Larry Zhao

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Dielectric barrier layer for a copper metallization layer having a...
- Patent number 7,381,660
- Issue date Jun 3, 2008
- Advanced Micro Devices, Inc.
- Larry Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cu capping layer deposition with improved integrated circuit reliab...
- Patent number 6,897,144
- Issue date May 24, 2005
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of selectively alloying interconnect regions by deposition p...
- Patent number 6,656,834
- Issue date Dec 2, 2003
- Advanced Micro Devices, Inc.
- Paul R. Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of selectively alloying interconnect regions by ion implanta...
- Patent number 6,633,085
- Issue date Oct 14, 2003
- Advanced Micro Devices, Inc.
- Paul R. Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and test structure for characterizing sidewall damage in a s...
- Patent number 6,600,333
- Issue date Jul 29, 2003
- Advanced Micro Devices, Inc.
- Jeremy I. Martin
- G01 - MEASURING TESTING
Information Patent Grant
Method of forming nitride capped Cu lines with reduced electromigra...
- Patent number 6,429,128
- Issue date Aug 6, 2002
- Advanced Micro Devices, Inc.
- Paul Raymond Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse electroplating of barrier metal layer to improve electromig...
- Patent number 6,261,963
- Issue date Jul 17, 2001
- Advanced Micro Devices, Inc.
- Larry Zhao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Dielectric barrier layer for a copper metallization layer having a...
- Publication number 20040152333
- Publication date Aug 5, 2004
- Larry Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of reducing voiding in copper interconnects with copper allo...
- Publication number 20040061237
- Publication date Apr 1, 2004
- Advanced Micro Devices, Inc.
- Larry Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SELECTIVELY ALLOYING INTERCONNECT REGIONS BY DEPOSITION P...
- Publication number 20030216029
- Publication date Nov 20, 2003
- Advanced Micro Devices, Inc.
- Paul R. Besser
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Dielectric barrier layer for a copper metallization layer having a...

Cu capping layer deposition with improved integrated circuit reliab...

Method of selectively alloying interconnect regions by deposition p...

Method of selectively alloying interconnect regions by ion implanta...

Method and test structure for characterizing sidewall damage in a s...

Method of forming nitride capped Cu lines with reduced electromigra...

Reverse electroplating of barrier metal layer to improve electromig...

Patents Applicationslast 30 patents

Dielectric barrier layer for a copper metallization layer having a...

Method of reducing voiding in copper interconnects with copper allo...

METHOD OF SELECTIVELY ALLOYING INTERCONNECT REGIONS BY DEPOSITION P...