Leonard Cecil Feldman

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Nashville, TN, US

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices including polar insulation layer capped by no...
- Patent number 9,362,367
- Issue date Jun 7, 2016
- Auburn University
- John R. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including polar insulation layer capped by no...
- Patent number 9,117,817
- Issue date Aug 25, 2015
- Auburn University
- John R. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inclusion of nitrogen at the silicon dioxide-silicon carbide interf...
- Patent number 7,727,340
- Issue date Jun 1, 2010
- Vanderbilt University
- Gilyong Y. Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inclusion of nitrogen at the silicon dioxide-silicon carbide interf...
- Patent number 7,235,438
- Issue date Jun 26, 2007
- Vanderbilt University
- Gilyong Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inclusion of nitrogen at the silicon dioxide-silicon carbide intera...
- Patent number 6,939,756
- Issue date Sep 6, 2005
- Vanderbilt University
- Gilyong Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for device fabrication in which a layer of oxynitride is fo...
- Patent number 5,904,523
- Issue date May 18, 1999
- Lucent Technologies Inc.
- Leonard Cecil Feldman
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Devices Including Polar Insulation Layer Capped by No...
- Publication number 20150318358
- Publication date Nov 5, 2015
- John R. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices Including Polar Insulation Layer Capped By No...
- Publication number 20140077227
- Publication date Mar 20, 2014
- John R. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Inclusion of nitrogen at the silicon dioxide-silicon carbide interf...
- Publication number 20080128709
- Publication date Jun 5, 2008
- Vanderbilt University
- Gilyong Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Inclusion of nitrogen at the silicon dioxide-silicon carbide interf...
- Publication number 20060024978
- Publication date Feb 2, 2006
- Vanderbilt University
- Gilyong Y. Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices with small-scale channels and the fabrication thereof by et...
- Publication number 20050103713
- Publication date May 19, 2005
- J. Michael Ramsey
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
Nanostructured material transport devices and their fabrication by...
- Publication number 20050023156
- Publication date Feb 3, 2005
- J. Michael Ramsey
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL