Li Li

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for reoxidizing an oxide and for fabricating semiconductor...
- Patent number 8,790,982
- Issue date Jul 29, 2014
- Micron Technology, Inc.
- Li Li
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods of implanting dopant ions
- Patent number 8,709,927
- Issue date Apr 29, 2014
- Micron Technology, Inc.
- Shu Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for removing dielectric materials
- Patent number 8,703,005
- Issue date Apr 22, 2014
- Micron Technology, Inc.
- Li Li
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Low temperature process for polysilazane oxidation/densification
- Patent number 8,575,040
- Issue date Nov 5, 2013
- Micron Technology, Inc.
- Janos Fucsko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures including an at least partially reoxidized oxide material
- Patent number 8,492,851
- Issue date Jul 23, 2013
- Micron Technology, Inc.
- Li Li
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Sputtering-less ultra-low energy ion implantation
- Patent number 8,324,088
- Issue date Dec 4, 2012
- Micron Technology, Inc.
- Shu Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for removing dielectric materials
- Patent number 8,221,642
- Issue date Jul 17, 2012
- Micron Technology, Inc.
- Li Li
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Material removal methods employing solutions with reversible ETCH s...
- Patent number 8,187,487
- Issue date May 29, 2012
- Micron Technology, Inc.
- Li Li
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Methods for filling trenches in a semiconductor material
- Patent number 8,153,502
- Issue date Apr 10, 2012
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling striations and CD loss in contact oxide etch
- Patent number 8,093,155
- Issue date Jan 10, 2012
- Micron Technology, Inc.
- Li Li
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Sputtering-less ultra-low energy ion implantation
- Patent number 7,935,618
- Issue date May 3, 2011
- Micron Technology, Inc.
- Shu Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming trench isolation and methods of forming arrays o...
- Patent number 7,883,986
- Issue date Feb 8, 2011
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etchants for selectively removing dielectric materials
- Patent number 7,718,084
- Issue date May 18, 2010
- Micron Technology, Inc.
- Li Li
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Methods for fabricating residue-free contact openings
- Patent number 7,700,497
- Issue date Apr 20, 2010
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming trench isolation and methods of forming arrays o...
- Patent number 7,682,977
- Issue date Mar 23, 2010
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etchants and etchant systems with plural etch selectivities
- Patent number 7,591,959
- Issue date Sep 22, 2009
- Micron Technology, Inc.
- Li Li
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Semiconductor assemblies including redistribution layers and packag...
- Patent number 7,589,426
- Issue date Sep 15, 2009
- Micron Technology, Inc.
- Tongbi Jiang
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Low temperature process for polysilazane oxidation/densification
- Patent number 7,557,420
- Issue date Jul 7, 2009
- Micron Technology, Inc.
- Janos Fucsko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Filled trench isolation structure
- Patent number 7,550,816
- Issue date Jun 23, 2009
- Micron Technology, Inc.
- Li Li
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for forming openings in doped silicon dioxide
- Patent number 7,541,270
- Issue date Jun 2, 2009
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature process for polysilazane oxidation/densification
- Patent number 7,521,378
- Issue date Apr 21, 2009
- Micron Technology, Inc.
- Janos Fucsko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating residue-free contact openings
- Patent number 7,470,631
- Issue date Dec 30, 2008
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of plasma etching a substrate
- Patent number 7,470,625
- Issue date Dec 30, 2008
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming and using memory cell structures
- Patent number 7,410,863
- Issue date Aug 12, 2008
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion-assisted oxidation methods and the resulting structures
- Patent number 7,371,697
- Issue date May 13, 2008
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having contact pad with a conductive layer and a conductive...
- Patent number 7,358,185
- Issue date Apr 15, 2008
- Micron Technology, Inc.
- Tongbi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etchant with selectivity for doped silicon dioxide over undoped sil...
- Patent number 7,319,075
- Issue date Jan 15, 2008
- Micron Technology, Inc.
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical treatment of semiconductor substrates
- Patent number 7,314,837
- Issue date Jan 1, 2008
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma reaction chamber liner consisting essentially of osmium
- Patent number 7,293,526
- Issue date Nov 13, 2007
- Micron Technology, Inc.
- Max F. Hineman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming trench isolation in the fabrication of integrate...
- Patent number 7,273,796
- Issue date Sep 25, 2007
- Micron Technology, Inc.
- John Smythe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR REOXIDIZING AN OXIDE AND FOR FABRICATING SEMICONDUCTOR...
- Publication number 20130309855
- Publication date Nov 21, 2013
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF IMPLANTING DOPANT IONS
- Publication number 20130012007
- Publication date Jan 10, 2013
- Micron Technology, Inc.
- Shu Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR REMOVING DIELECTRIC MATERIALS
- Publication number 20120282781
- Publication date Nov 8, 2012
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sputtering-Less Ultra-Low Energy Ion Implantation
- Publication number 20110212608
- Publication date Sep 1, 2011
- Shu Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR REMOVING DIELECTRIC MATERIALS
- Publication number 20100190351
- Publication date Jul 29, 2010
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Trench Isolation and Methods of Forming Arrays o...
- Publication number 20100035404
- Publication date Feb 11, 2010
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MATERIAL REMOVAL METHODS EMPLOYING SOLUTIONS WITH REVERSIBLE ETCH S...
- Publication number 20100022096
- Publication date Jan 28, 2010
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Temperature Process for Polysilazane Oxidation/Densification
- Publication number 20090269569
- Publication date Oct 29, 2009
- Janos Fucsko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING RESIDUE-FREE CONTACT OPENINGS
- Publication number 20090104767
- Publication date Apr 23, 2009
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CONTROLLING STRIATIONS AND CD LOSS IN CONTACT OXIDE ETCH
- Publication number 20090081877
- Publication date Mar 26, 2009
- Li Li
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Sputtering-Less Ultra-Low Energy Ion Implantation
- Publication number 20090081858
- Publication date Mar 26, 2009
- Shu Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION-ASSISTED OXIDATION METHODS AND THE RESULTING STRUCTURES
- Publication number 20080203542
- Publication date Aug 28, 2008
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING CONTACT PAD WITH A CONDUCTIVE LAYER AND A CONDUCTIVE...
- Publication number 20080142983
- Publication date Jun 19, 2008
- Tongbi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for filling trenches in a semiconductor material
- Publication number 20070269958
- Publication date Nov 22, 2007
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming trench isolation and methods of forming arrays o...
- Publication number 20070264794
- Publication date Nov 15, 2007
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma reaction chamber assemblies
- Publication number 20070113975
- Publication date May 24, 2007
- Max F. Hineman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ion-assisted oxidation methods and the resulting structures
- Publication number 20070059943
- Publication date Mar 15, 2007
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming and using memory cell structures
- Publication number 20070035041
- Publication date Feb 15, 2007
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor assemblies including redistribution layers and packag...
- Publication number 20070001293
- Publication date Jan 4, 2007
- Tongbi Jiang
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
Method of plasma etching a substrate
- Publication number 20060252198
- Publication date Nov 9, 2006
- Li Li
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Formation of micro lens by using flowable oxide deposition
- Publication number 20060214203
- Publication date Sep 28, 2006
- Jin Li
- G02 - OPTICS
Information Patent Application
Methods of forming trench isolation in the fabrication of integrate...
- Publication number 20060216906
- Publication date Sep 28, 2006
- Micron Technology, Inc.
- John Smythe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of micro lens by using flowable oxide deposition
- Publication number 20060198008
- Publication date Sep 7, 2006
- Micron Technology, Inc.
- Jin Li
- G02 - OPTICS
Information Patent Application
Chemical treatment of semiconductor substrates
- Publication number 20060128164
- Publication date Jun 15, 2006
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low temperature process for polysilazane oxidation/densification
- Publication number 20060102977
- Publication date May 18, 2006
- Micron Technology, Inc.
- Janos Fucsko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etchants and etchant systems with plural etch selectivities
- Publication number 20060102592
- Publication date May 18, 2006
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for fabrication of thin semiconductor assemblies including...
- Publication number 20060046350
- Publication date Mar 2, 2006
- Tongbi Jiang
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
Semiconductor fabrication methods and apparatus
- Publication number 20060040506
- Publication date Feb 23, 2006
- Micron Technology, Inc.
- Terry L. Gilton
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Device having contact pad with a conductive layer and a conductive...
- Publication number 20060017163
- Publication date Jan 26, 2006
- Tongbi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming trench isolation within a semiconductor substrate
- Publication number 20060009004
- Publication date Jan 12, 2006
- Janos Fucsko
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...

Person

Patents Grantslast 30 patents

Methods for reoxidizing an oxide and for fabricating semiconductor...

Methods of implanting dopant ions

Methods for removing dielectric materials

Low temperature process for polysilazane oxidation/densification

Structures including an at least partially reoxidized oxide material

Sputtering-less ultra-low energy ion implantation

Methods for removing dielectric materials

Material removal methods employing solutions with reversible ETCH s...

Methods for filling trenches in a semiconductor material

Method of controlling striations and CD loss in contact oxide etch

Sputtering-less ultra-low energy ion implantation

Methods of forming trench isolation and methods of forming arrays o...

Etchants for selectively removing dielectric materials

Methods for fabricating residue-free contact openings

Methods of forming trench isolation and methods of forming arrays o...

Etchants and etchant systems with plural etch selectivities

Semiconductor assemblies including redistribution layers and packag...

Low temperature process for polysilazane oxidation/densification

Filled trench isolation structure

Methods for forming openings in doped silicon dioxide

Low temperature process for polysilazane oxidation/densification

Methods for fabricating residue-free contact openings

Method of plasma etching a substrate

Methods of forming and using memory cell structures

Ion-assisted oxidation methods and the resulting structures

Device having contact pad with a conductive layer and a conductive...

Etchant with selectivity for doped silicon dioxide over undoped sil...

Chemical treatment of semiconductor substrates

Plasma reaction chamber liner consisting essentially of osmium

Methods of forming trench isolation in the fabrication of integrate...

Patents Applicationslast 30 patents

METHODS FOR REOXIDIZING AN OXIDE AND FOR FABRICATING SEMICONDUCTOR...

METHODS OF IMPLANTING DOPANT IONS

METHODS FOR REMOVING DIELECTRIC MATERIALS

Sputtering-Less Ultra-Low Energy Ion Implantation

METHODS FOR REMOVING DIELECTRIC MATERIALS

Methods of Forming Trench Isolation and Methods of Forming Arrays o...

MATERIAL REMOVAL METHODS EMPLOYING SOLUTIONS WITH REVERSIBLE ETCH S...

Low Temperature Process for Polysilazane Oxidation/Densification

METHODS FOR FABRICATING RESIDUE-FREE CONTACT OPENINGS

METHOD OF CONTROLLING STRIATIONS AND CD LOSS IN CONTACT OXIDE ETCH

Sputtering-Less Ultra-Low Energy Ion Implantation

ION-ASSISTED OXIDATION METHODS AND THE RESULTING STRUCTURES

DEVICE HAVING CONTACT PAD WITH A CONDUCTIVE LAYER AND A CONDUCTIVE...

Methods for filling trenches in a semiconductor material

Methods of forming trench isolation and methods of forming arrays o...

Plasma reaction chamber assemblies

Ion-assisted oxidation methods and the resulting structures

Methods of forming and using memory cell structures

Semiconductor assemblies including redistribution layers and packag...

Method of plasma etching a substrate

Formation of micro lens by using flowable oxide deposition

Methods of forming trench isolation in the fabrication of integrate...

Formation of micro lens by using flowable oxide deposition

Chemical treatment of semiconductor substrates

Low temperature process for polysilazane oxidation/densification

Etchants and etchant systems with plural etch selectivities

Methods for fabrication of thin semiconductor assemblies including...

Semiconductor fabrication methods and apparatus

Device having contact pad with a conductive layer and a conductive...

Method of forming trench isolation within a semiconductor substrate