Larry Zhao

Person

Lake Oswego, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a self-forming barrier layer at via bottom
- Patent number RE49820
- Issue date Jan 30, 2024
- GLOBALFOUNDRIES U.S. INC.
- Larry Zhao
Information Patent Grant
Semiconductor device having a self-forming barrier layer at via bottom
- Patent number RE47630
- Issue date Oct 1, 2019
- GLOBALFOUNDRIES Inc.
- Larry Zhao
Information Patent Grant
Interlevel conductor pre-fill utilizing selective barrier deposition
- Patent number 10,262,943
- Issue date Apr 16, 2019
- Lam Research Corporation
- Artur Kolics
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Interlevel conductor pre-fill utilizing selective barrier deposition
- Patent number 9,875,968
- Issue date Jan 23, 2018
- Lam Research Corporation
- Artur Kolics
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electro-migration enhancing method for self-forming barrier process...
- Patent number 9,666,524
- Issue date May 30, 2017
- GLOBALFOUNDRIES Inc.
- Moosung Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interlevel conductor pre-fill utilizing selective barrier deposition
- Patent number 9,583,386
- Issue date Feb 28, 2017
- Lam Research Corporation
- Artur Kolics
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integrated circuits including selectively deposited metal capping l...
- Patent number 9,484,252
- Issue date Nov 1, 2016
- GLOBALFOUNDRIES, INC.
- Moosung Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of producing integrated circuits with an air gap
- Patent number 9,431,294
- Issue date Aug 30, 2016
- GLOBALFOUNDRIES, INC.
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electro-migration enhancing method for self-forming barrier process...
- Patent number 9,362,228
- Issue date Jun 7, 2016
- GLOBALFOUNDRIES Inc.
- Moosung Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using electroless deposition as a metrology tool to highlight conta...
- Patent number 9,287,183
- Issue date Mar 15, 2016
- Lam Research Corporation
- Larry Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid manganese and manganese nitride barriers for back-end-of-lin...
- Patent number 9,159,610
- Issue date Oct 13, 2015
- GLOBALFOUNDIRES, INC.
- Xunyuan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electroless fill of trench in semiconductor structure
- Patent number 9,087,881
- Issue date Jul 21, 2015
- GLOBALFOUNDRIES Inc.
- Sean X. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for integration of pore stuffing material
- Patent number 9,054,052
- Issue date Jun 9, 2015
- Global Foundries Inc.
- Nicholas Vincent Licausi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a self-forming barrier layer at via bottom
- Patent number 8,907,483
- Issue date Dec 9, 2014
- GLOBALFOUNDRIES Inc.
- Larry Zhao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Interlevel Conductor Pre-Fill Utilizing Selective Barrier Deposition
- Publication number 20180151503
- Publication date May 31, 2018
- LAM RESEARCH CORPORATION
- Artur Kolics
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interlevel Conductor Pre-Fill Utilizing Selective Barrier Deposition
- Publication number 20170162512
- Publication date Jun 8, 2017
- LAM RESEARCH CORPORATION
- Artur Kolics
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRO-MIGRATION ENHANCING METHOD FOR SELF-FORMING BARRIER PROCESS...
- Publication number 20160225712
- Publication date Aug 4, 2016
- GLOBALFOUNDRIES INC.
- Moosung CHAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH AN AIR GAP AND METHODS OF PRODUCING THE SAME
- Publication number 20160118292
- Publication date Apr 28, 2016
- GLOBALFOUNDRIES, Inc.
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interlevel Conductor Pre-Fill Utilizing Selective Barrier Deposition
- Publication number 20160118296
- Publication date Apr 28, 2016
- LAM RESEARCH CORPORATION
- Artur Kolics
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-FORMING BARRIER INTEGRATED WITH SELF-ALIGNED CAP
- Publication number 20150228585
- Publication date Aug 13, 2015
- GLOBALFOUNDRIES INC.
- Ming HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS INCLUDING SELECTIVELY DEPOSITED METAL CAPPING L...
- Publication number 20150194344
- Publication date Jul 9, 2015
- GLOBAL FOUNDRIES, INC.
- Moosung Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRO-MIGRATION ENHANCING METHOD FOR SELF-FORMING BARRIER PROCESS...
- Publication number 20150108646
- Publication date Apr 23, 2015
- GLOBALFOUNDRIES INC.
- Moosung CHAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID MANGANESE AND MANGANESE NITRIDE BARRIERS FOR BACK-END-OF-LIN...
- Publication number 20150108647
- Publication date Apr 23, 2015
- GLOBALFOUNDRIES, Inc.
- Xunyuan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF SEMICONDUCTOR CONTAMINANT REMOVAL USING SUPERCRITICAL FLUID
- Publication number 20140353805
- Publication date Dec 4, 2014
- GLOBALFOUNDRIES INC.
- Errol Todd RYAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR INTEGRATION OF PORE STUFFING MATERIAL
- Publication number 20140353802
- Publication date Dec 4, 2014
- GLOBALFOUNDRIES INC.
- Nicholas Vincent LICAUSI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROLESS FILL OF TRENCH IN SEMICONDUCTOR STRUCTURE
- Publication number 20140252616
- Publication date Sep 11, 2014
- Sean X. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SELF-FORMING BARRIER LAYER AT VIA BOTTOM
- Publication number 20140097538
- Publication date Apr 10, 2014
- GLOBALFOUNDRIES Inc.
- Larry Zhao
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Semiconductor device having a self-forming barrier layer at via bottom

Semiconductor device having a self-forming barrier layer at via bottom

Interlevel conductor pre-fill utilizing selective barrier deposition

Interlevel conductor pre-fill utilizing selective barrier deposition

Electro-migration enhancing method for self-forming barrier process...

Interlevel conductor pre-fill utilizing selective barrier deposition

Integrated circuits including selectively deposited metal capping l...

Methods of producing integrated circuits with an air gap

Electro-migration enhancing method for self-forming barrier process...

Using electroless deposition as a metrology tool to highlight conta...

Hybrid manganese and manganese nitride barriers for back-end-of-lin...

Electroless fill of trench in semiconductor structure

Methods for integration of pore stuffing material

Semiconductor device having a self-forming barrier layer at via bottom

Patents Applicationslast 30 patents

Interlevel Conductor Pre-Fill Utilizing Selective Barrier Deposition

Interlevel Conductor Pre-Fill Utilizing Selective Barrier Deposition

ELECTRO-MIGRATION ENHANCING METHOD FOR SELF-FORMING BARRIER PROCESS...

INTEGRATED CIRCUITS WITH AN AIR GAP AND METHODS OF PRODUCING THE SAME

Interlevel Conductor Pre-Fill Utilizing Selective Barrier Deposition

SELF-FORMING BARRIER INTEGRATED WITH SELF-ALIGNED CAP

INTEGRATED CIRCUITS INCLUDING SELECTIVELY DEPOSITED METAL CAPPING L...

ELECTRO-MIGRATION ENHANCING METHOD FOR SELF-FORMING BARRIER PROCESS...

HYBRID MANGANESE AND MANGANESE NITRIDE BARRIERS FOR BACK-END-OF-LIN...

METHODS OF SEMICONDUCTOR CONTAMINANT REMOVAL USING SUPERCRITICAL FLUID

METHODS FOR INTEGRATION OF PORE STUFFING MATERIAL

ELECTROLESS FILL OF TRENCH IN SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR DEVICE HAVING A SELF-FORMING BARRIER LAYER AT VIA BOTTOM