Leonard C. Pipes

Person

Beaverton, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Channel formation for three dimensional transistors
- Patent number 11,810,980
- Issue date Nov 7, 2023
- Intel Corporation
- Chieh-Jen Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation gap filling process for embedded dram using spacer material
- Patent number 11,784,088
- Issue date Oct 10, 2023
- Intel Corporation
- Chieh-Jen Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation in integrated circuit devices
- Patent number 11,270,995
- Issue date Mar 8, 2022
- Intel Corporation
- Sang-Won Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation structures having uniform and smooth topog...
- Patent number 7,061,068
- Issue date Jun 13, 2006
- Intel Corporation
- Leonard C. Pipes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implanting ions in shallow trench isolation structures
- Patent number 6,713,385
- Issue date Mar 30, 2004
- Intel Corporation
- Leonard C. Pipes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extension of shallow trench isolation by ion implantation
- Patent number 6,590,271
- Issue date Jul 8, 2003
- Intel Corporation
- Mark Y. Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extension of shallow trench isolation by ion implantation
- Patent number 6,432,798
- Issue date Aug 13, 2002
- Intel Corporation
- Mark Y. Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIN DOPING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM
- Publication number 20220310601
- Publication date Sep 29, 2022
- Intel Corporation
- Aaron D. LILAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION IN INTEGRATED CIRCUIT DEVICES
- Publication number 20220139913
- Publication date May 5, 2022
- Intel Corporation
- Sang-Won Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL FORMATION FOR THREE DIMENSIONAL TRANSISTORS
- Publication number 20200411697
- Publication date Dec 31, 2020
- Intel Corporation
- Chieh-Jen KU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION GAP FILLING PROCESS FOR EMBEDDED DRAM USING SPACER MATERIAL
- Publication number 20200243376
- Publication date Jul 30, 2020
- Intel Corporation
- Chieh-Jen KU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION IN INTEGRATED CIRCUIT DEVICES
- Publication number 20200126980
- Publication date Apr 23, 2020
- Intel Corporation
- Sang-Won Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a MOSFET transistor having an anti-halo for m...
- Publication number 20070145495
- Publication date Jun 28, 2007
- Intel Corporation
- Giuseppe Curello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Implantating ions in shallow trench isolation structures
- Publication number 20040155341
- Publication date Aug 12, 2004
- Leonard C. Pipes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Extension of shallow trench isolation by ion implantation
- Publication number 20020037627
- Publication date Mar 28, 2002
- Mark Y. Liu
- H01 - BASIC ELECTRIC ELEMENTS

Leonard C. Pipes

Person

Patents Grantslast 30 patents

Channel formation for three dimensional transistors

Isolation gap filling process for embedded dram using spacer material

Isolation in integrated circuit devices

Shallow trench isolation structures having uniform and smooth topog...

Implanting ions in shallow trench isolation structures

Extension of shallow trench isolation by ion implantation

Extension of shallow trench isolation by ion implantation

Patents Applicationslast 30 patents

FIN DOPING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM

ISOLATION IN INTEGRATED CIRCUIT DEVICES

CHANNEL FORMATION FOR THREE DIMENSIONAL TRANSISTORS

ISOLATION GAP FILLING PROCESS FOR EMBEDDED DRAM USING SPACER MATERIAL

ISOLATION IN INTEGRATED CIRCUIT DEVICES

Method of fabricating a MOSFET transistor having an anti-halo for m...

Implantating ions in shallow trench isolation structures

Extension of shallow trench isolation by ion implantation