Larissa Wehrhahn-Kilian

Person

Erlangen, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide device with Schottky contact
- Patent number 11,380,756
- Issue date Jul 5, 2022
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including junction material in a trench and ma...
- Patent number 11,322,596
- Issue date May 3, 2022
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor component
- Patent number 11,177,380
- Issue date Nov 16, 2021
- Infineon Technologies AG
- Larissa Wehrhahn-Kilian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor component with edge termination struc...
- Patent number 11,145,755
- Issue date Oct 12, 2021
- Infineon Technologies AG
- Larissa Wehrhahn-Kilian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor component
- Patent number 11,063,144
- Issue date Jul 13, 2021
- Infineon Technologies AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with junction termination zone
- Patent number 10,861,964
- Issue date Dec 8, 2020
- Infineon Technologies AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with termination structure including field zon...
- Patent number 10,541,325
- Issue date Jan 21, 2020
- Infineon Technologies AG
- Rudolf Elpelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor component having a shielding structure
- Patent number 8,102,012
- Issue date Jan 24, 2012
- Infineon Technologies Austria AG
- Dethard Peters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making an integrated circuit including vertical junction...
- Patent number 7,763,506
- Issue date Jul 27, 2010
- Infineon Technologies Austria AG
- Michael Treu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DIE WITH A SILICON CARBIDE SUBSTRATE
- Publication number 20250022918
- Publication date Jan 16, 2025
- INFINEON TECHNOLOGIES AG
- Christian HECHT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH SCHOTTKY CONTACT
- Publication number 20200219972
- Publication date Jul 9, 2020
- INFINEON TECHNOLOGIES AG
- Caspar LEENDERTZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING JUNCTION MATERIAL IN A TRENCH AND MA...
- Publication number 20200066857
- Publication date Feb 27, 2020
- INFINEON TECHNOLOGIES AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component
- Publication number 20190296143
- Publication date Sep 26, 2019
- Larissa Wehrhahn-Kilian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component
- Publication number 20190296141
- Publication date Sep 26, 2019
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component with Edge Termination Struc...
- Publication number 20190165159
- Publication date May 30, 2019
- Larissa Wehrhahn-Kilian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Termination Structure Including Field Zon...
- Publication number 20190131447
- Publication date May 2, 2019
- INFINEON TECHNOLOGIES AG
- Rudolf Elpelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Junction Termination Zone
- Publication number 20190131446
- Publication date May 2, 2019
- INFINEON TECHNOLOGIES AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR COMPONENT HAVING A SHIELDING STRUCTURE
- Publication number 20100264467
- Publication date Oct 21, 2010
- Infineon Technologies Austria AG
- Dethard Peters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING AN INTEGRATED CIRCUIT INCLUDING VERTICAL JUNCTION...
- Publication number 20090068803
- Publication date Mar 12, 2009
- Infineon Technologies Austria AG
- Michael Treu
- H01 - BASIC ELECTRIC ELEMENTS

Larissa Wehrhahn-Kilian

Person

Patents Grantslast 30 patents

Silicon carbide device with Schottky contact

Semiconductor device including junction material in a trench and ma...

Silicon carbide semiconductor component

Silicon carbide semiconductor component with edge termination struc...

Silicon carbide semiconductor component

Semiconductor device with junction termination zone

Semiconductor device with termination structure including field zon...

Transistor component having a shielding structure

Method for making an integrated circuit including vertical junction...

Patents Applicationslast 30 patents

SEMICONDUCTOR DIE WITH A SILICON CARBIDE SUBSTRATE

SILICON CARBIDE DEVICE WITH SCHOTTKY CONTACT

SEMICONDUCTOR DEVICE INCLUDING JUNCTION MATERIAL IN A TRENCH AND MA...

Silicon Carbide Semiconductor Component

Silicon Carbide Semiconductor Component

Silicon Carbide Semiconductor Component with Edge Termination Struc...

Semiconductor Device with Termination Structure Including Field Zon...

Semiconductor Device with Junction Termination Zone

TRANSISTOR COMPONENT HAVING A SHIELDING STRUCTURE

METHOD FOR MAKING AN INTEGRATED CIRCUIT INCLUDING VERTICAL JUNCTION...