Lee-Wee Teo

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Polysilicon design for replacement gate technology
- Patent number 11,018,241
- Issue date May 25, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon design for replacement gate technology
- Patent number 10,658,492
- Issue date May 19, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon design for replacement gate technology
- Patent number 10,403,736
- Issue date Sep 3, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon design for replacement gate technology
- Patent number 10,084,061
- Issue date Sep 25, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon design for replacement gate technology
- Patent number 9,929,251
- Issue date Mar 27, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with partially unsilicided source/drain
- Patent number 9,780,180
- Issue date Oct 3, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon design for replacement gate technology
- Patent number 9,679,988
- Issue date Jun 13, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to stop contact metal from extruding into replacement gates
- Patent number 9,620,620
- Issue date Apr 11, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lee-Wee Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer structures of a semiconductor device
- Patent number 9,577,051
- Issue date Feb 21, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lee-Wee Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating hybrid impact-ionization semiconductor device
- Patent number 9,525,040
- Issue date Dec 20, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus of forming ESD protection device
- Patent number 9,478,633
- Issue date Oct 25, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a transistor using contact etch stop layers
- Patent number 9,412,841
- Issue date Aug 9, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lee-Wee Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with suppressed STI dishing effect at resis...
- Patent number 9,299,696
- Issue date Mar 29, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming laterally diffused metal oxide semiconductor tran...
- Patent number 9,231,084
- Issue date Jan 5, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced substrate coupling for inductors in semiconductor devices
- Patent number 9,196,611
- Issue date Nov 24, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit system with band to band tunneling and method of...
- Patent number 9,159,565
- Issue date Oct 13, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shyue Seng Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact etch stop layers of a field effect transistor
- Patent number 9,117,894
- Issue date Aug 25, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lee-Wee Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an interconnection structure in a CMOS compri...
- Patent number 9,105,692
- Issue date Aug 11, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Guan Chew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control gate
- Patent number 9,087,813
- Issue date Jul 21, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shyue Seng Tan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Laterally diffused metal oxide semiconductor transistor with partia...
- Patent number 8,981,495
- Issue date Mar 17, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit system employing resistance altering techniques
- Patent number 8,969,151
- Issue date Mar 3, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shyue Seng Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon design for replacement gate technology
- Patent number 8,890,260
- Issue date Nov 18, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor devices using stress engineering
- Patent number 8,836,036
- Issue date Sep 16, 2014
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shyue Seng Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for reducing gate resistance
- Patent number 8,836,035
- Issue date Sep 16, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving thermal stability of metal gate
- Patent number 8,835,294
- Issue date Sep 16, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Guan Chew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer structures of a semiconductor device
- Patent number RE45060
- Issue date Aug 5, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lee-Wee Teo
- 257 - Active solid-state devices
Information Patent Grant
Spacer structures of a semiconductor device
- Patent number 8,772,147
- Issue date Jul 8, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lee-Wee Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor top plate over source/drain to form a 1T memory device
- Patent number 8,716,081
- Issue date May 6, 2014
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lee Wee Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced substrate coupling for inductors in semiconductor devices
- Patent number 8,697,517
- Issue date Apr 15, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with suppressed STI dishing effect at resis...
- Patent number 8,691,673
- Issue date Apr 8, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Polysilicon Design for Replacement Gate Technology
- Publication number 20210288163
- Publication date Sep 16, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Polysilicon Design for Replacement Gate Technology
- Publication number 20200279935
- Publication date Sep 3, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Polysilicon Design for Replacement Gate Technology
- Publication number 20190386116
- Publication date Dec 19, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Polysilicon Design for Replacement Gate Technology
- Publication number 20190035914
- Publication date Jan 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Polysilicon Design for Replacement Gate Technology
- Publication number 20180212036
- Publication date Jul 26, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Polysilicon Design for Replacement Gate Technology
- Publication number 20170278948
- Publication date Sep 28, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH PARTIALLY UNSILICIDED SOURCE/DRAIN
- Publication number 20160087060
- Publication date Mar 24, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A TRANSISTOR USING CONTACT ETCH STOP LAYERS
- Publication number 20150333150
- Publication date Nov 19, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lee-Wee TEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR TRAN...
- Publication number 20150171191
- Publication date Jun 18, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON DESIGN FOR REPLACEMENT GATE TECHNOLOGY
- Publication number 20150132902
- Publication date May 14, 2015
- Taiwan Semiconductor Manufacturing Company Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BARRIER AND METHOD OF FORMATION THEREOF
- Publication number 20150008528
- Publication date Jan 8, 2015
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Shyue Seng TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER STRUCTURES OF A SEMICONDUCTOR DEVICE
- Publication number 20140299937
- Publication date Oct 9, 2014
- Lee-Wee TEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced Substrate Coupling for Inductors in Semiconductor Devices
- Publication number 20140203375
- Publication date Jul 24, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure with Suppressed STI Dishing Effect at Resis...
- Publication number 20140197496
- Publication date Jul 17, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING HYBRID IMPACT-IONIZATION SEMICONDUCTOR DEVICE
- Publication number 20140170820
- Publication date Jun 19, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR TRANSISTOR WITH PARTI...
- Publication number 20140159139
- Publication date Jun 12, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROL GATE
- Publication number 20140151775
- Publication date Jun 5, 2014
- GLOBAL FOUNDRIES SINGAPORE PTE LTD.
- Shyue Seng TAN
- B82 - NANO-TECHNOLOGY
Information Patent Application
INTERCONNECTION STRUCTURE FOR N/P METAL GATES
- Publication number 20140045328
- Publication date Feb 13, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Guan Chew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Apparatus of Forming ESD Protection Device
- Publication number 20140038376
- Publication date Feb 6, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER STRUCTURES OF A SEMICONDUCTOR DEVICE
- Publication number 20140017886
- Publication date Jan 16, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lee-Wee TEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS TO STOP CONTACT METAL FROM EXTRUDING INTO REPLACEMENT GATES
- Publication number 20130323919
- Publication date Dec 5, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lee-Wee TEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT ETCH STOP LAYERS OF A FIELD EFFECT TRANSISTOR
- Publication number 20130228834
- Publication date Sep 5, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lee-Wee TEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BARRIER AND METHOD OF FORMATION THEREOF
- Publication number 20130087889
- Publication date Apr 11, 2013
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Shyue Seng TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER STRUCTURES OF A SEMICONDUCTOR DEVICE
- Publication number 20130029482
- Publication date Jan 31, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lee-Wee TEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECTION STRUCTURE FOR N/P METAL GATES
- Publication number 20130012011
- Publication date Jan 10, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Guan Chew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH SUPPRESSED STI DISHING EFFECT AT RESIS...
- Publication number 20120299115
- Publication date Nov 29, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING SILICON RESISTOR AND METHOD OF FORMING TH...
- Publication number 20120292739
- Publication date Nov 22, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE BY THINNING HARDMASK LAY...
- Publication number 20120083095
- Publication date Apr 5, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Guan Chew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE STRUCTURE OF A SEMICONDUCTOR DEVICE
- Publication number 20120074475
- Publication date Mar 29, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Guan CHEW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT ETCH STOP LAYERS OF A FIELD EFFECT TRANSISTOR
- Publication number 20120032238
- Publication date Feb 9, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lee-Wee TEO
- H01 - BASIC ELECTRIC ELEMENTS

Lee-Wee Teo

Person

Patents Grantslast 30 patents

Polysilicon design for replacement gate technology

Polysilicon design for replacement gate technology

Polysilicon design for replacement gate technology

Polysilicon design for replacement gate technology

Polysilicon design for replacement gate technology

Semiconductor device with partially unsilicided source/drain

Polysilicon design for replacement gate technology

Methods to stop contact metal from extruding into replacement gates

Spacer structures of a semiconductor device

Method of fabricating hybrid impact-ionization semiconductor device

Method and apparatus of forming ESD protection device

Method of fabricating a transistor using contact etch stop layers

Semiconductor structure with suppressed STI dishing effect at resis...

Method of forming laterally diffused metal oxide semiconductor tran...

Reduced substrate coupling for inductors in semiconductor devices

Integrated circuit system with band to band tunneling and method of...

Contact etch stop layers of a field effect transistor

Method of fabricating an interconnection structure in a CMOS compri...

Control gate

Laterally diffused metal oxide semiconductor transistor with partia...

Integrated circuit system employing resistance altering techniques

Polysilicon design for replacement gate technology

Method for fabricating semiconductor devices using stress engineering

Method and apparatus for reducing gate resistance

Method for improving thermal stability of metal gate

Spacer structures of a semiconductor device

Spacer structures of a semiconductor device

Capacitor top plate over source/drain to form a 1T memory device

Reduced substrate coupling for inductors in semiconductor devices

Semiconductor structure with suppressed STI dishing effect at resis...

Patents Applicationslast 30 patents

Polysilicon Design for Replacement Gate Technology

Polysilicon Design for Replacement Gate Technology

Polysilicon Design for Replacement Gate Technology

Polysilicon Design for Replacement Gate Technology

Polysilicon Design for Replacement Gate Technology

Polysilicon Design for Replacement Gate Technology

SEMICONDUCTOR DEVICE WITH PARTIALLY UNSILICIDED SOURCE/DRAIN

METHOD OF FABRICATING A TRANSISTOR USING CONTACT ETCH STOP LAYERS

METHOD OF FORMING LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR TRAN...

POLYSILICON DESIGN FOR REPLACEMENT GATE TECHNOLOGY

DIFFUSION BARRIER AND METHOD OF FORMATION THEREOF

SPACER STRUCTURES OF A SEMICONDUCTOR DEVICE

Reduced Substrate Coupling for Inductors in Semiconductor Devices

Semiconductor Structure with Suppressed STI Dishing Effect at Resis...

METHOD OF FABRICATING HYBRID IMPACT-IONIZATION SEMICONDUCTOR DEVICE

LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR TRANSISTOR WITH PARTI...

CONTROL GATE

INTERCONNECTION STRUCTURE FOR N/P METAL GATES

Method and Apparatus of Forming ESD Protection Device

SPACER STRUCTURES OF A SEMICONDUCTOR DEVICE

METHODS TO STOP CONTACT METAL FROM EXTRUDING INTO REPLACEMENT GATES

CONTACT ETCH STOP LAYERS OF A FIELD EFFECT TRANSISTOR

DIFFUSION BARRIER AND METHOD OF FORMATION THEREOF

SPACER STRUCTURES OF A SEMICONDUCTOR DEVICE

INTERCONNECTION STRUCTURE FOR N/P METAL GATES

SEMICONDUCTOR STRUCTURE WITH SUPPRESSED STI DISHING EFFECT AT RESIS...

INTEGRATED CIRCUIT HAVING SILICON RESISTOR AND METHOD OF FORMING TH...

METHOD OF FABRICATING SEMICONDUCTOR DEVICE BY THINNING HARDMASK LAY...

METAL GATE STRUCTURE OF A SEMICONDUCTOR DEVICE

CONTACT ETCH STOP LAYERS OF A FIELD EFFECT TRANSISTOR