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Shanghai, CN
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last 30 patents
Information
Patent Grant
LDMOS device and manufacturing method thereof
Patent number
11,121,252
Issue date
Sep 14, 2021
Semiconductor Manufacturing (Beijing) Intel Corporation
Deyan Chen
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Buried-channel MOSFET and a surface-channel MOSFET of a same type a...
Patent number
10,062,704
Issue date
Aug 28, 2018
Semiconductor Manufacturing International (Beijing) Corporation
Tzu Yin Chiu
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
LDMOS DEVICE AND MANUFACTURING METHOD THEREOF
Publication number
20210376145
Publication date
Dec 2, 2021
Semiconductor Manufacturing International (Beijing) Corporation
Deyan Chen
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
LDMOS DEVICE AND MANUFACTURING METHOD THEREOF
Publication number
20200273989
Publication date
Aug 27, 2020
Semiconductor Manufacturing International (Beijing) Corporation
Deyan Chen
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
BURIED-CHANNEL MOSFET AND A SURFACE-CHANNEL MOSFET OF A SAME TYPE A...
Publication number
20170194339
Publication date
Jul 6, 2017
Semiconductor Manufacturing International (Beijing) Corporation
Tzu Yin CHIU
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method for Forming a Shallow Trench Isolation Structure
Publication number
20080081433
Publication date
Apr 3, 2008
Semiconductor Manufacturing International (Shanghai) Corporation
Leong Tce Koh
H01 - BASIC ELECTRIC ELEMENTS