Li-Te CHANG

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Adaptive error avoidance in the memory devices
- Patent number 12,073,905
- Issue date Aug 27, 2024
- Micron Technology, Inc.
- Li-Te Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Read disturb management
- Patent number 12,051,471
- Issue date Jul 30, 2024
- Micron Technology, Inc.
- Zhenming Zhou
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive scanning of memory devices with supervised learning
- Patent number 12,050,777
- Issue date Jul 30, 2024
- Micron Technology, Inc.
- Li-Te Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Error avoidance for partially programmed blocks of a memory device
- Patent number 12,013,792
- Issue date Jun 18, 2024
- Micron Technology, Inc.
- Li-Te Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Refresh of neighboring memory cells based on read status
- Patent number 12,009,027
- Issue date Jun 11, 2024
- Micron Technology, Inc.
- Li-Te Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Performing refresh operations of a memory device according to a dyn...
- Patent number 11,721,381
- Issue date Aug 8, 2023
- Micron Technology, Inc.
- Li-Te Chang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
READ DISTURB MANAGEMENT
- Publication number 20240386972
- Publication date Nov 21, 2024
- Micron Technology, Inc.
- Zhenming Zhou
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE ERROR AVOIDANCE IN THE MEMORY DEVICES
- Publication number 20240363190
- Publication date Oct 31, 2024
- Micron Technology, Inc.
- Li-Te Chang
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE SCANNING OF MEMORY DEVICES WITH SUPERVISED LEARNING
- Publication number 20240329852
- Publication date Oct 3, 2024
- Micron Technology, Inc.
- Li-Te Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MODIFICATION OF PROGRAM VOLTAGE LEVEL WITH READ OR PROGRAM-VERIFY A...
- Publication number 20240319886
- Publication date Sep 26, 2024
- Micron Technology, Inc.
- Peng Zhang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
REFRESH OF NEIGHBORING MEMORY CELLS BASED ON READ STATUS
- Publication number 20240321350
- Publication date Sep 26, 2024
- Micron Technology, Inc.
- Li-Te Chang
- G11 - INFORMATION STORAGE
Information Patent Application
ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE
- Publication number 20240311311
- Publication date Sep 19, 2024
- Li-Te Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DYNAMIC READ CALIBRATION
- Publication number 20240177795
- Publication date May 30, 2024
- Micron Technology, Inc.
- Li-Te Chang
- G11 - INFORMATION STORAGE
Information Patent Application
POWER LOSS ERROR DETECTION USING PARTIAL BLOCK HANDLING
- Publication number 20240170090
- Publication date May 23, 2024
- Micron Technology, Inc.
- Peng ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE ERROR AVOIDANCE IN THE MEMORY DEVICES
- Publication number 20240071553
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Li-Te Chang
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE INTEGRITY SCAN IN A MEMORY SUB-SYSTEM
- Publication number 20240062834
- Publication date Feb 22, 2024
- Micron Technology, Inc.
- Li-Te Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ADAPTIVE SCANNING OF MEMORY DEVICES WITH SUPERVISED LEARNING
- Publication number 20240045595
- Publication date Feb 8, 2024
- Micron Technology, Inc.
- Li-Te Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
READ DISTURB MANAGEMENT
- Publication number 20240029802
- Publication date Jan 25, 2024
- Micron Technology, Inc.
- Zhenming Zhou
- G11 - INFORMATION STORAGE
Information Patent Application
READ WINDOW MANAGEMENT IN A MEMORY SYSTEM
- Publication number 20240021264
- Publication date Jan 18, 2024
- Micron Technology, Inc.
- Li-Te Chang
- G11 - INFORMATION STORAGE
Information Patent Application
DYNAMIC READ LEVEL TRIM SELECTION FOR SCAN OPERATIONS OF MEMORY DEV...
- Publication number 20230393777
- Publication date Dec 7, 2023
- Micron Technology, Inc.
- Yu-Chung Lien
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE
- Publication number 20230393991
- Publication date Dec 7, 2023
- Li-Te Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Refresh of Neighboring Memory Cells Based on Read Status
- Publication number 20230207003
- Publication date Jun 29, 2023
- Micron Technology, Inc.
- Li-Te Chang
- G11 - INFORMATION STORAGE
Information Patent Application
PERFORMING REFRESH OPERATIONS OF A MEMORY DEVICE ACCORDING TO A DYN...
- Publication number 20230043091
- Publication date Feb 9, 2023
- Micron Technology, Inc.
- Li-Te CHANG
- G11 - INFORMATION STORAGE

Li-Te CHANG

Person

Patents Grantslast 30 patents

Adaptive error avoidance in the memory devices

Read disturb management

Adaptive scanning of memory devices with supervised learning

Error avoidance for partially programmed blocks of a memory device

Refresh of neighboring memory cells based on read status

Performing refresh operations of a memory device according to a dyn...

Patents Applicationslast 30 patents

READ DISTURB MANAGEMENT

ADAPTIVE ERROR AVOIDANCE IN THE MEMORY DEVICES

ADAPTIVE SCANNING OF MEMORY DEVICES WITH SUPERVISED LEARNING

MODIFICATION OF PROGRAM VOLTAGE LEVEL WITH READ OR PROGRAM-VERIFY A...

REFRESH OF NEIGHBORING MEMORY CELLS BASED ON READ STATUS

ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE

DYNAMIC READ CALIBRATION

POWER LOSS ERROR DETECTION USING PARTIAL BLOCK HANDLING

ADAPTIVE ERROR AVOIDANCE IN THE MEMORY DEVICES

ADAPTIVE INTEGRITY SCAN IN A MEMORY SUB-SYSTEM

ADAPTIVE SCANNING OF MEMORY DEVICES WITH SUPERVISED LEARNING

READ DISTURB MANAGEMENT

READ WINDOW MANAGEMENT IN A MEMORY SYSTEM

DYNAMIC READ LEVEL TRIM SELECTION FOR SCAN OPERATIONS OF MEMORY DEV...

ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE

Refresh of Neighboring Memory Cells Based on Read Status

PERFORMING REFRESH OPERATIONS OF A MEMORY DEVICE ACCORDING TO A DYN...