Leonardo Ravazzi

Person

Dalmine, IT

People

Patents Grantslast 30 patents

Information Patent Grant
Flash EEPROM with integrated device for limiting the erase source v...
- Patent number 6,507,067
- Issue date Jan 14, 2003
- STMicroelectronics S.r.l.
- Lorenzo Fratin
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for localizing point defects causing leakage currents in a n...
- Patent number 6,369,406
- Issue date Apr 9, 2002
- STMicroelectronics S.r.l.
- Leonardo Ravazzi
- G11 - INFORMATION STORAGE
Information Patent Grant
Flow process for producing non-volatile memories with differentiate...
- Patent number 6,362,053
- Issue date Mar 26, 2002
- STMicroelectronics S.r.l.
- Leonardo Ravazzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for localizing point defects causing leakage c...
- Patent number 6,067,250
- Issue date May 23, 2000
- STMicroelectronics S.r.l.
- Leonardo Ravazzi
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making asymmetric nonvolatile memory cell
- Patent number 5,920,776
- Issue date Jul 6, 1999
- SGS-Thomson Microelectronics, S.r.l.
- Lorenzo Fratin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of evaluating the gate oxide of non-volatile EPROM, EEPROM a...
- Patent number 5,793,675
- Issue date Aug 11, 1998
- SGS Thomson Microelectronics S.r.l.
- Paolo Giuseppe Cappelletti
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Nonvolatile memory cell and a method for forming the same
- Patent number 5,712,814
- Issue date Jan 27, 1998
- SGS Thomson Microelectronics S.r.l.
- Lorenzo Fratin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for evaluating the dielectric layer of nonvolatile EPROM, EE...
- Patent number 5,712,816
- Issue date Jan 27, 1998
- SGS Thomson Microelectronics S.r.l.
- Paolo Giuseppe Cappelletti
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of evaluating the dielectric layer of nonvolatile EPROM, EEP...
- Patent number 5,604,699
- Issue date Feb 18, 1997
- SGS Thomson Microelectronics S.r.l.
- Paolo G. Cappelletti
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of evaluating the gate oxide of non-volatile EPROM, EEPROM a...
- Patent number 5,515,318
- Issue date May 7, 1996
- SGS Thomson Microelectronics S.r.l.
- Paolo Cappeletti
- G06 - COMPUTING CALCULATING COUNTING

Leonardo Ravazzi

Person

Patents Grantslast 30 patents

Flash EEPROM with integrated device for limiting the erase source v...

Method for localizing point defects causing leakage currents in a n...

Flow process for producing non-volatile memories with differentiate...

Method and apparatus for localizing point defects causing leakage c...

Method of making asymmetric nonvolatile memory cell

Method of evaluating the gate oxide of non-volatile EPROM, EEPROM a...

Nonvolatile memory cell and a method for forming the same

Method for evaluating the dielectric layer of nonvolatile EPROM, EE...

Method of evaluating the dielectric layer of nonvolatile EPROM, EEP...

Method of evaluating the gate oxide of non-volatile EPROM, EEPROM a...