Laurent Grenouillet

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Albany, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing a fin MOS transistor
- Patent number 9,673,329
- Issue date Jun 6, 2017
- STMicroelectronics S.A.
- Yves Morand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniaxially-strained FD-SOI finFET
- Patent number 9,466,664
- Issue date Oct 11, 2016
- STMicroelectronics, Inc.
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniaxially-strained FD-SOI finFET
- Patent number 9,252,208
- Issue date Feb 2, 2016
- STMicroelectronics, Inc.
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a fin MOS transistor
- Patent number 9,236,478
- Issue date Jan 12, 2016
- STMicroelectronics S.A.
- Yves Morand
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
UNIAXIALLY-STRAINED FD-SOI FINFET
- Publication number 20160133692
- Publication date May 12, 2016
- STMicroelectronics, Inc.
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A FIN MOS TRANSISTOR
- Publication number 20160087092
- Publication date Mar 24, 2016
- STMicroelectronics S.A.
- Yves Morand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIAXIALLY-STRAINED FD-SOI FINFET
- Publication number 20160035820
- Publication date Feb 4, 2016
- STMicroelectronics, Inc.
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A FIN MOS TRANSISTOR
- Publication number 20140246723
- Publication date Sep 4, 2014
- Commissariat a I'Energie Atomique et aux Energies Alternatives
- YVES MORAND
- H01 - BASIC ELECTRIC ELEMENTS