Len-Yuan Tsou

Person

New York, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device manufacturing methods
- Patent number 8,697,339
- Issue date Apr 15, 2014
- International Business Machines Corporation
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor inter-field dose correction
- Patent number 8,219,938
- Issue date Jul 10, 2012
- Samsung Electronics Co., Ltd.
- Hyung-Rae Lee
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Semiconductor device manufacturing methods
- Patent number 7,759,235
- Issue date Jul 20, 2010
- Infineon Technologies AG
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming mask patterns on semiconductor wafers that compe...
- Patent number 7,541,290
- Issue date Jun 2, 2009
- Samsung Electronics Co., Ltd.
- Chong Kwang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making sub-lithographic features
- Patent number 6,960,510
- Issue date Nov 1, 2005
- International Business Machines Corporation
- Sadanand V. Deshpande
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase etch trim structure with top etch blocking layer
- Patent number 6,884,734
- Issue date Apr 26, 2005
- International Business Machines Corporation
- Frederick W. Buehrer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate linewidth tailoring and critical dimension control for sub-100...
- Patent number 6,864,041
- Issue date Mar 8, 2005
- International Business Machines Corporation
- Jeffrey J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for uniform reactive ion etching of dual pre-doped polysilic...
- Patent number 6,828,187
- Issue date Dec 7, 2004
- International Business Machines Corporation
- Joyce C. Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form gate conductor structures of dual doped polysilicon
- Patent number 6,703,269
- Issue date Mar 9, 2004
- International Business Machines Corporation
- Jeffrey J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of notched gates by passivating partially etched gate s...
- Patent number 6,528,363
- Issue date Mar 4, 2003
- International Business Machines Corporation
- Victor Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of notched gates by passivating partially etched gate s...
- Patent number 6,509,219
- Issue date Jan 21, 2003
- International Business Machines Corporation
- Len Y. Tsou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Universal cleaning wafer for a plasma chamber
- Patent number 6,328,041
- Issue date Dec 11, 2001
- International Business Machines Corporation
- Jeffrey J. Brown
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Electrically erasable and programmable read only memory with non-un...
- Patent number 5,606,521
- Issue date Feb 25, 1997
- Philips Electronics North America Corp.
- Di-Son Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reactive ion etching or indium tin oxide
- Patent number 5,286,337
- Issue date Feb 15, 1994
- North American Philips Corporation
- Len Y. Tsou
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Selective oxidation of silicon trench sidewall
- Patent number 5,240,875
- Issue date Aug 31, 1993
- North American Philips Corporation
- Len-Yuan Tsou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically erasable and programmable read only memory with trench...
- Patent number 5,146,426
- Issue date Sep 8, 1992
- North American Philips Corp.
- Satyendranath Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reactive ion etching of silicon with hydrogen bromide
- Patent number 5,007,982
- Issue date Apr 16, 1991
- North American Philips Corporation
- Len-Yan Tsou
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device Manufacturing Methods
- Publication number 20110183266
- Publication date Jul 28, 2011
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTER-FIELD DOSE CORRECTION
- Publication number 20110093823
- Publication date Apr 21, 2011
- Hyung-Rae Lee
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Semiconductor device manufacturing methods
- Publication number 20080305623
- Publication date Dec 11, 2008
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device manufacturing methods
- Publication number 20080286698
- Publication date Nov 20, 2008
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Mask Patterns on Semiconductor Wafers that Compe...
- Publication number 20080220609
- Publication date Sep 11, 2008
- Chong Kwang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process and system for etching doped silicon
- Publication number 20070056927
- Publication date Mar 15, 2007
- Len Y. Tsou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vapor phase etch trim structure with top etch blocking layer
- Publication number 20040198030
- Publication date Oct 7, 2004
- International Business Machines Corporation
- Frederick W. Buehrer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making sub-lithographic features
- Publication number 20040002203
- Publication date Jan 1, 2004
- International Business Machines Corporation
- Sadanand V. Deshpande
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to form gate conductor structures of dual doped polysilicon
- Publication number 20030186492
- Publication date Oct 2, 2003
- International Business Machines Corporation
- Jeffrey J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate linewidth tailoring and critical dimension control for sub-100...
- Publication number 20020164546
- Publication date Nov 7, 2002
- International Business Machines Corporation
- Jeffrey J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of notched gates by passivating partially etched gate s...
- Publication number 20020132437
- Publication date Sep 19, 2002
- International Business Machines Corporation
- Len Y. Tsou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of notched gates by passivating partially etched gate s...
- Publication number 20020132394
- Publication date Sep 19, 2002
- International Business Machines Corporation
- Victor Ku
- H01 - BASIC ELECTRIC ELEMENTS

Len-Yuan Tsou

Person

Patents Grantslast 30 patents

Semiconductor device manufacturing methods

Semiconductor inter-field dose correction

Semiconductor device manufacturing methods

Methods of forming mask patterns on semiconductor wafers that compe...

Method of making sub-lithographic features

Vapor phase etch trim structure with top etch blocking layer

Gate linewidth tailoring and critical dimension control for sub-100...

Method for uniform reactive ion etching of dual pre-doped polysilic...

Method to form gate conductor structures of dual doped polysilicon

Fabrication of notched gates by passivating partially etched gate s...

Fabrication of notched gates by passivating partially etched gate s...

Universal cleaning wafer for a plasma chamber

Electrically erasable and programmable read only memory with non-un...

Reactive ion etching or indium tin oxide

Selective oxidation of silicon trench sidewall

Electrically erasable and programmable read only memory with trench...

Reactive ion etching of silicon with hydrogen bromide

Patents Applicationslast 30 patents

Semiconductor Device Manufacturing Methods

SEMICONDUCTOR INTER-FIELD DOSE CORRECTION

Semiconductor device manufacturing methods

Semiconductor device manufacturing methods

Methods of Forming Mask Patterns on Semiconductor Wafers that Compe...

Process and system for etching doped silicon

Vapor phase etch trim structure with top etch blocking layer

Method of making sub-lithographic features

Method to form gate conductor structures of dual doped polysilicon

Gate linewidth tailoring and critical dimension control for sub-100...

Fabrication of notched gates by passivating partially etched gate s...

Fabrication of notched gates by passivating partially etched gate s...