
- International Business Machines Corporation
- Lahir Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of CMOS transistors having differentially stressed spacers
- Patent number 8,372,705
- Issue date Feb 12, 2013
- International Business Machines Corporation
- Lahir Shaik Adam
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CMOS TRANSISTORS HAVING DIFFERENTIALLY STRESSED SPACERS
- Publication number 20130134523
- Publication date May 30, 2013
- International Business Machines Corporation
- LAHIR S. ADAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF CMOS TRANSISTORS HAVING DIFFERENTIALLY STRESSED SPACERS
- Publication number 20120187482
- Publication date Jul 26, 2012
- International Business Machines Corporation
- Lahir S. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS MEMORIZATION PROCESS IMPROVEMENT FOR IMPROVED TECHNOLOGY PER...
- Publication number 20120086071
- Publication date Apr 12, 2012
- International Business Machines Corporation
- Lahir Shaik Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH STRESSED CHANNEL
- Publication number 20110031503
- Publication date Feb 10, 2011
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS