Lawrence Laterza

Person

Miller Pace, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Low-voltage punch-through bi-directional transient-voltage suppress...
- Patent number 6,602,769
- Issue date Aug 5, 2003
- General Semiconductor, Inc.
- Willem G. Einthoven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-voltage punch-through bi-directional transient-voltage suppress...
- Patent number 6,489,660
- Issue date Dec 3, 2002
- General Semiconductor, Inc.
- Willem G. Einthoven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chips having a mesa structure provided by sawing
- Patent number 5,882,986
- Issue date Mar 16, 1999
- General Semiconductor, Inc.
- Jack Eng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage silicon diode with optimum placement of silicon-german...
- Patent number 5,640,043
- Issue date Jun 17, 1997
- General Instrument Corporation of Delaware
- Jack Eng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a multilayer epitaxial structure
- Patent number 5,432,121
- Issue date Jul 11, 1995
- G. I. Corporation
- Joseph Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low cost method of fabricating epitaxial semiconductor devices
- Patent number 5,360,509
- Issue date Nov 1, 1994
- G. I. Corporation
- Gregory Zakaluk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing a semiconductor material by epilaxy
- Patent number 5,342,805
- Issue date Aug 30, 1994
- G. I. Corporation
- Joseph Y. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a multilayer epitaxial structure
- Patent number 5,324,685
- Issue date Jun 28, 1994
- Reinhold Hirtz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming high yield epitaxial wafers
- Patent number 4,659,400
- Issue date Apr 21, 1987
- General Instrument Corp.
- Danny Garbis
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Transient voltage suppressor having an epitaxial layer for higher a...
- Publication number 20040075160
- Publication date Apr 22, 2004
- Jack Eng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-voltage punch-through bi-directional transient-voltage suppress...
- Publication number 20030038340
- Publication date Feb 27, 2003
- Willem G. Einthoven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-VOLTAGE PUNCH-THROUGH BI-DIRECTIONAL TRANSIENT-VOLTAGE SUPPRESS...
- Publication number 20020175391
- Publication date Nov 28, 2002
- Willem G. Einthoven
- H01 - BASIC ELECTRIC ELEMENTS

Lawrence Laterza

Person

Patents Grantslast 30 patents

Low-voltage punch-through bi-directional transient-voltage suppress...

Low-voltage punch-through bi-directional transient-voltage suppress...

Semiconductor chips having a mesa structure provided by sawing

High voltage silicon diode with optimum placement of silicon-german...

Method for fabricating a multilayer epitaxial structure

Low cost method of fabricating epitaxial semiconductor devices

Method of growing a semiconductor material by epilaxy

Method for fabricating a multilayer epitaxial structure

Method for forming high yield epitaxial wafers

Patents Applicationslast 30 patents

Transient voltage suppressor having an epitaxial layer for higher a...

Low-voltage punch-through bi-directional transient-voltage suppress...

LOW-VOLTAGE PUNCH-THROUGH BI-DIRECTIONAL TRANSIENT-VOLTAGE SUPPRESS...