Lawrence D. Wong

Person

Beaverton, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Metallic sealants in transistor arrangements
- Patent number 11,522,059
- Issue date Dec 6, 2022
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact stacks to reduce hydrogen in thin film transistor
- Patent number 11,444,205
- Issue date Sep 13, 2022
- Intel Corporatiion
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon nanotube semiconductor devices and deterministic nanofabrica...
- Patent number 9,240,552
- Issue date Jan 19, 2016
- Intel Corporation
- Lawrence D. Wong
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Thin passivation layer on 3D devices
- Patent number 7,354,862
- Issue date Apr 8, 2008
- Intel Corporation
- Lawrence Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making semiconductor device using a novel interconnect cl...
- Patent number 7,214,594
- Issue date May 8, 2007
- Intel Corporation
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming dual metal complementary metal oxide semiconductor integrat...
- Patent number 7,192,856
- Issue date Mar 20, 2007
- Intel Corporation
- Mark Doczy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure in a microelectronic device including a bi-layer for a di...
- Patent number 7,164,206
- Issue date Jan 16, 2007
- Intel Corporation
- Grant Kloster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structural reinforcement of highly porous low k dielectric films by...
- Patent number 7,115,995
- Issue date Oct 3, 2006
- Intel Corporation
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-damascene interconnects without an etch stop layer by alternat...
- Patent number 6,992,391
- Issue date Jan 31, 2006
- Intel Corporation
- Andrew Ott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structural reinforcement of highly porous low k dielectric films by...
- Patent number 6,984,581
- Issue date Jan 10, 2006
- Intel Corporation
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma induced depletion of fluorine from surfaces of fluorinated l...
- Patent number 6,846,737
- Issue date Jan 25, 2005
- Intel Corporation
- Steven Towle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron-beam treated CDO films
- Patent number 6,734,533
- Issue date May 11, 2004
- Intel Corporation
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mechanically reinforced highly porous low dielectric constant films
- Patent number 6,703,324
- Issue date Mar 9, 2004
- Intel Corporation
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma induced depletion of fluorine from surfaces of fluorinated l...
- Patent number 6,593,650
- Issue date Jul 15, 2003
- Intel Corporation
- Steven Towle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stabilization of low dielectric constant film with in situ capping...
- Patent number 6,566,757
- Issue date May 20, 2003
- Intel Corporation
- Indrajit Banerjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of via patterning utilizing hard mask and stripping patterni...
- Patent number 6,472,315
- Issue date Oct 29, 2002
- Intel Corporation
- Phi L. Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming structural reinforcement of highly porous low k d...
- Patent number 6,432,811
- Issue date Aug 13, 2002
- Intel Corporation
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced surface modification of low K carbon-doped oxide
- Patent number 6,417,098
- Issue date Jul 9, 2002
- Intel Corporation
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device having a carbon doped oxid...
- Patent number 6,350,670
- Issue date Feb 26, 2002
- Intel Corporation
- Ebrahim Andideh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing carbon doped oxide insulating layers
- Patent number 6,316,063
- Issue date Nov 13, 2001
- Intel Corporation
- Ebrahim Andideh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Unique chemical mechanical planarization approach which utilizes ma...
- Patent number 6,284,091
- Issue date Sep 4, 2001
- Intel Corporation
- Lawrence D. Wong
- B24 - GRINDING POLISHING
Information Patent Grant
Unique chemical mechanical planarization approach which utilizes ma...
- Patent number 6,083,839
- Issue date Jul 4, 2000
- Intel Corporation
- Lawrence D. Wong
- B24 - GRINDING POLISHING
Information Patent Grant
Air gap based low dielectric constant interconnect structure and me...
- Patent number 6,057,226
- Issue date May 2, 2000
- Intel Corporation
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unique .alpha.-C:N:H/.alpha.-C:N.sub.x film liner/barrier to preven...
- Patent number 5,946,601
- Issue date Aug 31, 1999
- Intel Corporation
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METALLIC SEALANTS IN TRANSISTOR ARRANGEMENTS
- Publication number 20220406907
- Publication date Dec 22, 2022
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STACKS TO REDUCE HYDROGEN IN THIN FILM TRANSISTOR
- Publication number 20200098657
- Publication date Mar 26, 2020
- Arnab SEN GUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METALLIC SEALANTS IN TRANSISTOR ARRANGEMENTS
- Publication number 20190259844
- Publication date Aug 22, 2019
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON NANOTUBE SEMICONDUCTOR DEVICES AND DETERMINISTIC NANOFABRICA...
- Publication number 20140034906
- Publication date Feb 6, 2014
- KABUSHIKI KAISHA TOSHIBA
- Lawrence D. Wong
- B82 - NANO-TECHNOLOGY
Information Patent Application
Thin passivation layer on 3D devices
- Publication number 20080142991
- Publication date Jun 19, 2008
- Lawrence Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electron-beam treated CDO films
- Publication number 20070007628
- Publication date Jan 11, 2007
- Intel Corporation, a Delaware corporation
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electron-beam treated CDO films
- Publication number 20070009717
- Publication date Jan 11, 2007
- Intel Corporation, a Delaware corporation
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin passivation layer on 3D devices
- Publication number 20060234473
- Publication date Oct 19, 2006
- Lawrence Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming dual metal complementary metal oxide semiconductor integrat...
- Publication number 20060160342
- Publication date Jul 20, 2006
- Mark Doczy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual-damascene interconnects without an etch stop layer by alternat...
- Publication number 20050208753
- Publication date Sep 22, 2005
- Andrew Ott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mechanically reinforced highly porous low dielectric constant films
- Publication number 20040157436
- Publication date Aug 12, 2004
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making semiconductor devices using carbon nitride, a low-...
- Publication number 20040119163
- Publication date Jun 24, 2004
- Lawrence Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electron-beam treated CDO films
- Publication number 20030224593
- Publication date Dec 4, 2003
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making semiconductor device using a novel interconnect cl...
- Publication number 20030186535
- Publication date Oct 2, 2003
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making a semiconductor device using a damascene interconn...
- Publication number 20030173651
- Publication date Sep 18, 2003
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual-damascene interconnects without an etch stop layer by alternat...
- Publication number 20030064580
- Publication date Apr 3, 2003
- Andrew Ott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure in a microelectronic device including a bi-layer for a di...
- Publication number 20020140103
- Publication date Oct 3, 2002
- Grant Kloster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structural reinforcement of highly porous low k dielectric films by...
- Publication number 20020132468
- Publication date Sep 19, 2002
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mechanically reinforced highly porous low dielectric constant films
- Publication number 20020115285
- Publication date Aug 22, 2002
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structural reinforcement of highly porous low k dielectric films by...
- Publication number 20020079583
- Publication date Jun 27, 2002
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structural reinforcement of highly porous low k dielectric films by...
- Publication number 20020079585
- Publication date Jun 27, 2002
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURAL REINFORCEMENT OF HIGHLY POROUS LOW K DIELECTRIC FILMS BY...
- Publication number 20020074663
- Publication date Jun 20, 2002
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma induced depletion of fluorine from surfaces of fluorinated l...
- Publication number 20020063312
- Publication date May 30, 2002
- Steven Towle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Unique via patterning scheme which utilizes hard mask cap for low d...
- Publication number 20010016405
- Publication date Aug 23, 2001
- Phi L. Nguyen
- H01 - BASIC ELECTRIC ELEMENTS

Lawrence D. Wong

Person

Patents Grantslast 30 patents

Metallic sealants in transistor arrangements

Contact stacks to reduce hydrogen in thin film transistor

Carbon nanotube semiconductor devices and deterministic nanofabrica...

Thin passivation layer on 3D devices

Method of making semiconductor device using a novel interconnect cl...

Forming dual metal complementary metal oxide semiconductor integrat...

Structure in a microelectronic device including a bi-layer for a di...

Structural reinforcement of highly porous low k dielectric films by...

Dual-damascene interconnects without an etch stop layer by alternat...

Structural reinforcement of highly porous low k dielectric films by...

Plasma induced depletion of fluorine from surfaces of fluorinated l...

Electron-beam treated CDO films

Mechanically reinforced highly porous low dielectric constant films

Plasma induced depletion of fluorine from surfaces of fluorinated l...

Stabilization of low dielectric constant film with in situ capping...

Method of via patterning utilizing hard mask and stripping patterni...

Method of forming structural reinforcement of highly porous low k d...

Enhanced surface modification of low K carbon-doped oxide

Method for making a semiconductor device having a carbon doped oxid...

Method for preparing carbon doped oxide insulating layers

Unique chemical mechanical planarization approach which utilizes ma...

Unique chemical mechanical planarization approach which utilizes ma...

Air gap based low dielectric constant interconnect structure and me...

Unique .alpha.-C:N:H/.alpha.-C:N.sub.x film liner/barrier to preven...

Patents Applicationslast 30 patents

METALLIC SEALANTS IN TRANSISTOR ARRANGEMENTS

CONTACT STACKS TO REDUCE HYDROGEN IN THIN FILM TRANSISTOR

METALLIC SEALANTS IN TRANSISTOR ARRANGEMENTS

CARBON NANOTUBE SEMICONDUCTOR DEVICES AND DETERMINISTIC NANOFABRICA...

Thin passivation layer on 3D devices

Electron-beam treated CDO films

Electron-beam treated CDO films

Thin passivation layer on 3D devices

Forming dual metal complementary metal oxide semiconductor integrat...

Dual-damascene interconnects without an etch stop layer by alternat...

Mechanically reinforced highly porous low dielectric constant films

Method of making semiconductor devices using carbon nitride, a low-...

Electron-beam treated CDO films

Method of making semiconductor device using a novel interconnect cl...

Method of making a semiconductor device using a damascene interconn...

Dual-damascene interconnects without an etch stop layer by alternat...

Structure in a microelectronic device including a bi-layer for a di...

Structural reinforcement of highly porous low k dielectric films by...

Mechanically reinforced highly porous low dielectric constant films

Structural reinforcement of highly porous low k dielectric films by...

Structural reinforcement of highly porous low k dielectric films by...

STRUCTURAL REINFORCEMENT OF HIGHLY POROUS LOW K DIELECTRIC FILMS BY...

Plasma induced depletion of fluorine from surfaces of fluorinated l...

Unique via patterning scheme which utilizes hard mask cap for low d...